共查询到18条相似文献,搜索用时 187 毫秒
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采用石英钟罩式微波等离子体化学气相沉积(MWPCVD)设备制备了大面积金刚石薄膜,结合X射线衍射谱(XRD)、扫描电子显微镜(SEM)和激光喇曼(Raman)谱等实验手段,较系统地研究了衬底位置对金刚石薄膜质量的影响规律.结果表明,在等离子体球内部的空间范围内,距等离子体球中心垂直距离越远衬底上所沉积的金刚石薄膜质量越好;通过调整衬底位置,可明显改善其上不同区域所沉积的金刚石薄膜质量,最后在等离子体球边缘附近可沉积出晶粒均匀一致几乎不舍非晶碳的大面积高质量金刚石薄膜.此研究为进一步改善大面积金刚石薄膜均匀性和薄膜质量提供了一种实用的途径. 相似文献
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金刚石基底上制备(002)AlN薄膜的研究 总被引:1,自引:1,他引:0
首先采用微波等离子体化学气相沉积(MPCVD)方法,在O2/H2/CH4混合气体气氛下利用大功率微波在(100)Si片上生长出了异质外延金刚石膜,X-射线衍射(XRD)、拉曼光谱和场发射扫描电子显微镜(FESEM)对薄膜的表征分析结果表明,制备的金刚石膜具有很高的金刚石相纯度,且晶粒排列紧密;继而采用射频磁控反应溅射法,在抛光的金刚石基底上成功制备了高C轴择优取向的氮化铝(AlN)薄膜,研究了不同的溅射气压、靶基距对AlN薄膜制备的影响,XRD检测结果表明,溅射气压低,靶基距短,有利于AlN(002)面择优取向,相反则更有利于AlN薄膜的(103)面和(102)面择优取向;研究了AlN薄膜在以N终止的金刚石基底和纯净金刚石基底两种表面状态上的生长机制,结果发现,以N终止的金刚石基底非常有利于AlN(002)面择优取向生长;从Al-N化学键的形成以及溅射粒子平均自由程的角度,探讨了其对AlN薄膜择优取向的影响。 相似文献
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采用热丝化学气相沉积(CVD)法制备了自支撑金刚石膜,再通过射频磁控溅射法沉积氧化锌薄膜在自支撑金刚石膜上。通过光学显微镜、扫描电镜(SEM)以及原子力显微镜(AFM)测试自支撑金刚石膜的表面形貌,结果表明,自支撑金刚石膜的成核面非常光滑,粗糙度约为10 nm;拉曼光谱显示成核面在1 333 cm-1附近有尖锐的散射峰,与金刚石的sp3键相对应,非金刚石相含量很少;X-射线衍射分析(XRD)显示,沉积在自支撑金刚石膜上的氧化锌薄膜为高度的c轴择优取向生长。 相似文献
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采用直流磁控溅射法,在光学玻璃衬底上沉积类金刚石(DLC)和掺N类金刚石薄膜(DLC:N)。用喇曼光谱、X射线光电子能谱(XPS)、傅里叶红外光谱(FTIR)等研究分析了所制备薄膜的微观结构。喇曼光谱的结果表明,掺N类金刚石膜仍具有典型的类金刚石膜结构,在类金刚石薄膜中掺N不仅有助于提高膜中sp3/sp2的比例,而且还能阻止sp2键向石墨相的转化,稳定并优化薄膜的类金刚石属性。FTIR表明,薄膜中N与C原子形成了C—N、CN及C≡N等键合方式。XPS谱表明,掺N类金刚石膜中除了C和N元素外,还出现了少量的O元素,而C1s和N1s的解谱显示,掺N后的类金刚石膜中的C、N结合能发生了明显的移动,由计算得出薄膜中N的含量为13.5%。薄膜的表面形貌图(AFM)表明,在类金刚石薄膜中掺N能够改善其表面形貌。 相似文献
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采用磁激励射频等离子体增强化学气相沉积(M-RF-PECVD)方法,室温下分别在玻璃和Si(100)衬底上制备类金刚石(DLC)薄膜,通过扫描电镜(SEM)、傅里叶红外光谱(FTIR)和Raman光谱对不同沉积条件下制备的薄膜进行表征。结果表明,在反应压强为30 Pa、入射功率为50 W、CH4/Ar=5/90、衬底温度为40℃的实验条件下,制备的含氢DLC薄膜表面平整、结构致密,膜基结合度良好,薄膜中以sp3键为主。 相似文献
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脉冲激光沉积类金刚石膜技术 总被引:2,自引:0,他引:2
脉冲激光沉积(PLD)技术制备类金刚石(DLC)薄膜存在着金刚石相含量较低、石墨颗粒多、薄膜与衬底附着力差、膜内应力大等技术难题,为此,研究人员研究出了多种技术措施,如通过引入背景气体、超快激光、偏压、磁场以及加热等措施提高了薄膜金刚石相含量;采用金刚石或丙酮靶材、减小单脉冲能量等措施减少了石墨颗粒;采用间歇沉积、真空退火、超快激光等措施减少了膜内应力;合理没计过渡层改善了膜与衬底间的附着力等.这些技术有力地推动了脉冲激光沉积技术的发展. 相似文献
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用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7 Torr)下硅片上金刚石膜的成核和生长.成核过程中采用2.5%的CH4浓度,在经充分超声波预处理的硅片上获得了高达1.5×1011cm-2的成核密度.随CH4浓度的增加所成膜中的金刚石晶粒尺寸由亚微米转变到纳米级.成功合成了表面粗糙度小于4nm、超薄(厚度小于500nm)和晶粒尺寸小于50nm的纳米金刚石膜.膜与衬底结合牢固.膜从可见光至红外的光吸收系数小于2×104cm-1.用我们常规的HFCVD技术,在低温度和低压下可以生长出表面光滑超薄的纳米金刚石膜. 相似文献
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In this paper, we discuss the simulation of the chemical vapor deposition (CVD) of diamond films on the molecular scale. These
simulations are performed using a kinetic Monte Carlo method that combines the surface chemistry that is important to diamond
growth with an atomic-scale picture of the diamond surface and its evolving atomic structure and morphology. We address the
determination of surface reaction kinetics and growth conditions from experiments and reactor-scale models, and the prediction
