Methods for Estimating Theoretically the Influence of Ion Scattering and Reflection on the Isotopic Sensitivity of Static Magnetic Mass-Spectrometers

For purposes of optimizing ion-optical systems, analyzer construction, and pump placement in static magnetic mass-spectrometers for isotopic analysis of uranium compounds, a comparative analysis is made and a review is given of methods described in the literature for theoretical estimates of the influence of scattering and reflection of ions on the isotopic sensitivity. Conclusions which make it possible to solve the problem are drawn.     

Modeling phosphorus in the upper Etowah River basin: identifying sources under uncertainty.

The Uniform Covering by Probabilistic Rejection (UCPR) algorithm was used, in conjunction with the Soil and Water Assessment Tool (SWAT) model, to identify P loads from point source and nonpoint source polluters in the upper Etowah River basin (UERB) in Georgia. The key findings of the research are as follows. The mean absolute error was preferred over the root mean square error as a search criterion for the UCPR algorithm when water quality observations are scarce. The undocumented P load from point sources in the UERB was consistently estimated as about 43 kg/d by the proposed method; but the method was not able to identify the broiler litter application rate to the poultry/beef operation pastures. Point sources (both documented and undocumented), poultry/beef operation pastures, and forests are the three major contributors of P. During 1992-1996, on average they accounted for 36.4, 31.7, and 17.2% of P load from the UERB, respectively.     

A comparative study on the effect of VUV radiation in plasma SiOx-coated polyimide and polypropylene films

Wettability of polyimide (PI) and polypropylene (PP) films have been improved using SiO_x-like thin layers deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave distributed electron cyclotron resonance plasma reactor. The films wettability evolution behaviors were evaluated through the results of contact angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The plasma depositions of SiO_x thin layers in presence of VUV radiation induce a contact angle decrease to about 7° and 35° for PI and PP films, respectively. XPS data showed that such difference in wettability is attributed to the increase of hydrophilic group's proportion at the surface of coated PI films due to VUV irradiation. AFM images showed that the PI surface topography remains relatively smooth when coated in presence of VUV radiation. However, in the case of PP films, AFM images revealed the growth of irregular structure due to a substrate etching effect supported by VUV radiation. For polymers coated without VUV irradiation, the deconvolution of the C1s peaks showed a significant decrease of CO bonds for both PI and PP substrates.     

La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics

La doping effects on intergrowth Bi₂WO₆–Bi₃TiNbO₉ ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La³⁺ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La³⁺ content, the site of dopant ion varies, the grain growth of Bi₅TiNbWO₁₅ is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process.     

Nucleation of copper on an assembly of carbon microelectrodes

The initial stage of copper electrodeposition on the electrochemically activated assembly of carbon microelectrodes from an acid solution of copper sulfate was investigated using cyclic voltammetry, potentiostatic pulse technique and electrochemical impedance spectroscopy. Analysis of the experimental current transients has been carried out using a non-linear fitting procedure according to the model that takes into account spherical diffusion towards a disc-shaped microelectrode. The higher values of diffusion coefficient in comparison with those observed on planar electrodes were explained with an increased diffusion caused by the electrode geometry. Impedance spectra showed two time constants, the high-frequency related to the charge transfer process and the low-frequency corresponded to the deposit morphology.     

Calcium Phosphate Biomaterials: An Update

1Introduction Archaeologicalfindingsdatingbacktothe4thcentury BCshowedthatmissinghumanteethhavebeenreplaced bymaterialswhichincluded:animalteeth,coral,shells,ivory(elephanttusk),wood,andmetals[1].Inmodern times,autografts(boneobtainedfromanothersiteinthe …     

Effect of spinneret hole diameter on the spinning and properties of acetate fibre

Conclusions The effect of the number and diameter of spinneret holes on hole clogging and the properties of acetate yarns has been investigated under manufacturing conditions.On reducing spinneret hole diameter and increasing the number of holes, the strength and fatigue properties are raised, but the elongation of acetate yarn is reduced.Translated from Khimicheskie Volokna, No. 1, pp. 29–30, January–February, 1986.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.