A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Stabilization of inter-area and/or oscillatory modes in large-scale power system by voltage impedance power system (VIPS) apparatus based on decentralized control scheme

New technologies such as power electronics have made it possible to change continuously the impedance of a power system not only to control power flow but also to enhance stability. A power system incorporating a variable impedance apparatus such as a variable series capacitor (VSrC) and high-speed phase shifter (HSPS) is called VIPS (Variable Impedance Power System) by the authors. This paper proposes a novel control method of VIPS apparatus such as VSrC and HSPS installed at an interconnecting point for stabilizing inter-area unstable and/or oscillatory modes. The proposed design method of the control system is a kind of hierarchical decentralized control method of a large-scale power system based on a Lyapunov function. Under the proposed control scheme, each subsystem can be stabilized independently by local controllers such as AVR, speed governor and PSS, and then the whole interconnected system can be stabilized by VIPS apparatus taking into account interactions between subsystems. The effectiveness and robustness of the VIPS apparatus control are shown by numerical examples with model systems including a large-scale power system.     

Functioning survival rate of fixtures and superstructures of osseointegrated implants: ten years of progress in Tokyo Dental College Hospital (second report)

Endoglucanase production was measured in culture filtrates of four species of Saccobolus growing in media containing glucose or crystalline cellulose as the only carbon sources. Enzyme activity was four to seven times higher in the presence of cellulose than glucose. S. saccoboloides showed maximal growth and enzyme production. The extracellular proteins secreted during growth on cellulose were separated by polyacrylamide gel electrophoresis and stained for proteins. A zymogram technique was used to visualize bands with endoglucanase activity. The four species showed different protein and isoenzyme patterns.     

Synthesis of tetramethyl-p-silphenylenesiloxanedimethylsiloxane triblock copolymer by employing living anionic polymerization

Dimethylsiloxane-tetramethyl-p-silphenylenesiloxane-dimethylsiloxane (DMS-TMPS-DMS) triblock copolymer was synthesized by employing living anionic polymerization of hexamethylcyclotrisiloxane (D₃). Two synthetic methods were carried out for the polymerization. One of those methods was the anionic polymerization of D₃ initiated at the silanolate anion which was prepared from the terminal hydroxyl group of silanol-terminated TMPS prepolymer by reaction with n-butyllithium (method 1). The other was the coupling reaction of vinyl-terminated TMPS prepolymer with hydrosilyl-terminated DMS prepolymer obtained from the anionic polymerization of D₃ by using diphenylmethylsilanolate anion as initiator (method 2). In method 1, DMS contents of the copolymers ranged from 25.8 to 72.5 wt% and the values agreed with the ratio of D₃ to TMPS prepolymer. The weight-average molecular weights ranged from 1.36×10⁴ to 19.4×10⁴ and were close to the predicted values calculated from the $\text{M}\text{?}{}_{\mathrm{v}}$ of the TMPS prepolymer and the amount of D₃ added. In the case of method 2, weight-average molecular weights ranged from 19.5×10⁴ to 24.2×10⁴. The high molecular weight copolymer could thus be obtained by method 2. Intrinsic viscosity values of the triblock copolymers agreed with calculated values obtained by considering the copolymer as a binary mixture of these homopolymers. Differential scanning calorimetry and thermogravimetry were carried out on the triblock copolymers. The equilibrium melting temperatures of each of the copolymers were very close to that of poly-TMPS (160°C). The glass transition temperature and heat of fusion were decreased as the DMS content was increased. The thermogravimetric curves for the copolymers indicated that the thermal stability of the triblock copolymer was intermediate between the DMS and TMPS homopolymers.     

UHV shunt reactor for secondary arc extinction on multiphase reclosing

Secondary-arc suppression is necessary for successful fast, multiphase reclosing on UHV lines. Installation of a shunt reactor is one of the most effective methods of rapidly extinguishing the secondary arc. For multiphase reclosing on untransposed double-circuit UHV lines, a zero-sequence compensated balanced shunt reactor cannot suppress the secondary arc sufficiently. This is because of the imbalance in electrical couplings among phases. A zero-sequence compensated unbalanced shunt reactor is proposed to compensate for the imbalance in the electrostatic couplings. The effects of this reactor on suppressing the secondary arc can easily be analysed by the introduction of phase-to-phase compensation parameters. Such parameters can be used to decide on the optimum shunt reactor for secondary-arc extinction.     

