用于电弧检测的电力专用SoC设计

针对传统的电弧电路故障检测结果不准确的问题,设计用于电弧检测的SoC系统,并且在55nm工艺下进行流片验证。采用包含两种结构的模数转换器的片上电压源,设计了锁相环以及复位电路,精度最高可达8.67 bit。验证结果表明,本设计可提高电弧检测的准确性。     

Technological Aspects of Synthesizing Ceramic Coatings by Flow-Through Micro-Arc Oxidation

Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized...     

Influence of Titanium Excess in a Ti–Si Reaction Mixture on the Synthesis of a Composite in a Combustion Wave

Theoretical Foundations of Chemical Engineering - On the basis of the classic concepts of the theory of solid-phase combustion, for the first time, a model with a detailed scheme of chemical...     

Facial-sketch Synthesis: A New Challenge

Machine Intelligence Research - This paper aims to conduct a comprehensive study on facial-sketch synthesis (FSS). However, due to the high cost of obtaining hand-drawn sketch datasets, there is a...     

Effective prediction and resource allocation method (EPRAM) in fog computing environment for smart healthcare system

Multimedia Tools and Applications - Recently, many concepts in technology has been changed. According to the digital transformation trends, Internet of Things (IoT) represents an interested...     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Modeling of Ignition and Combustion of a Coflowing Hydrogen Jet in a Supersonic Air Flow

Combustion, Explosion, and Shock Waves - Results of a numerical study of mixing, ignition, and combustion of a cold hydrogen jet propagating along the lower wall of a channel parallel to a...     

Low light enhancement algorithm for color images using intuitionistic fuzzy sets with histogram equalization

Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an...     

Automated segmentation of brain tumor based on improved U-Net with residual units

Multimedia Tools and Applications - The study presents a new approach to automate segmentation of clinically significant brain tumor and, to a certain extent, addresses two major issues associated...