高电流截止频率GaInP／GaAs HBT

本文简要介绍了ＧａＩｎＰ／ＧａＡｓ ＨＢＴ的发展现状，用湿法工艺制作了自对准ＧａＩｎＰ／ＧａＡｓ ＨＢＴ，其电流截止频率高达５０ＧＨＺ，性能优于我们在同等工艺条件下制作的ＡｌＧａＡｓ／ＧａＡｓＨＢＰ。     

四元系AlGaInP为发射极异质结双极晶体管研究

本文对ＡｌＧａＩｎＰ／ＧａＡｓ异质结双极晶体管（ＨＢＴ）进行了研究．设计并制备了ＡｌＧａＩｎＰ为发射极的叉指结构ＨＢＴ器件．研究结果表明,ＡｌＧａＩｎＰ／ＧａＡｓＨＢＴ具有较高的电流增益和较好的温度特性．同时,由于对ＡｌＧａＩｎＰ和ＧａＡｓ腐蚀选择性大,因而工艺简单、重复性好．     

30～40GHz单片压控振荡器

３０～４０ＧＨｚ单片压控振荡器据《ＩＥＥＥＭｉｃｒｏｗａｖｅａｎｄＧｕｉｄｅｄＷａｖｅＬｅｔｔ．》第４卷第８期报道，Ｋ．Ｒｉｅｐｅ等用高速ＧａｌｎＰ／ＧａＡｓＨＢＴ研制成一种３０～４０ＧＨｚ的单片压控振荡器（ＶＣＯ）。该ＶＣＯ的设计采用共射极ＨＢＴ组...     

GaInP／CaAs／CaInP双异质结双极晶体管在室温下的谐振隧道效应研究

ＧａＩｎＰ／ＣａＡｓ／ＣａＩｎＰ双异质结双极晶体管在室温下的谐振隧道效应研究＝ＯｂｓｅｒｖａｔｉｏｎｏｆｒｅｓｏｎａｎｔｔｕｎｎｅｌｉｎｇａｔｒｏｏｍｔｅｍｐｅｒａｔｕｒｅｉｎＧａＩｎＰ／ＧａＡｓ／ＧａＩｎＰｄｏｕｂｌｅ－ｈｅｔｅｒｏｊｕｎｃｔｉｏｎ...     

重掺碳基区GaInP／GaAs异质结双极晶体管初探

重掺碳基区ＧａＩｎＰ／ＧａＡｓ异质结双极晶体管初探严北平，潘静，蔡克理，章其麟，罗晋生（西安交通大学电子工程系，７１００４９）（河北半导体研究所，石家庄，０５００５１）ＡＳｔｕｄｙｏｆＧａＩｎＰ／ＧａＡｓ－ＨＢＴｗｉｔｈａＨｅａｖｉｌｙＣ－ｄｏｐｅｄ...     

C波段GaAs FET VCO设计的一种方法

在小信号Ｓ参数基础上，提出了一种宽带优化方法，设计了宽调谐、低相噪ＧａＡｓＦＥＴＶＣＯ。用该方法设计的Ｃ波段ＧａＡｓＦＥＴＶＣＯ用变容二级管调谐，其电压调谐范围在０～１５Ｖ，在调谐带宽为５００ＭＨｚ范围内ＶＣＯ的调谐线性度为１：１．５，带内相位噪声优于－８２ｄＢｃ（偏离１００ｋＨｚ处）输出功率大于２０ｍＷ，功率起伏小于±１ｄＢ。     

最高振荡频率为46 GHz的GaInP／GaAs异质结双极晶体管

最高振荡频率为４６　ＧＨｚ的ＧａＩｎＰ／ＧａＡｓ异质结双极晶体管钱峰，陈新宇，肖秀红，姚晓峨，周天舒，潘菁，陈效建（南京电子器件研究所，２１００１６）齐鸣，李爱珍（中科院上海冶金所，２０００５０）Ａｆ＿（ｍａｘ）＝４６ＧＨｚＧａＩｎＰ／ＧａＡｓＨＢＴ...     

