一种XeF2对硅的脉冲自发刻蚀

XeF2不需要任何电离作用,与硅可发生自发反应,可用作对硅各向同性干法刻蚀.研制了一个使用脉冲法对二氧化硅/硅体系进行XeF2刻蚀的系统,利用该系统实现了高SiO2/Si、光刻胶/Si刻蚀选择比之硅刻蚀,并对刻蚀速率与刻蚀压强、刻蚀表面粗糙度与刻蚀深度之间的关系进行实验研究.     

干法刻蚀制作场发射阴极阵列

利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。本文描述了其制作的流程工艺,并对制作中的一些关键问题和技术进行了讨论。采用SF6作为反应气体的RIE用来制作硅尖,而用CF4 H2为反应气体的RIE用来清除SiO2,离子束刻蚀用来形成栅极。采用干法刻蚀,可以制造出栅极开口小的场发射阴极阵列。     

CF_4流量及射频功率等对反应离子刻蚀硅基材料的影响

通过一系列的刻蚀实验,研究了在反应离子刻蚀(RIE)过程中,CF4流量及射频功率等工艺参数对刻蚀硅基材料的影响,采用不同工艺条件,得出了对应的刻蚀速率、均匀性、选择比等刻蚀参数,并对结果进行了比较与分析,得到了相对最佳的工艺条件,能较好地实现硅的各向异性刻蚀,为硅基材料刻蚀技术在半导体工艺中的应用做了一定的实验探索。     

集成光学陀螺环形谐振腔的优化设计与制备

利用广角有限差分光束传播法(WA-BPM)对集成光学陀螺(10G)用掺锗的二氧化硅光波导环形谐振腔进行了优化设计,详细分析了谐振腔的主要性能参数精细度F与各种损耗及光强耦合系数的关系. 在优化设计基础上,在硅基底上利用等离子体增强型化学汽相沉积(PECVD)法与反应离子刻蚀(RIE)制作了掺锗的SiO2光波导环形谐振腔.经测试,在1 550 nm波长处,光波导传输损耗为0.02 dB/cm,环形谐振腔内总传输损耗仅为0.1 dB/circuit,可为今后集成光学陀螺的小型化和高灵敏度提供理论参考.     

感应耦合等离子刻蚀InP工艺

采用Cl2/CH4/N2感应耦合等离子体对InP进行了刻蚀.系统地讨论了RF功率、ICP功率、反应腔压力、气体流量等工艺参数对InP材料端面刻蚀的影响.通过优化工艺参数,获得了光滑垂直的InP刻蚀端面,刻蚀速率达到841 nm/min,与SiO2的选择比达到15:1.     

硅量子线的研究

利用常规硅工艺的反应离子刻蚀、各向异性化学腐蚀、热氧化和超低压ＣＶＤ生长技术，成功地硅单晶衬底上制作了硅／二氧化硅异质界面结构超精细硅量子线。本项研究结果对开展低维量子结构物理及硅量子器件的研究具有十分重要的意义。     

软膜紫外光固化纳米压印中Amonil光刻胶的刻蚀参数优化(英文)

报道了反应离子刻蚀转移图形过程中对Amonil光刻胶的刻蚀参数优化的结果.利用软膜紫外光固化纳米压印技术,首先制备了线宽/间距均为200 nm的纳米光栅结构.然后采用反应离子刻蚀的方法去除残留的Amonil光刻胶.研究了不同的气体组成、射频功率、压强和气体流量对刻蚀形貌、表面粗糙度以及刻蚀速度的影响.在优化的工艺条件下,获得了理想的具有垂直侧壁形貌和较小表面粗糙度的纳米光栅阵列.结果表明,选择优化的刻蚀工艺参数,既能有效地改善图形转移的性能,同时也能提高所制备结构的光学应用特性.     

基于多掩膜光刻工艺的MEMS体硅加工

本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底刻蚀或腐蚀,刻蚀或腐蚀完毕后去除该层掩膜。该工艺解决了MEMS工艺中的深坑涂胶和光刻问题,结合深反应离子刻蚀(Deep Re-active Ion Etching,DR IE)、湿法腐蚀等工艺可以用于多级台阶、深坑底部精细结构、微结构释放等MEMS工艺。     

HfO2薄膜的反应离子刻蚀特性研究

研究了HfO2薄膜在CHF3/Ar和SF6/Ar等气体中的反应离子刻蚀机理.结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响,而气体流量影响不大.CHF3和SF6与HfO2的反应产物具有较好的挥发性,Ar的引入不仅可以打破分子之间的键合促进刻蚀产物的形成,而且通过轰击加快产物从材料表面解吸,从而提高HfO2刻蚀速率.AFM测量结果表明刻蚀降低了HfO2表面粗糙度,显示刻蚀工艺对材料的低损伤.     

纳米硅微晶对于Er离子掺杂的SiO_2薄膜的光致发光和电致发光的不同影响

本文利用Er和硅离子共注入热氧化SiO2薄膜的方法制备出Er离子掺杂的含纳米硅微晶的SiO2发光薄膜,在此基础上制备出ITO/SiON/Si-rich SiO2:Er/Si MOS结构电致发光器件,比较研究了硅微晶密度的变化对于MOS结构的电致发光和光致发光特性的影响。随着纳米硅微晶的增多,Er离子在1.54μm处的红外光致发光显著增强,显示出纳米硅微晶对Er离子光致发光的敏化作用。相反,对于电致发光来说,增加纳米硅微晶数量的同时也增加了SiO2薄膜中的电子俘获陷阱,电子在纳米硅微晶之间的隧穿降低了过热电子的数量和平均能量,因而降低了碰撞激发Er离子产生的电致发光效率。     

