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1.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
2.
Yamanaka N. Kawano R. Oki E. Yasukawa S. Okazaki K. 《Advanced Packaging, IEEE Transactions on》2002,25(1):65-72
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection 相似文献
3.
Hiroto Imai Toshiyuki Ogawa Kazuo Sugimoto Masakazu Kataoka Yumo Tanaka Takehiko Ono 《Applied catalysis. B, Environmental》2005,55(4):259-265
The Co/MFI(SiO2/Al2O3 = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N2 at 250 °C for the selective catalytic reduction (SCR) of NOx. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl2 exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs. 相似文献
4.
Recently, a demand for small-capacity generators has been increasing as electric sources in small ships and automobiles or as portable electric sources driven by engines. It is desired that the structure of small-capacity generators be simple and robust, and that the generators be highly reliable, easily maintained and controlled. This paper describes an analysis of the original brushless synchronous generator without exciter. The output voltage can be adjusted in the wide range by controlling the stator dc current. To analyze the characteristics of this generator, the finite element method is applied. It is found that the results of theoretical analysis agree well with the experimental results. 相似文献
5.
Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
6.
Dr. Kazuo Ishihara 《Computing》1987,38(2):117-132
In this paper, we consider the successive overrelaxation method with projection for obtaining the finite element solutions under the nonlinear radiation boundary conditions. In particular we establish the convergence of the successive overrelaxation method with projection. Some numerical results are also given to illustrate the usefulness. 相似文献
7.
Streit D.C. Oki A.K. Umemoto D.K. Velebir J.R. Stolt K.S. Yamada F.M. Saito Y. Hafizi M.E. Bui S. Tran L.T. 《Electron Device Letters, IEEE》1991,12(9):471-473
The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×108 h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology 相似文献
8.
Ken Kato Yasuhiro Kasuga Masanori Fujiwara Kazuo Onda 《Electrical Engineering in Japan》1996,116(4):94-108
Laboratory-scale and parametric experiments of SO2 and NOx removal from the simulated combustion gas by pulsed corona discharge have been performed by changing the combustion gas composition and temperature, the electrode configuration of plasma reactor, and the polarity of high-voltage electrode. The following results are obtained: 1) the higher the concentration of H2O and O2, the higher the efficiency of desulfurization and denitrification at the same specific input; 2) the pulsed corona discharge with a voltage pulsewidth as short as 200 ns of negative polarity shows the possibility to attain almost 90 percent deSOx and deNOx efficiency at the specific discharge input of 20 J/g, which is almost the same as the specific input in the electron-beam process; 3) the deNOx characteristics show a little temperature dependence in the range of 70 to 130°C, but the deSOx efficiency increases rapidly in the temperature region below 100°C suggesting the thermochemical dependence of deSOx reaction; 4) when desulfurization and denitrification proceed, the white dendritic powder deposits on the plasma reactor whose composition is identified to be 49 mol% (NH4)2SO4 and 47 mol% of 2NH4NO3 · (NH4)2SO4, and the ratio of SO2, NO and NH3 of the deposit is almost equal to that of supplied gas. 相似文献
9.
Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 108 times higher than that of a nongradient SiC ceramic. 相似文献
10.