全文获取类型
收费全文 | 205738篇 |
免费 | 15371篇 |
国内免费 | 7808篇 |
专业分类
电工技术 | 11244篇 |
技术理论 | 14篇 |
综合类 | 11214篇 |
化学工业 | 35696篇 |
金属工艺 | 10538篇 |
机械仪表 | 11997篇 |
建筑科学 | 16409篇 |
矿业工程 | 4942篇 |
能源动力 | 5849篇 |
轻工业 | 12681篇 |
水利工程 | 3211篇 |
石油天然气 | 11072篇 |
武器工业 | 1345篇 |
无线电 | 25487篇 |
一般工业技术 | 26719篇 |
冶金工业 | 10934篇 |
原子能技术 | 2114篇 |
自动化技术 | 27451篇 |
出版年
2024年 | 881篇 |
2023年 | 3262篇 |
2022年 | 5827篇 |
2021年 | 7927篇 |
2020年 | 5796篇 |
2019年 | 5017篇 |
2018年 | 5414篇 |
2017年 | 6200篇 |
2016年 | 5692篇 |
2015年 | 7290篇 |
2014年 | 9519篇 |
2013年 | 12269篇 |
2012年 | 12225篇 |
2011年 | 13871篇 |
2010年 | 11610篇 |
2009年 | 11460篇 |
2008年 | 10872篇 |
2007年 | 10467篇 |
2006年 | 10857篇 |
2005年 | 9632篇 |
2004年 | 6563篇 |
2003年 | 5776篇 |
2002年 | 5251篇 |
2001年 | 4723篇 |
2000年 | 4868篇 |
1999年 | 5637篇 |
1998年 | 5283篇 |
1997年 | 4351篇 |
1996年 | 3956篇 |
1995年 | 3310篇 |
1994年 | 2768篇 |
1993年 | 2187篇 |
1992年 | 1700篇 |
1991年 | 1277篇 |
1990年 | 1018篇 |
1989年 | 877篇 |
1988年 | 681篇 |
1987年 | 496篇 |
1986年 | 394篇 |
1985年 | 334篇 |
1984年 | 212篇 |
1983年 | 198篇 |
1982年 | 163篇 |
1981年 | 145篇 |
1980年 | 131篇 |
1979年 | 97篇 |
1978年 | 63篇 |
1977年 | 63篇 |
1976年 | 77篇 |
1975年 | 38篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
82.
InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing 相似文献
83.
Ming-Jer Chen Kum-Chang Chao Tzuen-Hsi Huang Jyh-Min Tsaur 《Electron Device Letters, IEEE》1992,13(12):654-657
The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10-3 to 5×10-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n + inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n+ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage 相似文献
84.
85.
Bor -Yir Chen Wei -Hsiung Wu Jiann -Ruey Chen Chum -Sam Hong 《Journal of Materials Science》1995,30(9):2254-2256
The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative. 相似文献
86.
F.S. Lien Chao-Kuang Chen Yih-Min Chang 《International Communications in Heat and Mass Transfer》1985,12(2):127-137
The effects of free convection and mass transfer are taken into account for the Stokes' problem of the flow near an impulsively moving infinite vertical circular cylinder. Expressions of the velocity, temperature, concentration and skin friction of the fluid in closed form are obtained by the Laplace transform technique. The results based on various values of the parameters Gr (Grashof number), Gm (modified Grashof number), Sc (Schmidt number) and Pr (Prandtl number) are given in graphical form. It will be seen that there is a rise in the velocity due to the presence of a foreign mass. But higher Sc yields the lower velocity and skin friction. As the radius of the circular cylinder approaches to infinite, the results presented in this paper agree with those of V.M. Soundalgekar's and C.K. Chen's etc. for the flow past an impulsively moving infinite vertical plate. 相似文献
87.
Hwang H.-K. Lee L.-S. Chen S.-H. 《Selected Areas in Communications, IEEE Journal on》1989,7(9):1450-1461
Multi-H phase-coded modulation (MHPM) is a bandwidth-efficient modulation scheme which offers substantial coding gain over conventional digital modulation schemes. MHPM with asymmetric modulation indices corresponding to the bipolar data +1 and -1 is considered, and numerical results for the minimum Euclidean distances are provided. It is shown that performance improvements on the error probability over conventional MHPM are gained with essentially the same bandwidth and a very slight modification in implementation. The upper bounds on the error probabilities as functions of observation intervals and received E b/N 0 are also investigated in detail. It is concluded that the concept of asymmetric modulation indices for MHPM is attractive for bandwidth and power-efficient modulation 相似文献
88.
我们于1985年对我院1984年开展肝单光子发射计算机断层以来的52例肝病人进行了分析总结。结果表明,肝单光子发射断层在诊断肝内占位性病变方面比普通肝静态γ照相有许多优点。需要指出的是,肝单光予发射断层的若干优点及诊断的准确性是与物理条件的正确选择和应用密切相关的。本文根据至今积累的近100例断层经验,从技术方面介绍了影响单 相似文献
89.
In this paper, according to the theory of thin shells, the uniformly valid asymptotic homogeneous solution and the exact particular solution are derived for spherical thin shell segments with a circular hole under transverse load and moment . 相似文献
90.