Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Self-healing,elastic and deformable novel composite phase change polymer based on thermoplastic elastomer SEBS for wearable devices

Journal of Materials Science - Form-stable composite phase change materials (C-PCMs) prepared by microencapsulation method and porous matrix adsorption method need for compression molding after...     

Theoretical estimation of dielectric loss of oxide glasses using nonequilibrium molecular dynamics simulations

To theoretically explore amorphous materials with a sufficiently low dielectric loss, which are essential for next-generation communication devices, the applicability of a nonequilibrium molecular dynamics simulation employing an external alternating electric field was examined using alkaline silicate glass models. In this method, the dielectric loss is directly evaluated as the phase shift of the dipole moment from the applied electric field. This method enabled us to evaluate the dielectric loss in a wide frequency range from 1 GHz to 10 THz. It was observed that the dielectric loss reaches its maximum at a few THz. The simulation method was found to qualitatively reproduce the effects of alkaline content and alkaline type on the dielectric loss. Furthermore, it reasonably reproduced the effect of mixed alkalines on the dielectric loss, which was observed in our experiments on sodium and/or potassium silicate glasses. Alkaline mixing was thus found to reduce the dielectric loss.     

印刷电路板缺陷检测的实际应用

电路板在我们的日常生活中非常常见,这就使得印刷电路板的缺陷检测显得尤为重要。AOI作为新兴的检测PCB板缺陷的系统,在生产实际中正在被大家熟知并且应用。相较于传统的检测方式,AOI系统比较灵活,无论是在检测时间还是系统运算上,或者是对相关技术人员的要求相较于传统方式都比较有优势,本文就AOI系统在实际中的应用展开讨论,分析并且介绍了在实际应用中的具体细则。     

Study on Runoff Control Effect of Different Drainage Schemes in Sponge Airport

Water Resources Management - The low impact development (LID) concept aims to control storm runoff and pollution through decentralized, small-scale source control to bring the development area as...     

A Novel LRRK2 Variant p.G2294R in the WD40 Domain Identified in Familial Parkinson’s Disease Affects LRRK2 Protein Levels

Leucine-rich repeat kinase 2 (LRRK2) is a major causative gene of late-onset familial Parkinson’s disease (PD). The suppression of kinase activity is believed to confer neuroprotection, as most pathogenic variants of LRRK2 associated with PD exhibit increased kinase activity. We herein report a novel LRRK2 variant—p.G2294R—located in the WD40 domain, detected through targeted gene-panel screening in a patient with familial PD. The proband showed late-onset Parkinsonism with dysautonomia and a good response to levodopa, without cognitive decline or psychosis. Cultured cell experiments revealed that p.G2294R is highly destabilized at the protein level. The LRRK2 p.G2294R protein expression was upregulated in the patient’s peripheral blood lymphocytes. However, macrophages differentiated from the same peripheral blood showed decreased LRRK2 protein levels. Moreover, our experiment indicated reduced phagocytic activity in the pathogenic yeasts and α-synuclein fibrils. This PD case presents an example wherein the decrease in LRRK2 activity did not act in a neuroprotective manner. Further investigations are needed in order to elucidate the relationship between LRRK2 expression in the central nervous system and the pathogenesis caused by altered LRRK2 activity.     

OBE-CDIO理念下“集成电路版图分析与设计”课程教学改革与探索

针对目前集成电路版图分析与设计课程存在教学方法老化、教学模式形式化等问题,本文以OBE-CDIO教育理念为指导,对”集成电路版图分析与设计”课程的课程教学模式、课程设计、项目式教学方式和课程考核方式等方面的改革进行有益的探索与实践。将工程教学认证中对学生的专业毕业要求作为制定教学目标的依据,将BB网络平台、ISO9001等现代化教学资源和质量标准融入课堂教学,采用OBE-CDIO能力教学理念指导课程设计,实现教学环节与考核环节的科学化与多元化,通过引入课程思政激发学生学习热情,树立社会主义核心价值观,全面地培养学生的综合版图分析与设计能力和素养。