Mammogram pectoral muscle removal and classification using histo-sigmoid based ROI clustering and SDNN

Multimedia Tools and Applications - Mammograms are the images used by radiologists to diagnose breast cancer. Breast cancer is one of the most common cancers in women. The early detection of breast...     

Formation of acrylamide in microwave-roasted sorghum and associated dietary risk

The effect of microwave roasting parameters (300, 450 and 600 W; 5, 10 and 15 min) on acrylamide content in sorghum grain was determined using High Pressure Liquid Chromatography (HPLC)-photo diode array (PDA) detector coupled with C-18 column. Samples roasted at 300 and 450 W did not possess acrylamide, whereas 600 W (15 min) favoured formation of 2740.19 µg/kg of acrylamide, levels far exceeding the defined European Union (EU) limits. The chronic daily intake (CDI) for acrylamide through consumption of such grain flour was 3.25–9.5-fold higher to Joint FAO/WHO Expert Committee on Food Additives (JECFA) defined high exposure limits. The margin of exposure (MOE) values ranged from 4.3 to 12.76 and from 11.07 to 32.27 for neoplastic and neurological effects, respectively, demonstrating high exposure and serious health concerns associated with dietary intake of this toxicant. This study assesses the risk for the Indian population and highlights the importance of optimising process parameters for food product to minimise such exposure risks.     

Technological Aspects of Synthesizing Ceramic Coatings by Flow-Through Micro-Arc Oxidation

Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized...     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Modeling of Ignition and Combustion of a Coflowing Hydrogen Jet in a Supersonic Air Flow

Combustion, Explosion, and Shock Waves - Results of a numerical study of mixing, ignition, and combustion of a cold hydrogen jet propagating along the lower wall of a channel parallel to a...     

Three dimensional reconstruction of brain tumor along with space occupying in lesions

Multimedia Tools and Applications - The three-dimensional models of brain tumors serve as diagnostic assistance for physicians, surgeons, and radiologists. The proposed system establishes an...     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.