Editorial: the March 2022 cover paper

Journal of Materials Science -     

Resource management in UAV-assisted MEC: state-of-the-art and open challenges

Wireless Networks - Unmanned aerial vehicles (UAV) have been widely used in various fields because of their high mobility and portability. At the same time, due to the rapid development of...     

Mammogram pectoral muscle removal and classification using histo-sigmoid based ROI clustering and SDNN

Multimedia Tools and Applications - Mammograms are the images used by radiologists to diagnose breast cancer. Breast cancer is one of the most common cancers in women. The early detection of breast...     

Formation of acrylamide in microwave-roasted sorghum and associated dietary risk

The effect of microwave roasting parameters (300, 450 and 600 W; 5, 10 and 15 min) on acrylamide content in sorghum grain was determined using High Pressure Liquid Chromatography (HPLC)-photo diode array (PDA) detector coupled with C-18 column. Samples roasted at 300 and 450 W did not possess acrylamide, whereas 600 W (15 min) favoured formation of 2740.19 µg/kg of acrylamide, levels far exceeding the defined European Union (EU) limits. The chronic daily intake (CDI) for acrylamide through consumption of such grain flour was 3.25–9.5-fold higher to Joint FAO/WHO Expert Committee on Food Additives (JECFA) defined high exposure limits. The margin of exposure (MOE) values ranged from 4.3 to 12.76 and from 11.07 to 32.27 for neoplastic and neurological effects, respectively, demonstrating high exposure and serious health concerns associated with dietary intake of this toxicant. This study assesses the risk for the Indian population and highlights the importance of optimising process parameters for food product to minimise such exposure risks.     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Opportunistic Routing Protocol Based EPO–BES in MANET for Optimal Path Selection

Wireless Personal Communications - Despite its various benefits, the Mobile Ad-hoc Network (MANET) has a number of obstacles due to its mobility, unstable topology, energy efficiency, and other...     

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...