预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

耿达电站首部枢纽运行中的泥沙淤积及清污处理

简要地介绍了渔子溪二级水电站首部枢纽在10多年运行管理中的泥沙淤积及清污的处理措施。     

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.     

U(Ⅳ)-U(Ⅵ)同位素交换反应动力学研究 Ⅰ.Fe~(2+)对U(Ⅳ)-U(Ⅵ)同位素交换反应的催化作用

一、前言由于U(IV)-U(VI)同位素交换体系具有相当大的同位素效应和很好的稳定性,并且容易实现两相回流,这对于分离U同位素的工业应用都是十分有利的。但是,U(IV)-U(VI)同位素交换反应速度非常慢,常温下H~+浓度为1.0—4.0 mol/l时,速度常数为1.0×10~(-4)l~2/mol·s。因此要用U(IV)-U(VI)交换体系浓缩铀同位素,必须研究U(IV)-U(VI)交换反应动力学,找到加快交换反应的方法。     

溶剂萃取分离锂同位素研究Ⅱ.苏丹Ⅰ-中性配位体协萃体系萃取分离锂同位素效应探讨

文章讨论了苏丹I-中性配位体协萃体系萃取分离锂同位素中螯合剂和协萃剂的结构效应。为了获得高的同位素分离效应,螯合剂必须是弱酸性的(PK_α>11),具有强的分子内氢键及易于形成六元螯合环。协萃剂结构不仅要求无空间位阻,而且具有强的配位基。α随配位基的碱性增大而相应提高。萃取络合物中螯合环的增多亦有利于体系α的提高。此外本文还讨论了一些萃取体系的同位素富集方向和萃锂体系用于分离同位素的前景。     

石油系油浆与煤系闪蒸油的焦化性能——I．热解条件的影响

通过偏光显微镜观察了石油系油浆（LH）与煤系闪蒸油（SN）焦化后所得焦块的光学结构。结果表明，在较宽条件下两种原料单独焦化均得不到取向度高的流线型结构。将两种原料以一定比例混合后先热解丙焦化所得焦块的光学结构明显好于二者混合后直接焦化所得焦块的光学结构，其中LH和SN以3：2的重量比混合后在440℃、1MPa下热解3．5h然后再在530℃、1MPa下焦化8h所得焦块为具有较高取向度的流线型结构，适合于作为针状焦的起始原料。     

硫脲型整合树脂在分析上的应用 Ⅰ.岩样中微量银的中子活化分析

前言银和其他贵金属元素一样,在地壳中比较稀少,按其自然丰度为第67号元素,平均含量仅0.07 ppm。由于地质样品成分非常复杂,为测定其微量银,必须进行严格的化学分离。但是迄今文献中报道的许多分离分法,步骤都相当冗长,一般采用氯化银反     

内嵌闪存MCU的高性能多通道24位采集系统ADuC845

ADuC845是ADI公司新推出的嵌有单指令周期8052闪存MCU、带两路24位∑ -△A/D、双12位D/A以及两个灵活脉宽调制输出的高性能24位数据采集与处理系统芯片。该芯片的数据处理速度达12MIPS,且设计简单 ,噪声低 ,非常适用于精密仪器仪表。文中详细介绍了该芯片的功能特点和工作原理 ,给出了该芯片的应用方法。