首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   292997篇
  免费   4992篇
  国内免费   2129篇
电工技术   5609篇
技术理论   1篇
综合类   1399篇
化学工业   42421篇
金属工艺   12106篇
机械仪表   9271篇
建筑科学   7430篇
矿业工程   1863篇
能源动力   7449篇
轻工业   23988篇
水利工程   3361篇
石油天然气   6327篇
武器工业   149篇
无线电   35077篇
一般工业技术   58504篇
冶金工业   52386篇
原子能技术   7635篇
自动化技术   25142篇
  2021年   3073篇
  2020年   2261篇
  2019年   2523篇
  2018年   4082篇
  2017年   4279篇
  2016年   4422篇
  2015年   3169篇
  2014年   5242篇
  2013年   12953篇
  2012年   8169篇
  2011年   10885篇
  2010年   8513篇
  2009年   9676篇
  2008年   9960篇
  2007年   9916篇
  2006年   8515篇
  2005年   7818篇
  2004年   7592篇
  2003年   7301篇
  2002年   7022篇
  2001年   7133篇
  2000年   6709篇
  1999年   6984篇
  1998年   16691篇
  1997年   11881篇
  1996年   9127篇
  1995年   6987篇
  1994年   6128篇
  1993年   6144篇
  1992年   4450篇
  1991年   4214篇
  1990年   4115篇
  1989年   4086篇
  1988年   3772篇
  1987年   3411篇
  1986年   3410篇
  1985年   3764篇
  1984年   3483篇
  1983年   3235篇
  1982年   3042篇
  1981年   3070篇
  1980年   3048篇
  1979年   2841篇
  1978年   2884篇
  1977年   3169篇
  1976年   4121篇
  1975年   2425篇
  1974年   2379篇
  1973年   2398篇
  1972年   2020篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
1.
Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co-doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.  相似文献   
2.
Wireless Personal Communications - Chronic kidney disease (CKD) is a gradual loss of kidney function over the period of time and it is irrevocable once functionality reaches the critical state....  相似文献   
3.
Food Science and Biotechnology - A rich source of nutrients, figs have a number of clinically validated benefits. This study aimed to evaluate the in vitro simulated gastrointestinal digestion, and...  相似文献   
4.
5G蜂窝网络发展迅猛,其覆盖面积将逐渐增大,因此使用5G蜂窝网络进行定位是有研究潜力的研究方向。本文提出一种新的深度学习技术来实现高效、高精度和低占用的定位,以代替传统指纹定位过程中繁重的指纹库生成以及距离计算。该方法建立了一个特殊的卷积神经网络,并根据5G天线信号的接收信号强度指示、相位和到达角等特征量,选择合适的输入数据格式构造样本组建训练集,对该卷积神经网络进行训练。训练得到的卷积神经网络可以替代指纹定位中的庞大指纹库,非常有利于直接在5G移动设备端实现定位。虽然卷积神经网络在训练过程中需要大量时间,但在训练完毕后直接进行分类定位的速度非常快,可以保障定位实现的实时性。本文所实现的卷积神经网络权重与偏置所占内存不到0.5 MB,且能够在实际应用环境中以95%的定位准确率以及0.1 m的平均定位精度实现高精度定位。  相似文献   
5.
Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an...  相似文献   
6.

We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.

  相似文献   
7.
To investigate the evolution of the structural and enhanced magnetic properties of GdMnO3 systems induced by the substitution of Mn with Cr, polycrystalline GdMn1-xCrxO3 samples were synthesized via solid-state reactions. XRD characterization shows that all GdMn1-xCrxO3 compounds with single-phase structures crystallize well and that Cr3+ ions entering the lattice sites of GdMnO3 induce structural distortion. SEM results indicate that the grain size of the synthesized samples (a few microns) decreases as the Cr substitution concentration increases. Positron annihilation lifetime spectroscopy reveals that vacancy-type defects occur in GdMn1-xCrxO3 ceramics and that the vacancy size and concentration clearly change with the Cr content. The temperature and field dependence of the magnetization curves show that Cr substitution significantly influences the magnetic ordering of the gadolinium sublattice, improving the weak ferromagnetic transition temperature and magnetization of GdMn1-xCrxO3. The enhanced magnetization of GdMn1-xCrxO3 is closely related to the vacancy defect concentration.  相似文献   
8.
Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...  相似文献   
9.
Journal of Communications Technology and Electronics - In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of...  相似文献   
10.

In this work we analysed the stepwise charging technique to find the limits from which it is beneficial in terms of load capacitance and charge–discharge frequency. We included in the analysis practical limitations such as the consumption of auxiliary logic needed to implement the technique and the minimum size of auxiliary switches imposed by the technology. We proposed an ultra-low-power logic block to push these limits and to obtain benefits from this technique in small capacitances. Finally, we proposed to use a stepwise driver in the driving of the gate capacitance of power switches in switched-capacitor (SC) DC–DC converters. We designed and manufactured, in a 130 nm process, a SC DC–DC converter and measured a 29% energy reduction in the gate-drive losses of the converter. This accounts for an improvement of 4% (from 69 to 73%) in the overall converter efficiency.

  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号