永磁同步电机直接转矩控制系统的仿真研究

文章分析了永磁同步电机直接转矩控制的原理,阐述传统直接转矩控制系统转矩脉动的缺点,本文将空间矢量脉宽调制技术引入永磁同步电机的直接转矩控制系统中,利用空间矢量的调制过程,可在相同的系统硬件条件下得到更多的、连续的电压空间矢量,进而得到对电机更准确的控制。仿真结果表明,该方案既保持了直接转矩控制快速动态响应,又减小了电机转矩的脉动。     

基于SVPWM的永磁同步电机直接转矩控制系统的建模与仿真

文章介绍了永磁同步电机直接转矩控制的原理,分析了传统直接转矩控制系统转矩脉动的缺点,并且将空间矢量脉宽调制技术引入永磁同步电机的直接转矩控制系统中,利用空间矢量的调制过程,可在相同的系统硬件条件下得到更多的、连续的电压空间矢量,进而得到对电机更准确的控制。仿真结果表明,该方案既保持了直接转矩控制快速动态响应,又减小了电机转矩的脉动。     

基于空间矢量调制的PMSM直接转矩控制研究

针对传统的直接转矩控制（DTC）出现的开关频率不恒定,磁链和转矩脉动大的问题,提出一种基于空间矢量调制的直接转矩控制（SVM-DTC）方法。该方法集合了直接转矩控制响应快、矢量控制连续平滑的优点,以永磁同步电机（PMSM）数学模型为基础,建立转矩、磁链双闭环PI控制回路。采用空间电压矢量调制策略,将转矩和磁链作为控制量。仿真结果表明,相对于传统的直接转矩控制,基于空间矢量调制的直接转矩控制方案的开关频率恒定,转矩、磁链脉动小,系统具有良好的动、静态性能,验证了该方法的可行性和有效性。     

基于TMS320LF2407的永磁同步电机直接转矩控制

直接转矩控制是一种高性能的电机控制方法,它根据磁通和转矩的要求,直接选择逆变器的开头顺序,使电机在最佳状态下运行。本文提出了一套基于TMS320LF2407DSP的永磁同步电机直接转矩控制系统的设计方案,介绍了其硬件结构、控制策略及软件设计,并建立永磁同步电机的数学模型,计算出定子电压、磁链、转矩方程。在此基础上,通过仿真实验分析比较了基本电压矢量直接转矩控制和矢量细分直接转矩控制的原理,实验结果表明该方案合理、结构通用,能够满足系统的各项要求指标。     

基于MRAS的永磁同步电机直接转矩控制系统的研究

研究了一种基于模型参考自适应无速度传感器的永磁同步电机直接转矩控制系统:将永磁同步电机的磁链模型作为参考模型,估算的定子磁链模型作为可调模型,设计了自适应定律对电机的转速与定子电阻同时进行跟踪辨识,使用空间电压矢量调制技术组成了永磁同步电机无速度传感器直接转矩控制系统。仿真实验结果表明该系统获得了近似圆形的定子磁链,在转速与转矩变化时均能准确的估算出电机转速,具有良好的动、静态性能。     

基于滑模控制的永磁同步电机直接转矩控制研究

针对永磁同步电机直接转矩控制(DTC)存在较大的电磁转矩脉动、磁链脉动、低速性能不理想等问题,文中引入滑模控制策略对永磁同步电机进行直接转矩控制。通过建立PMSM的矢量数学模型,设计基于滑模控制的直接转矩控制器,利用MATLAB/Simulink进行建模仿真分析。结果表明,与传统DTC相比,基于滑模控制策略的永磁同步电机直接转矩控制系统中电磁转矩脉动幅值更低,且具有更好的动态性能和抗扰动能力,可以更加有效地改善系统特性,满足实际电机控制的需要。     

一种新型永磁同步电动机的直接转矩控制方法

基于永磁同步电动机的转矩和磁链方程，介绍了一种改进的直接转矩控制方法。在该控制方法中，引入了一种新的电压空间矢量调制技术，这种调制技术的特点是把电动机的转速作为开关表的一个输入量，实现了定子电压空间矢量的精确选择，有效的降低了转矩、定子磁链和定子电流的波动。仿真实验结果验证了这种控制方法的有效性。     

内置式永磁同步电机直接转矩控制的仿真研究

在永磁同步电机直接转矩控制系统的基础上,分析了内置式永磁同步电机的最大转矩电流比动态磁链控制。设计了基于SVPWM的磁链给定的直接转矩控制系统,通过电压空间矢量连续调节,减小了直接转矩中转矩脉动。在MATLAB/SIMULINK仿真模型下,对该系统进行仿真,验证控制系统的有效性。     

基于SVPWM的永磁同步电机直接转矩控制系统的研究

将空间矢量脉宽调制技术(SVPWM)引入到了永磁同步电机的直接转矩控制(DTC)当中,实现了电压空间矢量的连续调节。定子磁链近似为圆形,有效地解决了常规DTC系统电磁转矩脉动较大的问题。在MATLAB/Simulink环境下搭建了永磁同步电机基于SVPWM的直接转矩控制系统的模型,对电机的多种运行状态进行了仿真,验证了控制理论的正确性和有效性。     

基于扩展滑膜控制器的PMSM无速度传感器研究

本文设计了一种基于永磁同步电机（PMSM）直接转矩控制（DTC）的扩展滑膜观测器,通过测量定子电压与电流,获得电机的转速和转子位置。MATLAB仿真结果表明,扩展的滑膜观测器在空间矢量电压直接转矩控制（SVPWM-DTC）中,所得转速更接近实际转速。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.