高导电性原油电脱盐工艺研究

南阳原油中金属含量较高,掺有部分3次采油采出原油,加工时易造成电脱盐装置原油乳化,电导率高,脱盐难度较大。装置投产十几年来脱后含盐一直不合格,经过改造仍然超标,常压塔顶腐蚀严重。为此,对原油进行了电脱盐工艺条件及破乳剂研究,研制出了高效电脱盐设备和生物复合脱盐剂及降电流剂,采用平流弓形电极进行改造,解决了该原油的电脱盐问题,使脱后含盐达到3 mg/L。     

Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping

We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er³⁺ ion are shown and discussed.     

A comparative study of the gas sensing behavior of nanostructured nickel ferrite synthesized by hydrothermal and reverse micelle techniques

A comparative study of gas sensing behavior of nanocrystalline nickel ferrite synthesized by micro-emulsion and hydrothermal method to liquefied petroleum gas (LPG) is presented. Nanocrystalline nickel ferrite synthesized by hydrothermal method indicated higher electrical conductivity and gas sensitivity at low operating temperature compared to nanocrystalline nickel ferrite synthesized by reverse micelle technique. This difference in the gas sensing behavior can be attributed to the presence of more oxygen vacancies (i.e. non-stoichiometry) in the hydrothermally synthesized nickel ferrite. Incorporation of palladium had a catalytic effect and the operating temperature was significantly reduced in both the samples. The higher operating temperature of the reverse micelle nickel ferrite material makes the sensor response speed faster (∼10 s) compared to the hydrothermally synthesized material (∼1 min).     

Electrical conductivity and gas sensitivity of Zn-Sb-O thick films

The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb₂O₃:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature.     

Microstructural and compositional aspects of ZnO-based varistor ceramics prepared by direct mixing of the constituent phases and high-energy milling

ZnO-based varistor samples were prepared by the direct mixing of the constituent phases (DMCP) and sintering at 1100 °C for 2 h. The influence of the starting powder mixture's composition – the amounts of the pre-reacted varistor compounds and their composition – and its preparation, either with or without mechano-chemical activation (MCA), on the microstructure, phase composition and electrical characteristics of the varistor samples was studied. It showed that MCA improved the density and microstructural homogeneity of the varistor samples. MCA strongly affected the grain growth: it enhanced the nucleation of inversion boundaries (IBs) in the ZnO grains and the IBs-induced grain-growth mechanism resulted in uniform grain growth and hence a microstructure with smaller ZnO grains and a narrower grain size distribution. The final phase composition of the samples prepared by the DMCP method mainly depended on the presence of varistor dopants that can prevent the formation of the pyrochlore phase, especially Cr₂O₃, while MCA can affect it mostly by providing a homogeneous distribution of those dopants. The DMCP varistor samples prepared with MCA had much better current–voltage characteristics than the samples of the same composition prepared from unactivated powders.     

Preparation of multi-compositional gas sensing films by combinatorial solution deposition

Various compositions of gas sensing films were prepared by the combinatorial deposition of SnO₂, ZnO, and WO₃ sol solutions and their gas sensing behaviors were investigated. The film composition could be manipulated conveniently via the alternate dropping of different oxide sol solutions. From the correlation between film compositions and gas sensitivities, the selective detection of C₂H₅OH and CH₃COCH₃ in the presence of CO, C₃H₈, H₂, and NO₂ could be attained. In addition, the discrimination between C₂H₅OH and CH₃COCH₃, which is a challenging issue due to their similar chemical nature, becomes possible. This research demonstrates the precise design of the sensor-material composition for the selective gas detection via the combinatorial approach.     

Nucleation of copper on an assembly of carbon microelectrodes

The initial stage of copper electrodeposition on the electrochemically activated assembly of carbon microelectrodes from an acid solution of copper sulfate was investigated using cyclic voltammetry, potentiostatic pulse technique and electrochemical impedance spectroscopy. Analysis of the experimental current transients has been carried out using a non-linear fitting procedure according to the model that takes into account spherical diffusion towards a disc-shaped microelectrode. The higher values of diffusion coefficient in comparison with those observed on planar electrodes were explained with an increased diffusion caused by the electrode geometry. Impedance spectra showed two time constants, the high-frequency related to the charge transfer process and the low-frequency corresponded to the deposit morphology.     

南钢中板厂电气设备可靠性保障方法

本文介绍了南钢中板厂将系统工程最优化技术中的随机服务系统理论和可靠性设计方法引入到电气设备的维护和管理工作中，并结合现场实际情况摸索出一套电气设备可靠性保障方法。     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.