X波段输出功率2W GaInP／GaAsHBT

Ｘ波段输出功率２Ｗ　ＧａＩｎＰ／ＧａＡｓＨＢＴ据（（Ｍｉｃｒｏｗａｖ＆ＲＦ））１９９４年第４期报道，ＡＩＧａＡｓ是ＧａＡｓ为基底的ＨＢＴ发射区选用的材料。而ＧａｌｎＰ发射区具有以下特性：最高振荡频率超过１００ＧＨｚ，大于１００的高电流增益。据报道，已...     

MOCVD和GSMBE生长Ga_（0．5）In_（0．5）P外延层中有序结构的研究

用ＭＯＣＶＤ在（１００）、ＧＳＭＢＥ在（１００）和（１１１）ＢＧａＡｓ上生长了ＧａＩｎＰ外延层．ＰＬ测试表明，（１００）衬底上ＧａＩｎＰＰＬ峰的能量比计算的带隙分别小４３（ＧＳＭＢＥ生长）和１０４ｍｅＶ（ＭＯＣＶＤ生长）．用Ｋｕｒｔｚ等人的模型对ＭＯＣＶＤ和ＧＳＭＢＥ生长的ＧａＩｎＰ中有序度的不同进行了解释．并讨论了衬底晶向对ＧａＩｎＰ中有序程度的影响．     

富士通研究所开发3．5V GaAs HBT

富士通研究所开发３．５ＶＧａＡｓＨＢＴ日本富士通研究所已研制成作为新一代便携电话的３．５ＶＧａＡｓ异质结双极晶体管（ＨＢＴ）和新结构ＨＢＴ。ＧａＡｓＨＢＴ具有与用于便携电话的发射部分的ＧａＡｓＦＥＴ相比，芯片面积减少１／２，大功率增益和单一电源工作等...     

4.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCO

The low-phase-noise GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using transformer-based superharmonic coupling topology is demonstrated for the first time. The fully integrated QVCO at 4.87GHz has phase noise of -131dBc/Hz at 1-MHz offset frequency, output power of -4dBm and the figure of merit (FOM) -198dBc/Hz. The state-of-the-art phase noise FOM is attributed to the superior GaInP/GaAs HBT low-frequency device noise and the high quality transformer formed on the GaAs semi-insulating substrate.     

Balanced Colpitt oscillator MMICs designed for ultra-low phase noise

Balanced voltage-controlled oscillator (VCO) monolithic microwave integrated circuits (MMICs) based on a coupled Colpitt topology with a fully integrated tank are presented utilizing SiGe heterojunction bipolar transistor (HBT) and InGaP/GaAs HBT technologies. Minimum phase noise is obtained for all designs by optimization of the tank circuit including the varactor, maximizing the tank amplitude, and designing the VCO for Class C operation. Fundamental and second harmonic VCOs are evaluated. A minimum phase noise of less than -112 dBc at an output power of 5.5 dBm is achieved at 100-kHz carrier offset and 6.4-GHz oscillation frequency for the fundamental InGaP/GaAs HBT VCO. The second harmonic VCO achieves a minimum measured phase noise of -120 dBc at 100 kHz at 13 GHz. To our best knowledge, this is the lowest reported phase noise to date for a varactor-based VCO with a fully integrated tank. The fundamental frequency SiGe HBT oscillator achieves a phase noise of -108 dBc at 100 kHz at 5 GHz. All MMICs are fabricated in commercial foundry MMIC processes.     

Low noise 5 GHz differential VCO using InGaP/GaAs HBT technology

The authors present the first InGaP/GaAs HBT differential VCOs with low phase noise performance. One is a cross coupled differential VCO, and the other is a Colpitts differential VCO. To achieve a fully integrated VCO, collector-base junction capacitance of HBT transistor is used for the frequency tuning varactor. The measured output frequency ranges of VCOs are 290 MHz and 190 MHz, and the phase noises at an offset frequency of 1 MHz are -118 dBc/Hz and -117 dBc/Hz respectively. The each VCO core dissipates 13.2 mW from a 3.5 V supply, and the output power is about -0.2 dBm. Concerned with cross coupled VCO, it shows the figure of merit of -179 dBc/Hz, which is the best result among the reported compound semiconductor FET and HBT VCOs.     

