合成己二腈反应技术研究——(Ⅴ)己二腈工业反应过程模拟与反应器改造

对己二腈工业反应器提出了两釜串联带回流的模型,通过模拟计算得出模型的级间返混系数 f=6的结论。该模型能较好地预测工业反应器中物料组分浓度变化和气、液两相的流动特性;指出了现工业反应器的鼓泡中和段体积偏小是造成己二酸浓度偏高的关键;提出了可以通过增加串连一个鼓泡预反应段的改造方案,能有效地降低己二酸的浓度,从7%降至4%左右,从而能较好地减缓腐蚀和结焦。     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

陶艺的文化性与功能

中国古陶艺制品造型,釉色,装饰等艺术符号都与每时期的阶段性精神和物质生活相联系,但在"现代艺术"文化认识领域中,往往从理论思维角度把陶艺实用目的的物质性排斥在文化范畴之外。艺术常常强调物质的观赏性,而陶艺的实用功能就是这种文化类型的主体,陶艺的文化性和功能性,具有实用和审美文化的高度叠合,永久地承载着实用功能和精神功能两大内容。     

Study of 18-cm long single-sided AC-coupled silicon microstripdetectors

The SSC GEM silicon Central Tracker design incorporated 18-cm long single-sided AC-coupled silicon microstrip ladders. Compared to the 12-cm long ladders considered in the preliminary stages of the tracker design, the 18-cm long ladders have the advantage of reduced cost, channel count and overall power consumption, and led to a simplified tracker assembly. However, such long ships also present the challenge of maintaining satisfactory performance. The increased capacitance and series resistance contribute to lower signal-to-noise ratios, longer time walk, higher power consumption per channel and increased probability of crosstalk to neighboring channels. In this paper, an accurate method to calculate the geometric capacitance of the AC-coupled microstrips is presented and the calculated results are compared with measurements, SPICE simulations are performed to predict the noise, the extent of interstrip capacitive coupling and the dispersion of the detector signal due to the finite series resistance of the metal strips and the long length of the detector. The influence of the preamplifier current and the shaping time on the signal and noise levels is also presented. The study concludes that the 18-cm long ladders can successfully satisfy the performance goals of the GEM silicon Central Tracker     

Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

汽车发动机电机铁芯用钢(ADW2)的研制开发

鞍钢研制开发的汽车发动机启动电机用钢是针对汽车电机铁芯用钢（定、转子）而开发的电机钢类产品。介绍了该产品的研制过程及规格、特点。通过批量试制及装机试验，产品巳满足用户的使用要求。     

显影液QA,QC的科学方法

本文为自动洗片机用高温快速显影液的科学管理与质量保证提供了简便、科学的检测方法,力医(?)影像质量的提高提供了可靠的保证。具有科学性、实用性、普及性。     

铝液夹杂物检测DMIRT－Ⅲ法的试验研究

提出了一种新的铝液夹杂物快速检测方法。导出了该法的检测原理方程。分析并试验研究了影响检测重复性和分辨率的因素。试验选择了较好的检测参数，并获得了较好的检测结果。     

Simulation study of peak junction temperature and power limitationof AlGaAs/GaAs HBTs under pulsed and CW operation

The authors have used a 3-D transmission-line matrix (TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs/GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design