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1.
Because of heat amount is different from peripheral to central of friction welding interface, which is leaded to vary the characterizations along that interface. Current study, respectively, focused on the effect of different friction pressure on micro-structural and mechanical properties of that friction welding joint interface. Presently, these friction pressures are 110, 130, 150 and 170 MPa while kept all other conditions constant. The effects of different friction pressure on welding interface characterization were investigated by EDX, SEM, tensile, compression, impact and hardness tests. The tensile tests carried out on the standardized test piece with diameter 6 mm and 8 mm, thus, compression tests were extracted from the positions of 0°, 45° 90° with test specimen of 4 mm diameter and 6.5 mm length at weld center. Whereas, the impact test pieces were picked up in two positions, the first one is symmetrical, which it obtained to the respect of the rotation axis and the interface, on the other hand, the second one is non-symmetrical with the axis of rotation and symmetrical to the interface, for making the notch head coincide with the center of the welded joint, The obtained results showed that with reducing of friction pressure will present lack of bonding increasing from peripheral toward the welding center, which will responsible on reducing of the mechanical properties such as tensile, compression and impact strength. 相似文献
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目的研究蛋类礼盒包装结构的缓冲性能。方法以蛋类尺寸为基础,建立可发性聚乙烯(expandable polyethylene. EPE)缓冲单元结构和组合结构,进行静态仿真分析和实验验证,比较结构在形状、叠合层数、组合形式等参数变化时的载荷与位移。结果结构层数变化相同时,单元结构的极限载荷从143N增加到236 N,组合结构的极限载荷从224 N增加到476 N,均呈近线性增长。结论蛋类礼盒包装中,组合结构的承载能力优于单元结构,通过单元结构的组合,可满足不同蛋类的包装要求。 相似文献
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在铝材生产中,熔炼、铸造工序是能源与资源消耗多的工序,因此,节约资源、降低烧损与能耗有着重要意义。降低能耗还可以相应地减少温室气体与有害、有毒物质排放,对环保有利。中国当前铝合金熔炼铸造能源与资源节约的主要措施:调整加工用锭坯供应结构,大幅提高电解铝厂供应的锭坯,由2013年供应的42%提高到"十三五"末的65%-70%;加快走出去的力度,到国外去办铝厂,将在国外生产的铝合金锭坯运回来,争取2020年出口的铝材与铝制品全部以进口锭坯加工,这是最大的资源与能源节约;加强废铝回收与有效再生利用;加强创新,大力采用新装备、新技术与新工艺;加强管理,精心操作,管理中还有较大的能源与资源节约潜力。 相似文献
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Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth. 相似文献
8.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. 相似文献
9.
Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed. 相似文献
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