Parallel, self-organizing, hierarchical neural networks. II

For pt.I see IEEE Trans. Neural Networks, vol.1, p.167-78 (1990). Parallel, self-organizing, hierarchical neural networks (PSHNNs) involve a number of stages with error detection at the end of each stage, i.e., rejection of error-causing vectors, which are then fed into the next stage after a nonlinear transformation. The stages operate in parallel during testing. Statistical properties and the mechanisms of vector rejection of the PSHNN are discussed in comparison to the maximum likelihood method and the backpropagation network. The PSHNN is highly fault tolerant and robust against errors in the weight values due to the adjustment of the error detection bounds to compensate errors in the weight values. These properties are exploited to develop architectures for programmable implementations in which the programmable parts are reduced to on-off or bipolar switching operations for bulk computations and attenuators for pointwise operations     

A time-domain approach to transmission network equivalents viaProny analysis for electromagnetic transients analysis

This paper presents a method of obtaining transmission network equivalents from the network's response to a pulse excitation signal. The proposed method is based on modal decomposition representation for the large-scale interconnected system. In this framework we use Prony analysis to identify the network function of the system and to decompose the large system into a parallel combination of simple first-order systems. As a result the network function of the transmission network can be identified easily, and a Thevenin-type of discrete-time filter model can be generated. It can reproduce the driving-point impedance characteristic of the network. Furthermore, the proposed model can be implemented into the EMTP in a direct manner. The simulation results with the full system representation and the developed equivalent system showed a good agreement     

Strain analysis of moving objects using a Fourier transform grid method

There is no good method to measure the shape and the strain distributions of a structure changing with time. We have previously proposed the Fourier transform grid method (FTGM) to measure the three-dimensional shape and surface strain distributions of stationary objects by analysing the two-dimensional grating images recorded with two cameras. In the stereoscopic method, it is very important to determine the accurate geometric parameters of the camera system. In this paper, the positions and the directions of cameras are accurately determined using the FTGM applied to images of a reference object on which a two-dimensional grating is drawn. Applications for analysing shape and strain distributions of vibrating rubber plates and a moving human skin are shown.     

阳泉市煤矿采空区地质因素对公路的破坏

介绍了阳泉市煤矿采空区对公路建设所造成的危害，对其上覆岩层变形破坏的地质因素及其破坏机理作了分析，指出应该采取各种措施减少对公路的破坏。     

预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.