噻吩在镍基非晶态合金上的吸附和脱附

应用静态吸附、动态吸附、程序升温脱附和程序升温还原等实验方法，考察了噻吩在Ni基非晶态合金上的吸附和脱附行为。常温下，噻吩分子首先吸附在清洁的Ni表面，并立刻被活化，发生氢解反应，C-S键断裂，释放出烃类部分，S留在Ni原子上。噻吩可以在Ni基非晶态合金表面发生强度不同的化学吸附。弱化学吸附的噻吩可以脱附；强化学吸附的噻吩不会脱附，而在高温下发生氢解反应。     

Deposition of CoO onto MoO3/Al2O3 hydrodesulfurization catalysts by solvent assisted spreading

Solvent assisted spreading of CoO over monolayer MoO₃/Al₂O₃ catalysts has been studied. CoCO₃ · Co(OH)₂ and CoCO₃ reacted with MoO₃/Al₂O₃ in water slurries. CoO deposition over MoO₃/Al₂O₃ extrudates was followed by EPMA. In the set of eleven MoO₃/Al₂O₃ catalysts, the amount of CoO adsorbed was roughly proportional to the surface area of MoO₃ monolayer. The adsorbed Co species efficiently enhanced the HDS activity.     

Catalyst’s Sulfur Displacement by Thiophene, as Monitored by Exchange of 35S Radiotracer

The isotopic exchange has been studied between catalyst radiosulfur and H₂S, formed in thiophene hydrodesulfurization (HDS) (named S-displace) on alumina supported molybdena, on CoMoO_x, PdMoO_x, PtMoO_x and on silica–alumina supported NiWO_x. S-displace was compared with radiosulfur exchange data between catalyst radiosulfur and gas phase H₂S (S^exc) determined previously. The extent of S^exc was higher than that of the S-displace for Mo, CoMo in and NiW, whereas the extent of S-displace from PdMoO and PtMoO was significantly higher, than that of S^exc. Thiophene HDS product distribution data are discussed in terms of increased C=C hydrogenation and C–C hydrogenolysis activity, explained by increasing H₂S production with longer circulation time of the thiophene/H₂ mixture, The C₁/C₃<1 ratios among C₄-hydrogenolysis products indicate some coke formation. The decrease of thiophene HDS activity is presumably a consequence of increasing site-blocking with the formation of more H₂S and coke with longer duration of thiophene treatment.     

噻吩类导电高聚物的研究进展

噻吩类聚合物是研究较为广泛的功能高分子材料。详述了通过化学氧化聚合法和电化学氧化聚合法所合成的噻吩类导电聚合物的性能和用途,常用的结构与性能表征方法以及噻吩类导电聚合物在光、电、磁等各种领域中的应用。     

一锅法合成3,4-二甲氧基噻吩

以丁二酮和原甲酸甲酯为原料,合成的2,3-二甲氧基丁二烯不经分离,直接与二氯化硫反应,一锅法成功合成了目标产物3,4-二甲氧基噻吩,总产率达60%。用核磁、红外、紫外等波谱鉴定了目标分子的结构。本法具有反应条件温和,后处理简单,产率高等优点。     

基于荧光多元猝灭响应原理膜传感器测定正己烷中的噻吩

用溶胶 凝胶法制备光纤化学传感器测定正己烷中噻吩的浓度 ,在 1 0 .6～ 2 6 5μg/mL浓度范围内与lg(F0 /F) )成线性 ,相关系数为 0 .9984。检出限为 1 0 .6 μg/mL ,该方法的平均回收率为 1 0 5.0± 7.7%。     

噻吩结构与O_2反应机理的理论研究

为研究煤自燃的反应机理,利用Gaussian 03程序,采用密度泛函理论(DFT)方法,在B3LYP/6-311G水平下研究煤结构中噻吩型有机硫与O2反应机理。由计算结果可知,反应物的初始连接方式有3种,其中Path 1的反应物经过过渡态TS1异构化为中间体IM1是无需克服势垒的放热过程,这说明煤中的噻吩结构无需从外界吸收热量,与氧气接触即可被氧化。此反应主要有6条反应路径,其中,Path 2是反应的主要反应路径,其速控步骤为过渡态TS6,需要克服的势垒为117.06 kJ/mol,其产物P2(C4H4O+SO)是反应的主要产物。     

大孔磺酸树脂催化噻吩类硫化物烷基化反应

考察了NKC-9,CT-175,D005-II和LSI-600四种不同磺酸树脂在噻吩类硫化物和烯烃烷基化反应中的催化性能.结果表明,NKC-9有优于其它树脂的烷基化催化性能,其合适的反应条件为常压、90 ℃和料剂体积比15∶1.在此条件下,硫的转化率高于92.32%,NKC-9对FCC汽油中硫醇向高沸点产物转化也有很好的催化作用.考察了NKC-9的选择性和稳定性,发现它适合催化噻吩类硫化物与C4和C5烯烃的烷基化反应,稳定性好.     

影响CeY分子筛吸附脱硫性能因素的研究

通过液相离子交换法对NaY分子筛进行改性制得CeY分子筛,采用静态法考察了改性CeY分子筛中铈离子的负载量、焙烧温度、铈的价态、吸附水和分子筛骨架的结构对CeY分子筛吸附脱硫性能的影响。采用XRD和ICP分别对不同CeY分子筛的骨架结构及阳离子负载量进行了分析。结果表明,二次交换后,离子交换度达到88.9%,分子筛已达到交换平衡;最佳焙烧温度为500 ℃,温度过高会破坏分子筛的骨架结构;Ce(Ⅳ)Y的脱硫性能明显好于Ce(Ⅲ)Y;分子筛上的吸附水对硫化物的吸附能力也有较大的影响。