Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

Monte Carlo simulation of hydrogen absorption in palladium and palladium–silver alloys

A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition Pd_xAg_1−x (x=0.7–0.8) under H₂ pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.     

Freestream and vortex preservation properties of high-order WENO and WCNS on curvilinear grids

Freestream and vortex preservation properties of a weighted essentially nonoscillatory scheme (WENO) and a weighted compact nonlinear scheme (WCNS) on curvilinear grids are investigated. While the numerical technique used for the compact difference scheme can be applied to WCNS, applying it to WENO is difficult. This difference is caused by difference in the formulation of numerical fluxes. WENO computed in the generalized coordinate system does not work well for either freestream or vortex preservation, whereas WENO computed in the Cartesian coordinate system works well for both freestream and vortex preservation, but its resolution is lower than that of WCNS. In addition, WENO in the Cartesian coordinate system costs three times as much as WENO or WCNS in the generalized coordinate system. Therefore, WENO in the Cartesian coordinate system is not suitable for solving Euler equations on a curvilinear grid. On the other hand, WCNS computed in the generalized coordinate system works well for freestream and vortex preservation when used with the numerical technique proposed for the compact difference scheme. The results show that WCNS with this numerical technique can be used for an arbitrary grid system. In this paper, the excellent freestream and vortex preservation properties of WCNS when used with the numerical technique, compared with those of WENO, are shown for the first time.     

How international is Computers and Composition?

In this article, I examine to what extent Computers and Composition: An International Journal for Teachers of Writing is international. My analysis of several aspects of the journal indicates limited international scope. I also discuss two issues important when considering the potential international scope of computers and writing research and practices: the differing uses of computers for writing by different language users and the differing concepts of identity and self in different cultures in relation to writing. I conclude with concrete suggestions for broadening our perspectives on computers and writing and making this journal truly international.     

基于多路径广度优先搜索算法的代谢通路设计与实现

寻找从底物到产物的可行代谢通路是代谢工程设计中的核心环节.针对复杂代谢网络中代谢通路不唯一的情况以及传统K条最短路径(K-Shortest Path,KSP)算法效率低的问题,该文通过对传统KSP算法的优化,引入关键边概念以减少非必要的重复计算;搭建代谢通路设计Web平台,使用并行计算方式提升了算法运算性能.最终,通过...     

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films—Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product of the total pressure and the oxygen concentration, which correspond to oxygen partial pressure P_O2. Where the P_O2 is higher than 0.03 MPa, few of the squareness of the hysteresis curve are excellent. The squareness of the hysteresis curves dramatically improve as the P_O2 decreases. Where the P_O2 is lower than 0.01 MPa, the squareness deteriorates slightly. These changes in the D-E hysteresis curves are thought to be explained by the generation of lead and oxygen vacancies as a function of the P_O2.