A 17-GHz Push–Push VCO Based on Output Extraction From a Capacitive Common Node in GaInP/GaAs HBT Technology

This paper presents a new push-push voltage-controlled oscillator (VCO) technique that extracts a second harmonic output signal from a capacitive common node in a negative-g_m oscillator topology. The generation of the second harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing: 1) significant voltage clipping and 2) different rise and fall times during the switching operation of the core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region than a conventional push-push technique using an emitter common node. A prototype 17-GHz VCO realized in GaInP/GaAs HBT technology produces an output power of -6dBm and a phase noise of -110.4dBc/Hz at 1-MHz offset, which is equivalent to a VCO figure-of-merit of -184.3dBc/Hz, while drawing 4.38 mA from a 3.0-V supply     

A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback /spl pi/-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33GHz and 25.75GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained.     

低电调电压全集成10~20GHz VCO的设计与实现

研制了一款低电调电压、多频段压控振荡器(VCO)微波单片集成电路(MMIC),MMIC主要由6频段振荡电路、控制电路、译码电路等组成。将10~20 GHz的频率范围分为6个频段覆盖,从而将电调电压控制在5 V以内。基于GaAs异质结双极晶体管(HBT) 2μm工艺对所设计的VCO进行了流片验证,芯片面积为3.4 mm×3.2 mm。测试结果表明,在室温下,当电源电压为5 V、电调电压在0~5 V时,每个频段VCO可覆盖的频率为9.58~11.6 GHz、11.06~13.23 GHz、12.77~14.89 GHz、14.21~16.48 GHz、16~18.48 GHz和17.7~20.17 GHz;当电调电压为2.5 V、频偏为100 kHz时,每个频段VCO的相位噪声分别为-91.8、-90.5、-90.3、-90、-88.2和-87.1 dBc/Hz。因此,该6频段VCO覆盖了10~20 GHz的频率范围,且每段VCO的相位噪声指标良好,可满足低压电子系统的应用需求。     

一种Ku波段宽调谐范围高输出功率的InGaP/GaAs HBT VCO

本文介绍了一种采用InGaP/GaAs HBT工艺实现的全集成应用于Ku波段的压控振荡器(VCO)。该VCO采用Colpitts结构,以达到宽调谐范围,并且该VCO取得了较高的输出射频功率。测试结果表明：该VCO的振荡频率为12.82 GHz～14.97 GHz,调谐范围为15.47%,输出射频功率为0.31 dBm～6.46 dBm,在载频13.9 GHz处相位噪声为-94.9 dBc/Hz@1 MHz。在5 V单电源直流偏置下该VCO的功耗为52.75 mW,其芯片尺寸为0.81 mm×0.78 mm。最后,本文对VCO的品质因数FOM指标进行了讨论。     

A K-band InGaP/GaAs HBT balanced MMIC VCO

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.     

面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器

介绍了一种由商用InGaP/GaAs异质结双极晶体管工艺制成、基于负阻原理的单片压控振荡器,此电路定位于5GHz频段下的无线应用.在实际使用中,除了旁路和去耦电容外,无需外接其他外部元件.测试得到的输出频率范围超过300MHz,为4.17～4.56GHz,与仿真结果非常吻合;相位噪声为-112dBc/Hz@1MHz;在3.3V电源电压下,其核心部分的直流功耗为15.5mW,输出功率为0～2dBm.为了与其他振荡器比较,还通过计算得到了相位噪声优值,约为-173.2dBc/Hz.同时,还讨论了负阻振荡器的原理和设计方法.     

面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器

介绍了一种由商用InGaP/GaAs异质结双极晶体管工艺制成、基于负阻原理的单片压控振荡器,此电路定位于5GHz频段下的无线应用.在实际使用中,除了旁路和去耦电容外,无需外接其他外部元件.测试得到的输出频率范围超过300MHz,为4.17～4.56GHz,与仿真结果非常吻合;相位噪声为-112dBc/Hz@1MHz;在3.3V电源电压下,其核心部分的直流功耗为15.5mW,输出功率为0～2dBm.为了与其他振荡器比较,还通过计算得到了相位噪声优值,约为-173.2dBc/Hz.同时,还讨论了负阻振荡器的原理和设计方法.