of polycrystalline film texture and morphology from the molecular-scale results. The growth rates and the concentrations of
incorporated point defects as a function of substrate temperature for {100}- and {111}-oriented diamond films are obtained
from the molecular-scale growth simulations. The {100} growth rates increase with temperature up to 1200K and then decrease
above this value. The {111} growth rates increase with temperature at all of the temperatures studied. The concentrations
of point defects in the {100} and {111} films are low at substrate temperatures below 1200K, but increase substantially at
higher temperatures. The growth efficiency, measured as the ratio of film growth rate to defect concentration, is maximum
between 1100–1200K for both film orientations, suggesting that this temperature range is ideal for CVD diamond growth under
the simulated growth conditions. 相似文献
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基体温度是影响金刚石薄膜生长质量的重要因素之一.基于有限元分析法,通过AN-SYS CFX软件对基体温度场进行模拟仿真,得到基体表面温度场的分布,并分别讨论了热丝-基体距离、热丝间距、水冷系数等参数对系统温度场均匀性和一致性的影响.经仿真优化后得到的参数值分别为热丝-基体距离10 mm、热丝间距15 mm、水冷系数1 000 W/(m2·K).在此优化工艺的基础上进行热丝化学气相沉积(HFCVD)金刚石薄膜的实验,并采用扫描电子显微镜(SEM)和X射线衍射仪(XRD)对金刚石薄膜表面特征进行检测.结果表明:利用仿真优化后的薄膜生长参数,可以在金刚石薄膜生长区域得到比较均匀的多晶金刚石薄膜. 相似文献
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S. M. Kanetkar G. Matera Xuekang Chen S. Pramanick P. Tiwari J. Narayan G. Pfeiffer M. Paesler 《Journal of Electronic Materials》1991,20(2):141-149
Diamond films were grown on Si(100) and boron nitride deposited Si(100) substrates using hot filament chemical vapor deposition
(HFCVD) technique. Microstructure and morphology of diamond films have been investigated systematically as a function of CH4 and H2 ratio and the ambient pressure. The deposited films were characterized by employing techniques such as scanning electron
microscopy (SEM) and laser Raman spectroscopy. The average size and growth rate of diamond particles were found to increase
with the CH4 to H2 ratio and decrease with the ambient pressure. Maximum growth rate of synthetic diamond deposited on Si(100) was found to
be ∼3.5 µm/hr for the film deposited at 20 Torr with CH4:H2 ∼ 1.5:100 (substrate temperature ∼850°C). In most of these depositions, the morphology of the diamond
crystals was cubic with significant secondary nucleation at higher methane concentrations and ambient pressure. The diamond
film deposited on Si(100) with BN buffer layer shows an improvement in growth rate and the coverage, and the secondary nucleation
was found to be substantially reduced, resulting in relatively smooth morphology. MicroRaman investigations show less amorphous
graphite formation and better structural quality of diamond film than the one deposited without the BN buffer layer.
On leave from Department of Physics University of Poona, Pune-411007 INDIA 相似文献
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本文介绍国内外低压合成金刚石薄膜中对衬底表面预处理的几种典型的工艺方法;探讨衬底表面预处理对低压下合成金刚石薄膜的影响。 相似文献