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排序方式: 共有754条查询结果,搜索用时 23 毫秒
1.
Vancha Harish Effi Haque Magdalena
miech Hiroaki Taniguchi Sarah Jamieson Devesh Tewari Anupam Bishayee 《International journal of molecular sciences》2021,22(9)
Xanthohumol (XH) is an important prenylated flavonoid that is found within the inflorescence of Humulus lupulus L. (Hop plant). XH is an important ingredient in beer and is considered a significant bioactive agent due to its diverse medicinal applications, which include anti-inflammatory, antimicrobial, antioxidant, immunomodulatory, antiviral, antifungal, antigenotoxic, antiangiogenic, and antimalarial effects as well as strong anticancer activity towards various types of cancer cells. XH acts as a wide ranging chemopreventive and anticancer agent, and its isomer, 8-prenylnaringenin, is a phytoestrogen with strong estrogenic activity. The present review focuses on the bioactivity of XH on various types of cancers and its pharmacokinetics. In this paper, we first highlight, in brief, the history and use of hops and then the chemistry and structure–activity relationship of XH. Lastly, we focus on its prominent effects and mechanisms of action on various cancers and its possible use in cancer prevention and treatment. Considering the limited number of available reviews on this subject, our goal is to provide a complete and detailed understanding of the anticancer effects of XH against different cancers. 相似文献
2.
Jincy Joy Jessica Pereira Rachida Aid‐Launais Graciela Pavon‐Djavid Alok R Ray Didier Letourneur Anne Meddahi‐Pell Bhuvanesh Gupta 《Polymer International》2019,68(7):1367-1377
The work reported involved the fabrication of an electrospun tubular conduit of a gelatin and polycaprolactone (PCL) blend as an adventitia‐equivalent construct. Gelatin was included as the matrix for increased biocompatibility with the addition of PCL for durability. This is contrary to most of the literature available for biomaterials based on blends of gelatin and PCL where PCL is the major matrix. The work includes the assiduous selection of key electrospinning parameters to obtain smooth bead‐free fibres with a narrow distribution of pore size and fibre diameter. Few reports elucidate the optimization of all electrospinning parameters to fabricate tubular conduits with a focus on obtaining homogeneous pores and fibres. This stepwise investigation would be unique for the fabrication of gelatin–PCL electrospun tubular constructs. The fabricated microfibrous gelatin–PCL constructs had pores of size ca 50–100 μm reportedly conducive for cell infiltration. The measured value of surface roughness of 57.99 ± 17.4 nm is reported to be favourable for protein adhesion and cell adhesion. The elastic modulus was observed to be similar to that of the tunica adventitia of the native artery. Preliminary in vitro and in vivo biocompatibility tests suggest safe applicability as a biomaterial. Minimal cytotoxicity was observed using MTT assay. Subcutaneous implantation of the scaffold demonstrated acute inflammation which decreased by day 15. The findings of this study could enable the fabrication of smooth bead‐free microfibrous gelatin–PCL tubular construct as viable biomaterial which can be included in a bilayer or a trilayer scaffold for vascular tissue engineering. © 2019 Society of Chemical Industry 相似文献
3.
Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm. 相似文献
4.
K. Chatty T. P. Chow R. J. Gutmann E. Arnold D. Alok 《Journal of Electronic Materials》2002,31(5):356-360
Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides.
While the field-effect mobilities were approximately 3–5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved
threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized
MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed
oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample. 相似文献
5.
6.
Distributed active storage architectures are designed to offload user-level processing to the peripheral from the host servers.
In this paper, we report preliminary investigation on performance and fault recovery designs, as impacted by emerging storage
interconnect protocols and state-of-the-art storage devices. Empirical results obtained using validated device-level and interconnect
data demonstrate the significance of the said parameters on the overall system performance and reliability. 相似文献
7.
Das Abhishek Ozdemir Serkan Memik Gokhan Zambreno Joseph Choudhary Alok 《Computer Architecture Letters》2008,7(1):5-8
As transistor feature sizes continue to shrink intothe sub-90nm range and beyond, the effects of process variationson critical path delay and chip yields have amplified. A commonconcept to remedy the effects of variation is speed-binning, bywhich chips from a single batch are rated by a discrete range offrequencies and sold at different prices. In this paper, we discussstrategies to modify the number of chips in different bins andhence enhance the profits obtained from them. Particularly, wepropose a scheme that introduces a small Substitute Cacheassociated with each cache way to replicate the data elementsthat will be stored in the high latency lines. Assuming a fixedpricing model, this method increases the revenue by as much as13.8% without any impact on the performance of the chips. 相似文献
8.
Alok Kumar Rastogi A. K. Tiwari R. P. Shrivastava 《Journal of Infrared, Millimeter and Terahertz Waves》1993,14(7):1445-1453
The dielectric optical wave guide is finding growing attention at millimeter wave frequencies. However the dielectric optical waveguide radiates at bends and thus transmission loss increases. These radiations are in the outword direction of bends. This output radiation at output bends arises due to change in phase velocities of the propagating wave at the centre of the dielectric guide and the phase velocity at the outer surface of the dielectric guide. A unique methiod is suggested to avoid these radiation losses.Experimental results are also shown at microwave frequencies. 相似文献
9.
Alok Kumar Rastogi A. K. Tiwari 《Journal of Infrared, Millimeter and Terahertz Waves》1993,14(9):1825-1845
A shielded suspended dielectric guide is a dielectric rectangular slab enclosed by regular metallic side walls from all the sides. This type of structure is used in dual mode phase shifter where the size of the normal rectangular wave guide is reduced at the ends, where a dielectric material is embeded in ferrite core. Hence impedance variation of a phase shifter at its transition may be easily calculated using shielded suspended dielectric guide which is a prime parameter for optimum efficiency of wave launching. 相似文献
10.
Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm2. The specific on-resistance for these diodes was found to be low (2×10 -3 Ω-cm2 at room temperature) and showed a T 1.6 variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature 相似文献