Comprehensive numerical investigations on the thermal performance of heat recirculating micro combustor with pin fins for micro-thermal voltaic system applications

Aiming at improving the relatively low energy output and energy conversion efficiency of the micro-thermal voltaic (MTPV) system, an innovative heat recirculating micro combustor with pin fins is designed. The effects of pin fins arrangement, hydrogen/air equivalent ratio on the energy output and performance of CHMC, HMCP and HMCI are compared and investigated. The result shows that when the V_in is 6 m/s and Φ is 1.0, the emitter power of CHMC is 72.76W, and that of HCMP and HCMI micro combustor are 75.99W and 76.35W. and the emitter efficiency of CHMC, HCMP and HCMI is 41.93%, 43.26% and 44.01%. HMCI has better energy output capability compared with CHMC and HMCP. Even though, HMCI brings a higher pressure drop, it is within the acceptable range. When the V_in is 6 m/s, the pressure drop from the pin fins only accounts for 26.4% of the total pressure drop for HMCI. Through the study of equivalent ratio, it is found that HMCI has good adaptability in different equivalent ratio range. This work provides new ideas for the development of MTPV system in the future.     

Finite-time adaptive fuzzy control for a class of output constrained nonlinear systems with dead-zone

The article investigates the finite-time adaptive fuzzy control for a class of nonlinear systems with output constraint and input dead-zone. First, by skillfully combining the barrier Lyapunov function, backstepping design method, and finite-time control theory, a novel adaptive state-feedback tracking controller is constructed, and the output constraint of the nonlinear system is not violated. Second, the fuzzy logic system is used to approximate unknown function in the nonlinear system. Third, the finite-time command filter is introduced to avoid the problem of “complexity explosion” caused by repeated differentiations of the virtual control signal in conventional backstepping control schemes. Meanwhile, a new saturation function is added in the compensating signal for filter error to improve control accuracy. Finally, based on Lyapunov stability analysis, all the signals of the closed-loop are proved to be semi-globally uniformly ultimately bounded, and the tracking error converges to a small neighborhood region of the origin in a finite time. A simulation example is presented to demonstrate the effectiveness for the proposed control scheme.     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

超宽带大功率合成器设计北大核心CSCD

在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。     

Electrical and magnetic properties of double perovskite: Y2CoMnO6

In this communication, the structural, micro-structural, dielectric, electrical, magnetic, and leakage-current characteristics of a double perovskite (Y₂CoMnO₆) ceramic material have been reported. The material was synthesized via a high-temperature mixed-oxide route. The compound crystallizes in a monoclinic structure which is confirmed from preliminary X-ray structural study. The morphological study by using scanning electron micrograph reveals the almost homogeneous distribution of grains throughout the surface of the sample. The nature of frequency-dependence of dielectric constant has been described by the Maxwell-Wagner model. The occurrence of a dielectric anomaly in the temperature dependence of dielectric permittivity study demonstrates the ferroelectric-paraelectric phase transition in the material. From the Nyquist plots, we found the existence of both grain and grain boundary effects. The frequency dependence of conductivity was studied by the Jonscher’s Power law, and the conduction phenomenon obeys the large overlapping polaron tunneling model. By using the Arrhenius equation, the activation energy has been calculated which is nearly equal to the energy required for the hoping of the electron. Both impedance and conductivity analysis demonstrate that the sample exhibits negative temperature coefficient of resistance (NTCR) properties indicating the semiconducting type of material at high temperatures. The anti-ferromagnetic character of the material is observed from the nature of magnetic hysteresis loop. The leakage current analysis suggests that the conduction process in the material follows the space charge limited conduction phenomenon. Such material will be helpful for modern electronic devices and spintronic applications.     

Output feedback controller for polytopic systems exploiting the direct searching of the design space

This paper deals with the problem of designing a robust static output feedback controller for polytopic systems. The current research that tackled this problem is mainly based on LMI method, which is conservative by nature. In this paper, a novel approach is proposed, which considers the design space of the controller parameters and iteratively partitions the space to small simplexes. Then, by assessing the stability in each simplex, the solution space for design parameters is directly determined. It has been theoretically proved that, if there exists a feasible solution in the design space, the algorithm can find it. To validate the result of the proposed approach, comparative simulation examples are given to illustrate the performance of the design methodology as compared to those of previous approaches.     

Robust predictive extended state observer for a class of nonlinear systems with time-varying input delay

ABSTRACT

This paper deals with asymptotic stabilisation of a class of nonlinear input-delayed systems via dynamic output feedback in the presence of disturbances. The proposed strategy has the structure of an observer-based control law, in which the observer estimates and predicts both the plant state and the external disturbance. A nominal delay value is assumed to be known and stability conditions in terms of linear matrix inequalities are derived for fast-varying delay uncertainties. Asymptotic stability is achieved if the disturbance or the time delay is constant. The controller design problem is also addressed and a numerical example with an unstable system is provided to illustrate the usefulness of the proposed strategy.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.