加强电站无功管理

加强电站无功管理，不但能改善供电质量，满足电网的要求，提高单位的经济效益，而且使设备的安全运行得到了保障。     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

石油沥青60℃动力粘度测定影响因素的探讨

粘度是表征沥青稠度的一个重要指标。通过论述石油沥青粘度测定法(真空毛细管法)中毛细管的选择、温度、真空度、取样量等对试验结果的影响及试验过程中的其它注意事项,表明了在测定石油沥青的60℃动力粘度时,必须严格按照试验方法的要求进行测定,以保证试验结果的准确性。     

有线网络行业垄断性的改变及竞争形势分析

有线网络行业既具有自然垄断性,又具有行政垄断性.但随技术进步和国家政策的调整,其自然垄断性被削弱,行政垄断也被打破.在位的有线网络企业面临着两个层面的竞争：一是基于不同视频传输方式的竞争,二是同为有线网络传输方式的竞争,而后者是直接的竞争.对有线网络行业的竞争进行了SWOT分析.最后讨论了竞争形势下在位的有线网络运营商的应对思路.     

规整填料和新型塔板设计参数选取的质疑及分析

笔者指出了目前规整填料和新型塔板设计计算中若干尚未完全解决的、有争议或值得进一步完善的设计参数。如:规整填料的每米理论板数、最小液体喷淋密度、最小气体空塔动能因子、新型塔板开孔率等,并提出了具体的设计方案供与同行切磋。     

Using buried capacitor in LTCC-MLC balun

A novel chip-type ceramic balun designed in the 2.4 GHz ISM band frequency is presented. A buried capacitor is included in the balun, so that the length of the coupled transmission lines can be reduced and can be designed very easily. A meander or spiral broadside coupled-line is adopted to realise the proposed LTCC multi-layer balun. The measured performances of phase and amplitude balance for this LTCC-MLC balun show a good match with computer simulation     

MIM隧道发光结的负阻现象

本文介绍了薄膜隧道发光结的基本结构、发光机理，阐述了其Ｉ－Ｖ特性中的负阻现象。简单介绍了ＭＩＭ结构负阻的几种解释，根据热像仪照片和低温测试结果分析，再结合Ｄｅａｒｍａｌｅｙ导电模型，我们提出了ＭＩＭ负阻的物理模型，理论与实验符合较好，最后分析了负阻现象的应用前景。     

合成己二腈反应技术研究——(Ⅴ)己二腈工业反应过程模拟与反应器改造

对己二腈工业反应器提出了两釜串联带回流的模型,通过模拟计算得出模型的级间返混系数 f=6的结论。该模型能较好地预测工业反应器中物料组分浓度变化和气、液两相的流动特性;指出了现工业反应器的鼓泡中和段体积偏小是造成己二酸浓度偏高的关键;提出了可以通过增加串连一个鼓泡预反应段的改造方案,能有效地降低己二酸的浓度,从7%降至4%左右,从而能较好地减缓腐蚀和结焦。