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1.
2.
A simple and successful design method that yields a wideband and compact antenna without a ground plane is proposed. The antenna, referred to as the folded loop antenna, can, with the right parameters, achieve wideband characteristics. Calculated and measured results agree well and more than 50% bandwidth (return loss /spl les/-10 dB) is obtained. 相似文献
3.
Wu Ting M. Badaye T. Morishita N. Koshizuka S. Tanaka 《Journal of Superconductivity》1996,9(6):637-645
Recently, superconducting Nd1Ba2Cu3Oy (Ndl23) thin films with high superconducting transition temperature (T
c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y1Ba2Cu3Sy thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films. 相似文献
4.
Masashi Morishita 《Journal of Low Temperature Physics》2007,148(5-6):761-765
Heat capacities of a submonolayer 3He solid film adsorbed on a graphite surface are measured in magnetic fields up to 400 Oe. The measured heat capacity shifts
to higher temperatures with an increasing magnetic field. The amplitudes of the shifts are twenty times larger than the magnitude
of the Zeeman energy, which is anomalously large. With regard to the origin of these large shifts, the reduction of frustrations
and the weakening of the competition between multiple spin exchange interactions are discussed. 相似文献
5.
GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned 相似文献
6.
K. Yasuda Y. Tomita Y. Masuda T. Ishiguro Y. Kawauchi H. Morishita Y. Agata 《Journal of Electronic Materials》2002,31(7):785-790
Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride
(DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped
layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher
electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth
temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×1016 cm−3 to 2.6×1018 cm−3. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms
for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors.
Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing
the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger
for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and
to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface
also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth
temperature. 相似文献
7.
It is shown that wavelength-selective fused taper couplers can be made by using the large difference in field distribution, between core and cladding modes. It is evident from the calculation results that fibers with a high-index difference and a thin outside diameter are necessary to fabricate the couplers. Fused taper couplers are made of thin fibers with a cladding diameter of 66.0 μm and an index difference of 0.84%. The splitting ratio of the coupler obtained is more than 20 dB in the 1.53-μm region and less than -20 dB in the 0.8 to 1.0-μm region. The loss is less than 0.2 dB and 0.4 dB in the 1.53-μm and the 0.8 to 1.0-μm regions, respectively 相似文献
8.
A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide
technology.1 This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such
as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers)
with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder
for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously
formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion.
We employed one large thermal via (4.5 mm?) and four small vias (1.0 mm?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina
base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC
and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by
adhesion test, pressure cooker test, etc. 相似文献
9.
Kiichi Oda Hirohide Yata Tetsuo Yoshio Kazuo O-Oka Kohei Oda 《Journal of Materials Science》1986,21(2):637-642
Ta100-x
B
x
alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta100-x
B
x
(45 x 58) films consist of the amorphous phase, while the TaB2 crystal phase was observed in Ta100-x
B
x
(66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB2 parallel to the film surface was observed in Ta34B66. The d.c. electrical conductivity of Ta100-x
B
x
(45 x 77) films decreases with increasing boron content in the range 6.7 × 103 to 1.3 × 103–1 cm–1. The micro-Vickers hardness of Ta100-x
B
x
(45 x 77) films was in the range 2200 to 2600 kg mm–2. 相似文献
10.
Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co2N, Co3N, Co4N and -Co. Co4N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co4N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g–1 with increasing content of N from 0 to 21.7 at%, and coercive forceI
H
c is the range of 43 to 5000e at room temperature. 相似文献