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1.
Pengfei Liang Jie Zhu Di Wu Hui Peng Xiaolian Chao Zupei Yang 《Journal of the American Ceramic Society》2021,104(6):2702-2710
Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co-doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics. 相似文献
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Multimedia Tools and Applications - Mammograms are the images used by radiologists to diagnose breast cancer. Breast cancer is one of the most common cancers in women. The early detection of breast... 相似文献
5.
Vijay Singh Sharanagat Prabhat K. Nema Lochan Singh Ankur Kumar 《International Journal of Food Science & Technology》2022,57(3):1654-1665
The effect of microwave roasting parameters (300, 450 and 600 W; 5, 10 and 15 min) on acrylamide content in sorghum grain was determined using High Pressure Liquid Chromatography (HPLC)-photo diode array (PDA) detector coupled with C-18 column. Samples roasted at 300 and 450 W did not possess acrylamide, whereas 600 W (15 min) favoured formation of 2740.19 µg/kg of acrylamide, levels far exceeding the defined European Union (EU) limits. The chronic daily intake (CDI) for acrylamide through consumption of such grain flour was 3.25–9.5-fold higher to Joint FAO/WHO Expert Committee on Food Additives (JECFA) defined high exposure limits. The margin of exposure (MOE) values ranged from 4.3 to 12.76 and from 11.07 to 32.27 for neoplastic and neurological effects, respectively, demonstrating high exposure and serious health concerns associated with dietary intake of this toxicant. This study assesses the risk for the Indian population and highlights the importance of optimising process parameters for food product to minimise such exposure risks. 相似文献
6.
F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
7.
Wang Chen Bao Chun-Hui Wu Wan-Yu Hsu Chia-Hsun Zhao Ming-Jie Zhang Xiao-Ying Lien Shui-Yang Zhu Wen-Zhang 《Journal of Materials Science》2022,57(26):12341-12355
Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate... 相似文献
8.
Shannon Lee Scott L. Carnahan Georgiy Akopov Philip Yox Lin-Lin Wang Aaron J. Rossini Kui Wu Kirill Kovnir 《Advanced functional materials》2021,31(16):2010293
Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi4P4 and IrSi3P3 are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and 29Si and 31P magic angle spinning NMR. In agreement with previous report RuSi4P4 crystallizes in NCS space group P1, while IrSi3P3 is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi4P4 and IrSi3P3 to be wide bandgap (Eg) semiconductors, Eg = 1.9 and 1.8 eV, respectively. RuSi4P4 and IrSi3P3 outperform the current state-of-the-art infrared SHG material, AgGaS2, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi4P4 and IrSi3P3 are promising candidates for longer wavelength NLO materials. 相似文献
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Wireless Personal Communications - Despite its various benefits, the Mobile Ad-hoc Network (MANET) has a number of obstacles due to its mobility, unstable topology, energy efficiency, and other... 相似文献
10.
Seredin P. V. Radam Ali Obaid Goloshchapov D. L. Len’shin A. S. Buylov N. S. Barkov K. A. Nesterov D. N. Mizerov A. M. Timoshnev S. N. Nikitina E. V. Arsentyev I. N. Sharafidinov Sh. Kukushkin S. A. Kasatkin I. A. 《Semiconductors》2022,56(4):253-258
Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid... 相似文献