Oxide thickness dependence of nitridation effects on TDDB characteristics

Wet oxide thicknesses dependence of nitridation effects on electrical characteristics, charge trapping properties and TDDB (Time Dependent Dielectric Breakdown) characteristics have been investigated. It is found that the difference of conduction current between the wet and nitrided wet oxide increases with increasing oxide thickness both for negative and positive bias to the gate until constant current stress is applied. After the stress, with decreasing oxide thickness both in wet and nitrided wet oxide leakage current increases. Up to 60 Å no difference was observed between the wet and nitrided wet oxide but at 50 Å nitrided wet oxide has less increase of current comparing to the wet oxide for the same stress. In wet oxide with increasing stress current density initial hole trap decreases but electron trap increases whereas in nitrided wet oxide has less initial hole trap and also electron trap is less comparing to the wet oxide. Both in wet and nitrided wet oxide for negative bias stress, time to 50 % breakdown decreases with decreasing thickness but at 50 Å a turn-around effect was observed due to nitridation i.e., the 50 % breakdown time is greater for nitrided wet oxide comparing to the wet oxide. On the contrary, for positive bias stress 50 % breakdown time increases with decreasing oxide thickness both in wet and nitrided wet oxide. For positive bias also a turn-around effect is observed at 50 Å i.e., 50% breakdown time is less in nitrided wet oxide comparing to the wet oxide. The improved reliability of nitrided wet oxide at the thin region of 50 Å seems to be due to the increase of more Si---N bond to the interface of oxide and Si comparing to the thick oxide of above 60 Å for the same nitridation conditions.     

A 950-MHz rectifier circuit for sensor network tags with 10-m distance

This paper presents a 950-MHz wireless power transmission system and a high-sensitivity rectifier circuit for ubiquitous sensor network tags. The wireless power transmission offers a battery-life-free sensor tag by recharging the output power of a base station into a secondary battery implemented with the tag. For realizing the system, a high-sensitivity rectifier with dynamic gate-drain biasing has been developed in a 0.3-/spl mu/m CMOS process. The measurement results show that the proposed rectifier can recharge a 1.2-V secondary battery over -14-dBm input RF power at a power conversion efficiency of 1.2%. In the proposed wireless system, this sensitivity corresponds to 10-m distance communication at 4-W output power from a base station.     

Amplitude Statistics of Sea-Ice Clutter Using a Millimeter Wave Radar

Sea-ice clutter was measured using a millimeter wave radar with frequency of 34.86GHz and pulse length of 30ns. To determine the sea-ice clutter amplitude statistics, we investigated the log-normal, Weibull, log-Weibull and K-distributions using the Akaike Information Criterion (AIC), which is more rigorous fit of the distribution to the data than the least-squares method. It is shown that the amplitude of sea-ice clutter obeys almost a log-Weibull distribution.     

Advanced CD Control Technology for 65-nm Node Dual Damascene Process

This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.     

A Low Power Dissipation Technique for a Low Voltage OTA

This paper proposes a novel low power dissipation technique for a low voltage OTA. A conventional low power OTA with a class AB input stage is not suitable for a low voltage operation (±1.5 V supply voltages), because it uses composite transistors (referred to CMOS pair) which has a large threshold voltage. On the other hand, the tail-current type OTA needs a large tail-current value to obtain a sufficient input range at the expense of power dissipation. Therefore, the conventional tail-current type OTA has a trade-off between the input range and the power dissipation to the tail-current value. The trade-off can be eliminated by the proposed technique. The technique exploits negative feedback control including a current amplifier and a minimum current selecting circuit. The proposed technique was used on Wang's OTA to create another OTA, named Low Power Wang's OTA. Also, SPICE simulations are used to verify the efficiency of Low Power Wang's OTA. Although the static power of Low Power Wang's OTA is 122 W, it has a sufficient input range, whereas conventional Wang's OTA needs 703 W to obtain a sufficient input range. However, we can say that as the input signal gets larger, the power of Low Power Wang's OTA becomes larger.