The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.     

Fast convergent integral equation solution of strip gratings on dielectric substrate

A fast convergent integral equation solution to the scattering problem of a transverse electric/transverse magnetic (TE/TM) plane wave by a one-dimensional periodic array of thin metal strips on a dielectric substrate is described. The formulation of the integral equation is similar to that derived by Montgomery for a two-dimensional periodic array of thin conductors on a dielectric substrate. However, the basis functions which satisfy the appropriate edge conditions are incorporated here for the unknown current expansion on the strips. Following the standard Galerkin's procedure, one may readily determine the induced currents on the strips and thus the reflected and transmitted fields. Sample numerical results are given and good agreement with previously published data is obtained. It is found that the convergence rate of this method is improved by an order of magnitude. Also it is shown that the dielectric substrate has a strong effect on the scattering from the large spacing strip grating.     

灾难备份系统在任丘市央行的应用

灾难备份的概念所谓“灾难备份”,是指利用技术、管理手段以及相关资源,确保已有的关键数据和关键业务在灾难发生后,在确定的时间内可以恢复和继续运营的过程。灾难备份建设是一项复杂的系统工程,涉及到灾难备份中心选点、灾难备份中心建设,机房建设、基础设施建设等,同时还涉及到灾难备份系统建设、专业运营队伍建设、灾难备份中心运营管理体制建设和灾难备份中心运营管理等工作。因此,建立灾难备份不仅需要投入大量人力、物力和财力,还需要考虑灾难备份系统实施所面临的技术难度和经验不足所带来的风险,以及长期运营管理方面的资金投入。…     

高压变频器在高炉冲渣水泵上的应用

介绍了HARSVERT—A06／035型高压变频器的性能及其在新4号高炉冲渣水泵上的应用。     

An ideal topology type convergent theorem on scale effect algebras

The famous Antosik-Mikusinski convergent theorem on the Abel topological groups has very extensive applications in measure theory, summation theory and other analysis fields. In this paper, we establish the theorem on a class of effect algebras equipped with the ideal topology. This paper shows also that the ideal topology of effect algebras is a useful topology in studying the quantum logic the- ory.     

火焰原子吸收法测定高铋物料中的铅

本文介绍了在以高铋物料为基体 ,5 %的HNO3 介质中 ,波长 2 17nm处进行火焰原子吸收法测定铅的试验 ,采用标准加入法进行回收率的试验 ,回收率大于 98% ,特征浓度为 0 .0 7μg/ml,结果令人满意 ,能满足炉前样分析的要求     

氧化铝厂渣浆泵机械密封的失效形式及改进措施

本文介绍了渣浆泵机械密封的失效形式,并根据长期现场工作经验,分析了机械密封泄漏的主要原因,据此提出了改进措施,通过对动静环密封面倒角,改变密封面尺寸及载荷系数后有效地解决了由于径向跳动过大而引起的密封面刮碰擦裂的失效问题。     

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing

In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500degC . Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515degC , which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.