Characterizations of friction welding joint interface for AISI 316

Because of heat amount is different from peripheral to central of friction welding interface, which is leaded to vary the characterizations along that interface. Current study, respectively, focused on the effect of different friction pressure on micro-structural and mechanical properties of that friction welding joint interface. Presently, these friction pressures are 110, 130, 150 and 170 MPa while kept all other conditions constant. The effects of different friction pressure on welding interface characterization were investigated by EDX, SEM, tensile, compression, impact and hardness tests. The tensile tests carried out on the standardized test piece with diameter 6 mm and 8 mm, thus, compression tests were extracted from the positions of 0°, 45° 90° with test specimen of 4 mm diameter and 6.5 mm length at weld center. Whereas, the impact test pieces were picked up in two positions, the first one is symmetrical, which it obtained to the respect of the rotation axis and the interface, on the other hand, the second one is non-symmetrical with the axis of rotation and symmetrical to the interface, for making the notch head coincide with the center of the welded joint, The obtained results showed that with reducing of friction pressure will present lack of bonding increasing from peripheral toward the welding center, which will responsible on reducing of the mechanical properties such as tensile, compression and impact strength.     

蛋类礼盒包装结构的缓冲性能研究

目的研究蛋类礼盒包装结构的缓冲性能。方法以蛋类尺寸为基础,建立可发性聚乙烯(expandable polyethylene. EPE)缓冲单元结构和组合结构,进行静态仿真分析和实验验证,比较结构在形状、叠合层数、组合形式等参数变化时的载荷与位移。结果结构层数变化相同时,单元结构的极限载荷从143N增加到236 N,组合结构的极限载荷从224 N增加到476 N,均呈近线性增长。结论蛋类礼盒包装中,组合结构的承载能力优于单元结构,通过单元结构的组合,可满足不同蛋类的包装要求。     

基于小角度高位技术的钻孔初采期瓦斯治理

回采工作面初采期瓦斯涌出不均衡,易出现瓦斯超限现象。针对新源煤矿近距离煤层群开采、瓦斯涌出量大等特点,提出了小角度高位钻孔抽采治理初采期瓦斯的方法;2219工作面应用实践表明,初采期内,小角度高位钻孔抽采瓦斯纯量最高5.25m3/min,瓦斯抽采率64.02%,回风流瓦斯浓度最高为0.32%,上隅角最高瓦斯浓度0.96%,未出现瓦斯超限现象,取得了很好的初采期瓦斯治理效果。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

500 kV 开关弹簧机构支架螺栓断裂的原因分析及处理

HPL500B2型弹簧机构支架(BA)螺栓断裂可能导致开关分合闸失败,对其原因进行分析,发现BA螺栓由于预紧固力矩过大,接近其扭断力矩,使得作用在BA螺栓上的力偏高,BA螺栓安全系数仅为12%,安全系数较低。列出BA螺栓更换步骤及注意事项,并详细介绍分闸、合闸弹簧调整步骤,为类似事件的处理提供参考。     

不同晶相结构ZrO2负载铜基催化剂用于二乙醇胺脱氢反应

通过制备不同晶相结构〔单斜相(m-ZrO_2)、四方相(t-ZrO_2)和无定型(a-ZrO_2)〕ZrO_2载体,再通过沉积沉淀法制得Cu/m-ZrO_2、Cu/t-ZrO_2和Cu/a-ZrO_2催化剂,分别用于催化二乙醇胺脱氢合成亚氨基二乙酸反应。采用XRD、氮气物理吸附脱附、XPS、H_2-TPR、CO_2-TPD对催化剂的结构进行了表征。结果表明,Cu/m-ZrO_2催化剂界面更加有利于Cu~+/Cu~0稳定存在,具有更多的碱性位点,且抗氧化性较好。在二乙醇胺脱氢反应中,Cu/m-ZrO_2催化剂性能最好,反应时间为2.5 h,亚氨基二乙酸收率为97.64%。