不同晶相结构ZrO2负载铜基催化剂用于二乙醇胺脱氢反应

通过制备不同晶相结构〔单斜相(m-ZrO_2)、四方相(t-ZrO_2)和无定型(a-ZrO_2)〕ZrO_2载体,再通过沉积沉淀法制得Cu/m-ZrO_2、Cu/t-ZrO_2和Cu/a-ZrO_2催化剂,分别用于催化二乙醇胺脱氢合成亚氨基二乙酸反应。采用XRD、氮气物理吸附脱附、XPS、H_2-TPR、CO_2-TPD对催化剂的结构进行了表征。结果表明,Cu/m-ZrO_2催化剂界面更加有利于Cu~+/Cu~0稳定存在,具有更多的碱性位点,且抗氧化性较好。在二乙醇胺脱氢反应中,Cu/m-ZrO_2催化剂性能最好,反应时间为2.5 h,亚氨基二乙酸收率为97.64%。     

2.4GHz动态CMOS分频器的设计

对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.     

Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

Monte Carlo simulation of gas phase polymerization of 1,3‐butadiene. Part II: Kinetics optimization and confirmation

Studies on the deactivations and initiations of gas phase polymerizations of 1,3‐butadiene have been achieved by Monte Carlo simulation. Initiation and deactivation control the reaction before and after the peak of the polymerization rate, respectively. The influence of polymerization temperature has been studied. Monte Carlo modeling of polymerization kinetics and mechanism was confirmed by the agreement of experimental data and simulation results of polymerizations run with a temporary evacuation of monomer. The balance of catalysts and active chains is established by both initiation and chain transfer reactions with cocatalyst, which causes a ‘pseudo‐stability’ stage. © 2003 Society of Chemical Industry     

连续波雷达测距中的解模糊技术

研究连续波雷达测距中的距离模糊问题，分析几种常用解模糊方法的性能，并讨论参差比的选取对测距范围的影响。     

机械合金化Fe-Ni粉末的相结构

使用XRD和Moessbauer等方法，研究了在Ar气氛下机械合金化Fe—Ni粉末相结构的变化．结果表明，在机械合金化Fe64-Ni36粉末过程中，fcc相的数量随着球磨时间的增加先增加然后减少，与加乙醇球磨Fe64-Ni36的情形相同．当Ni的含量(原子分数)大于50％时，有fcc相、顺磁相和FeNi3形成，当Ni的含量低于50％时，bcc相的数量随着Ni含量减少而增加．Moessbauer谱的结果表明，因球磨时间或Fe、Ni比例的不同，Fe—Ni球磨粉末固溶体具有不同结构的原子配比。     

带通采样在数据采集中的应用研究

在数据采集中采用带通采样，可大大降低采样率，但系统中的抗混叠滤波器会造成相位的非线性。采用对滤波后的信号进行带通采样，然后再用FRR滤波器校正相位的非线性，从而不失真地还原原信号，最后在Matlab中进行仿真，验证了该方法的有效性。     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.     

Application of annexation principle of thermodynamic property of In-Pb-Sb and In-Bi-Pb melts

Based on the principle of annexation and phase diagrams, the structural units of In-Pb-Sb and In-Bi-Pb melts were determined, and their calculating models of mass action concentrations were formulated. Calculated results agree well with practical values, which in turn show that the models deduced can reflect the structural realities of corresponding melts and the principle of annexation is applicable not only to some binary metallic melts, but also to ternary metallic melts.     

Voltage sag compensation with minimum energy injection by use of a micro‐SMES

This paper presents a method to compensate voltage sags with minimum energy injection for a series‐connected voltage restorer using a micro‐SMES. A circuit for extracting the fundamental symmetrical components from sag voltages and a minimum energy injection algorithm is described. Simulations of voltage sag compensation have been carried out using PSCAD/EMTDC for various faults. The simulation results confirm the validity of the proposed method and show the possibility of reducing the size of energy storage devices. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(3): 70–80, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10047