承钢棒材连轧线计算机控制系统

主要介绍了承钢棒材连轧线计算机控制系统，其中包括了系统的硬件配置，控制功能及控制说明。     

4，4’－硫代双［2－（1，1－二甲基乙基）－5－甲基苯酚］的合成及鉴定

报道了４，４′－硫代双［２－（１，１－二甲基乙基）－５一甲基苯酚］的合成方法及结构鉴定。     

A unified approach for the analysis of grating-assisted couplers

Two coupled-mode theories based on individual waveguide modes and compound system modes, respectively, are briefly reviewed with proper modification and new comments. The relation between these two theories is built and it is found that one theory is actually an efficient approximation of the other. Also, the reason why the results obtained with the first more accurate than those obtained with the second is found. The constraint on both approaches is shown     

新取代苯基荧光酮试剂的合成及其性质的研究Ⅱ．新型取代苯基荧光酮与金属离子显色反应的研究

研究了３，５－二溴－４－氨基苯基荧光酮、３，５－二溴－４－偶氮变色酸等８种苯基荧光酮在酸性介质中与高价金属离子Ｚｒ（Ⅳ）、Ｍｏ（Ⅵ）、Ｗ（Ⅵ）、Ａｌ（Ⅲ）、Ｇａ（Ⅲ）等的显色反应。３，５－位二溴取代的试剂的灵敏度高于未取代的灵敏度，摩尔吸光系数绝大多数在１０５Ｌ·ｍｏｌ－１·ｃｍ－１以上。     

β－C_2S固溶体稳定的热力学研究

从热力学理论出发，利用Ｘ射线衍射定性和定量的方法，对β－Ｃ＿２Ｓ固溶体的稳定性进行了分析和研究。经热力学理论推导得出β－Ｃ＿２Ｓ稳定的热力学条件，即掺入的微量元素的化学位μ＿ｉ须小于β－Ｃ＿２Ｓ的反应自由焓△Ｇ＿β，μ＿ｉ＜△Ｇ＿β．并定量地计算出一种微量元素稳定β－Ｃ＿２Ｓ的临界掺加量为；多种微量元素对β－Ｃ＿２Ｓ的稳定性判断条件为：     

Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSMphotodetector

The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.