类金刚石薄膜的反应离子刻蚀

为了刻蚀出图形完整、侧壁陡直、失真度小、独立的类金刚石薄膜微器件,反应离子刻蚀是一种有效地刻蚀方法。研究了氧气与氩气的混合气体进行类金刚石薄膜刻蚀的主要工艺参数(刻蚀时间、有无掩膜、氩氧体积混合比、负偏压)。研究结果表明:在相同条件下,刻蚀速率随刻蚀时间变化不大;有无掩膜对刻蚀速率无明显影响;流量一定时,刻蚀速率随氩氧体积比的增大而降低,随负偏压的增大先增大后减小。实验得到最佳刻蚀条件,在此条件下,刻蚀出图形完整、侧壁陡直、失真度小的微器件,并成功制备出"独立"的微齿轮,进行了组装。     

The fabrication of metal silicide nanodot arrays using localized ion implantation

We propose a process for fabricating nanodot arrays with a pitch size of less than 25?nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).     

Fabrication of moth eye structures via charged nanoparticle lithography with size and density control

We have developed and demonstrated an effective method for fabricating the moth eye structures formed by charged nanoparticle lithography (cNPL). We attached high-density gold nanoparticles (Au NPs) to GaN without aggregation by making the surface of Au NPs negatively charged and GaN positively charged. Au NPs were effectively used as an etching mask, and the moth eye structures of GaN were formed by inductively coupled plasma reactive ion etching. The moth eye structures with various sizes and densities were fabricated by the cNPL, and the moth eye structures reduced the reflectance. The cNPL, as a simple technique with size and density control, will provide high potential to optical device applications.     

Enhanced wet etching of patterned GaN with ion implantation

We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion fluence, and the etching depth could exceed the project range of incident 500 keV Au+ ion. The etch pits could be observed at the bottom of the etched area. The -400 nm depth etching could be achieved with high fluence implantation after a long etching time, and the edge of etched area could remain clear until the etching process had passed 40 min. As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect. -70 nm wave of the GaN surface was observed. The results of our experiments may suggest an approach to the fabricating of GaN devices.     

热压印刻蚀技术

纳米压印技术是一种高分辨率、廉价、高效的纳米结构制备技术。它既继承了传统光刻技术所具有的并行性,又同时拥有传统光刻技术不易达到的纳米结构制备能力,这为今后纳米结构的广泛应用提供了良好的条件。文章介绍了纳米热压印技术中核心工艺流程,包括：模板的制备、抗粘层的制备、压印过程中温度与压力的影响、反应离子刻蚀,并且给出了利用纳米热压印技术制备的光栅结构,最后展望了纳米压印技术的前景。     

侧壁压阻式力传感器的研制与标定

在对现有微操作中夹持力问题进行分析的基础上,提出了一种基于面内侧壁压阻的力传感器加工方法,成功地在MEMS微夹持器上集成了压阻式的力检测传感器,对夹持力的检测反馈实现了微操作的闭环控制.该方法利用离子注入工艺和深度反应离子刻蚀（DRIE）工艺相结合制作检测梁侧壁压阻,改善了侧壁压阻工艺与其他工艺间的兼容性问题.最后通过压电叠堆驱动平台结合精密电子秤对压阻传感器进行了标定.测试表明,这种微力传感器加工技术可以很好地与其他工艺相兼容,力传感器的灵敏度优于72V/N,分辨率优于3μN.     

Regular arrays of monodisperse platinum/erbium disilicide core-shell nanowires and nanoparticles on Si(001) via a self-assembled template

We have developed a process for fabricating monodisperse noble metal/rare earth disilicide core-shell nanoparticles and nanowires in regular arrays on Si(001) with a density of 5 x 10(10) / cm2, and over areas > 1 mm2. Pt deposited via physical vapor deposition on a self-assembled rare earth disilicide nanowire template combined with reactive ion etching produces arrays of nanostructures. SEM images demonstrate the ability to select nanowires or nanoparticles as a function of Pt coverage. Statistical analysis of images of Pt nanoparticle arrays yield a mean feature size of 8 nm with a size variation of +/- 0.9 nm and interparticle spacing of approximately 15 nm.     

反应离子刻蚀工艺因素研究

通过大量的实验研究，介绍了反应离子刻蚀的原理，分析了不同材料反应离子刻蚀的机理和关键的工艺因素，给出了工艺参数结果。     

Fabrication and characterization of plasmonic nanorods with high aspect ratios

Metallic nanostructures with high aspect ratios are important for developing devices in photonics and integrated optics. However, fabricating well-aligned plasmonic arrays is challenging due to the difficulties of etching metals. In this work, we investigate the feasibility of constructing high aspect ratio nanorods with desired shapes and controllable geometric parameters using direct focused ion beam etching. The whole fabrication process only involves a metal-deposition step and a single milling of designed patterns. Detailed characterizations of the fabricated devices are also experimentally demonstrated.     

Submicron dry-etching behavior of β-FeSi2 thin films towards fabrication of photonic crystals

We have investigated dry-etching properties of polycrystalline β-FeSi₂ films formed by ion-beam sputter-deposition (IBSD) and the films epitaxially grown on Si by metal organic chemical vapor deposition (MOCVD) in order to realize fabrication of photonic crystals with several hundreds nanometers in dimension. Using reactive ion etching with magnetic neutral loop discharge (NLD) plasma, we succeeded in realizing a comparatively higher etching rate than that obtained by inductively coupled plasma (ICP). Both reactive ion etching and impact ion etching modes may contribute to etching of β-FeSi₂. We have fabricated a two-dimensional photonic crystal of β-FeSi₂ on Si substrates and confirmed its predicted photonic properties in a reflectance spectrum of polarized light.