混沌同步保密通信在TMS320C54x DSKplus板的实现

该文简要介绍了保密通信技术的现状和特点,阐述了混沌同步原理、实现方法及其在保密通信领域中的应用,并对实现混沌同步的TMS320C54x的DSP入门套件(DSK,DSP StarterKit)进行简要说明。然后给出了基于TI公司的DSKplus板的混沌同步语音保密通信系统结构,并对存在的问题进行分析和探讨。     

混浊同步保密通信在TMS320C54×DSPplus板的实现

该文简要介绍了保密通信技术的现状和特点,阐述了混沌同步原理、实现方法及其在保密通信领域中的应用,并对实现混沌同步的TMS320C54x的DSP入门套件(DSK,DSP StarterKit)进行简要说明.然后给出了基于TI公司的DSKplus板的混沌同步语音保密通信系统结构,并对存在的问题进行分析和探讨.     

有源电路和无源电路术语的讨论

本文讨论了理想电路、实际电路中有源电路和无源电路术语的精确含义和受控源的概念,指出理想电路中有源电路和无源电路术语容易引起歧义;举例说明含有有源元件的理想电路既可以是有源电路,也可以是无源电路。笔者提出了对理想电路应使用理想有源电路和理想无源电路术语,对实际电路应使用实际有源电路和实际无源电路术语的观点。     

电路课程工程实例教学探索与研究

电路的工程应用性是电路课程教学的一个显著特点,这就要求电路的教学除了注重电路的基本理论和基本方法之外,应将电路的工程应用放在重要的位置。本文讨论了工程实例电路在电路课程教学中的应用。提出了工程实例电路的选择原则,介绍了工程实例电路的具体教学表现形式和实际应用效果。     

低压低功耗CMOS带隙电压基准及启动电路设计

介绍了一种低压电流模带隙电压基准电路,并提出了一种新颖的启动电路结构.电路采用预先设置电路工作点和反馈控制相结合的方法有效地克服了第三简并点的问题,从而保证电路能够正常工作.文中给出详细的分析和电路实现,并给出了一种电路简并点和启动裕度分析的SPICE仿真方法.电路采用0.25μm CM0S工艺设计并流片.最后对电路的测试结果进行了比较和分析.     

低压低功耗CMOS带隙电压基准及启动电路设计

介绍了一种低压电流模带隙电压基准电路,并提出了一种新颖的启动电路结构.电路采用预先设置电路工作点和反馈控制相结合的方法有效地克服了第三简并点的问题,从而保证电路能够正常工作.文中给出详细的分析和电路实现,并给出了一种电路简并点和启动裕度分析的SPICE仿真方法.电路采用0.25μm CM0S工艺设计并流片.最后对电路的测试结果进行了比较和分析.     

数据采集系统的通道电路设计

该文详细阐述了数据采集系统通道电路的设计。重点论述了通道电路的设计方案,并对通道电路的放大电路、垂直偏移调节电路、增益调节电路,以及放大电路的稳定性和级间匹配进行了分析。     

AlGaN紫外探测器读出电路研究

设计了一款AlGaN 320×256规模紫外探测器专用读出电路.该款读出电路属于数模混合电路,其中模拟信号处理电路包含积分放大电路、采样保持电路、缓冲器及输出驱动电路,数字逻辑控制电路实现了多种用户可配置的功能.给出了理论分析和电路模拟仿真的结果数据及波形.采用标准0.35μm 2P3M CMOS工艺设计了电路版图,最终版图面积为ll.8mm×11.1mm,并对流片后的读出电路进行了主要参数的测试和数据分析,验证了该读出电路的功能.     

一种机载直流浪涌抑制器的设计

研究了机载28 V直流供电系统浪涌电压对DC/DC电源的危害,对影响浪涌抑制电路的各种因素进行了探讨.提出了尖峰抑制电路、过压浪涌抑制电路和欠压浪涌抑制电路的设计方案,并将过压浪涌电路和欠压浪涌电路结合起来.基于以上方法,较全面地评估了电路在启动过程中存在的问题,并设计了滞环比较器.采用提出的方案,设计了一个实验电路.仿真和实验电路测试结果均表明,设计的电路满足使用要求.     

压电变压器外围电路的最新研究进展

压电变压器的外围电路也应突出无电磁污染、易小型化等特点,详细介绍了外围驱动电路和反馈控制电路。列举并分析了不同驱动电路和反馈控制电路的设计原理和工作特点,并对未来外围电路的发展做了简单的预测。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.