用于电弧检测的电力专用SoC设计

针对传统的电弧电路故障检测结果不准确的问题,设计用于电弧检测的SoC系统,并且在55nm工艺下进行流片验证。采用包含两种结构的模数转换器的片上电压源,设计了锁相环以及复位电路,精度最高可达8.67 bit。验证结果表明,本设计可提高电弧检测的准确性。     

Three-dimensional and anisotropic numerical analysis of a PEM fuel cell

In this study, the effects of cell temperature and relative humidity on charge transport parameters are numerically analyzed. In order to perform this analysis, three-dimensional and anisotropic numerical models are developed. The numerical models are integrated into the experimental values for anisotropic electrical conductivities, as depending on cell temperature and relative humidity, that were obtained from our previous study. The achieved results indicate that the values of current densities in the in-plane direction increase with increasing cell temperature and relative humidity, while the current densities reach a maximum in the rib regions for both the numerical model at the through-plane direction. The behaviors of electrolyte potentials are similar with changes in the cell temperature and relative humidity. In addition, the cathode electrical potentials in both the in-plane direction and through-plane direction do not change to a considerable amount with increasing cell temperature and relative humidity.     

Constructing magnetically recoverable CdS/CaFe2O4 P–N heterojunctions for enhanced photoelectrochemical properties towards H2 evolution reaction

A novel CdS/CaFe₂O₄ (CS/CFO) heterogeneous p-n junction was created by thermal deposition of CaFe₂O₄ nanoparticles on CdS rods. The CS/CFO hetero-structured photocatalysts exhibited increasingly efficient visible light harvesting compared to the bare CdS. The CS/CFO composites also presented higher photocurrent and slower decay of photoluminescence, suggesting a better separation of the photo-generated electrons and holes. The photocatalytic H₂ evolution quantity on the optimized CS/CFO composite from water in the presence of ethanol was up to 2200 μmol after 3-h visible light illumination, which is more than twice that of the pristine CdS. The chemical interaction between CdS and CaFe₂O₄ was confirmed by the shifts in the XPS peaks, which made it possible for the charge carriers to transfer across the p-n junction interface. This research highlights the importance of forming an interfacial p-n heterojunction between two semiconductors for efficient charge separation and improved photocatalytic performance.     

Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications

Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr_1-xPr_xFe_2-yNi_yO₄ (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr³⁺ and Ni²⁺ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 10⁹–1.94 × 10⁹ Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.     

Synthesis,characterization, and visible-light photocatalytic activity of transition metals doped ZTO nanoparticles

Transition metals doping has been proved to be a feasible way for tuning the physical properties on the surface and bulk of nanomaterials and also for the good performance in decontamination of emerging pollutants. In this context, doped samples of zinc tin oxide or zinc stannate nanoparticles (ZTO NPs) by several transition metals were synthesized in order to enhance the optical absorbance with the aims of reducing the band gap and therefore ameliorated their photocatalytic activity. They were characterized by the X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy, Raman spectroscopy and photoluminescence. The XRD patterns and the microscopic observations showed the formation of spherical nanoparticles with an average size of about 30 nm and highly pure ZTO phase with an inverse spinel structure. The Raman spectra were dominated by bands relatives to the F2g (2) and A1g symmetries modes of inverse spinel structure. The band gap Eg is estimated to be 3.75 eV for the undoped sample, and 3.67, 3.64, 3.78 and 3.21 eV, for 2% Fe, 2% Mg, 2% Gd, and 2% Mn doped ZTO samples, respectively.Furthermore, the undoped ZTO NPs have the intrinsic problem of recombination of photogenerated charge carriers. We have shown that the reduction of the band gap and oxygen vacancies resulting from the doping effect could be a useful tool for trapping and avoid the recombination of electrons coming from photosensitized rhodamine B (RhB) under visible light irradiation. Owing to the structural advantages and low band gap, 2% Mn doped ZTO NPs, with the kinetic rate constants k of 0.024 min⁻¹, show enhanced performance for the elimination of RhB in aqueous solution compared to undoped and other doped ZTO NPs.     

2020年电子电路技术热点

文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Charge transport and recombination in heterostructure organic light emitting transistors

Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs.     

ZnIn2S4/In(OH)3 hollow microspheres fabricated by one-step l-cysteine-mediated hydrothermal growth for enhanced hydrogen production and MB degradation

An intervening barrier for photocatalytic water decomposition and pollutant degradation is the frustratingly quick recombination of e⁻ - h⁺ pairs. Delicate design of heterojunction photocatalysts by coupling the semiconductors at nanoscale with well-matched geometrical and electronic alignments is an effective strategy to ameliorate the charge separation. Here a facile and environment-friendly l-cysteine-assisted hydrothermal process under weakly alkaline conditions is demonstrated for the first time to fabricate ZnIn₂S₄/In(OH)₃ hollow microspheres with intimate contact, which are verified by XRD, SEM, (HR)TEM, XPS, N₂ adsorption-desorption, UV–Vis DRS and photoluminescence spectra. ZnIn₂S₄/In(OH)₃ heterostructure (L-cys/Zn²⁺ = 4, molar ratio) with a band-gap of 2.50 eV, demonstrates the best photocatalytic performance for water reduction and MB degradation under visible light, outperforming its counterparts (In(OH)₃ and ZnIn₂S₄). The excellent activity of ZnIn₂S₄/In(OH)₃ heterostructure arises from the intercrossed band-edge positions as well as the unique hollow structure with large surface area and wide pore-size distribution, which are beneficial for the efficient charge migration from bulk to surface as well as at the interface between ZnIn₂S₄ and In(OH)₃. This work provides an efficient and eco-friendly strategy for one-pot synthesis of heterostructured composites with intimate contact for photocatalytic application.     

A Donor–Acceptor Polymer with a Peculiar Negative‐Charge‐“Trapping” Characteristic

Voltammetric and spectrophotometric measurements of poly(3,3″‐dipentoxy‐3′‐dicyanoethenyl‐2,2′:5′,2″‐terthiophene) (polyCN) films, in connection with other experimental evidence, reveal a normal oxidative, but a peculiar reductive behavior consisting of trapping of the negative charge during the cathodic scan. Another interesting property of polyCN films is the tendency to form strong intramolecular and intermolecular associations, probably charge‐transfer (CT) complexes. These properties could account for the fact that the photovoltaic performance does not improve when polyCN is blended with a polythiophene donor.