Methods for Estimating Theoretically the Influence of Ion Scattering and Reflection on the Isotopic Sensitivity of Static Magnetic Mass-Spectrometers

For purposes of optimizing ion-optical systems, analyzer construction, and pump placement in static magnetic mass-spectrometers for isotopic analysis of uranium compounds, a comparative analysis is made and a review is given of methods described in the literature for theoretical estimates of the influence of scattering and reflection of ions on the isotopic sensitivity. Conclusions which make it possible to solve the problem are drawn.     

Modeling phosphorus in the upper Etowah River basin: identifying sources under uncertainty.

The Uniform Covering by Probabilistic Rejection (UCPR) algorithm was used, in conjunction with the Soil and Water Assessment Tool (SWAT) model, to identify P loads from point source and nonpoint source polluters in the upper Etowah River basin (UERB) in Georgia. The key findings of the research are as follows. The mean absolute error was preferred over the root mean square error as a search criterion for the UCPR algorithm when water quality observations are scarce. The undocumented P load from point sources in the UERB was consistently estimated as about 43 kg/d by the proposed method; but the method was not able to identify the broiler litter application rate to the poultry/beef operation pastures. Point sources (both documented and undocumented), poultry/beef operation pastures, and forests are the three major contributors of P. During 1992-1996, on average they accounted for 36.4, 31.7, and 17.2% of P load from the UERB, respectively.     

吸入短寿命氡子体动物肺组织剂量与体重关系的探讨

本文介绍吸入短寿命氡子体的不同种动物肺组织吸收剂量与体重的关系。实验结果表明,吸收剂量随体重的增加而减小。     

Nucleation of copper on an assembly of carbon microelectrodes

The initial stage of copper electrodeposition on the electrochemically activated assembly of carbon microelectrodes from an acid solution of copper sulfate was investigated using cyclic voltammetry, potentiostatic pulse technique and electrochemical impedance spectroscopy. Analysis of the experimental current transients has been carried out using a non-linear fitting procedure according to the model that takes into account spherical diffusion towards a disc-shaped microelectrode. The higher values of diffusion coefficient in comparison with those observed on planar electrodes were explained with an increased diffusion caused by the electrode geometry. Impedance spectra showed two time constants, the high-frequency related to the charge transfer process and the low-frequency corresponded to the deposit morphology.     

Calcium Phosphate Biomaterials: An Update

1Introduction Archaeologicalfindingsdatingbacktothe4thcentury BCshowedthatmissinghumanteethhavebeenreplaced bymaterialswhichincluded:animalteeth,coral,shells,ivory(elephanttusk),wood,andmetals[1].Inmodern times,autografts(boneobtainedfromanothersiteinthe …     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Long-wavelength infrared photoinduced switching of a resonanttunneling diode using the intersubband transition

Voltage switching induced by long-wavelength infrared light from a CO₂ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed