几种LDPC码的最小汉明距离的计算

本文提出一种计算LDPC码的真实最小汉明距离的方法．该方法能够用来计算多种LDPC码方案的真实最小汉明距离，比如准循环LDPC码、pi-旋转LDPC码等．该方法是通过计算码的环长间接地找到LDPC码最小距离，由于计算环长的计算量要远比直接计算最小汉明距离来得低，因而该算法能够在有限时间内找到LDPC码的真实最小距离．通过仿真表明，用目前主流的个人计算机利用该方法找出一个有最小距离24的码率为1／4的准循环LDPC码最小距离大概需要花77分钟。     

准循环LDPC码最小汉明距离的计算与校验矩阵的改善

基于线性代数的基本原理和线性分组码的结构特点,提出了能准确计算QC LDPC码最小汉明距离的方法,并对计算复杂度进行估计;然后针对QC LDPC码的结构特点,对其校验矩阵进行改善,以增大码字的最小汉明距离,从而得到更好的译码性能.其中,计算最小汉明距离的方法同样适用干普通的线性分组码.     

不规则LDPC码构造方法研究及其改进

通过对码的度数分布进行设计,非规则LDCP码能获得比规则LDPC码更好的性能,但非规则LDPC码在高SNR区会出现错误平层.在本文中,利用ACE算法,对非规则LDPC码的构造方法PEG算法进行改进,以降低非规则LDPC码的错误平层.最后Matlab模拟证明此算法有效提高了非规则LDPC码在加性高斯白噪声通道中的纠错性能.     

基于循环移位矩阵的LDPC码构造方法研究

论文提出了一种将矩阵分块并以单位阵的循环移位阵为基本单元构造LDPC码的校验矩阵的方法,降低了LDPC码在和积算法下的译码复杂度。同时,基于这种循环移位矩阵构造的类下三角结构可以减小编码复杂度。仿真和分析结果表明,这种LDPC码相对于随机构造的LDPC码在环长分布、最小汉明距离以及误码率性能方面也具有优越性。     

构造接近香农极限的低密度校验码

低密度校验(LDPC)码的性能优劣在很大程度上取决于该码的最小环长(Girth)和最小码距。本文采用几何构造方法构造最小环长为8的LDPC码,联合随机搜索算法改善其码重分布,所构造的LDPC码在码长为4k、编码效率为0.95时,距离香农极限仅1.1dB。     

具有低编码复杂度准循环扩展LDPC码的构造方法

PEG(Progressive-Edge-Growth)算法是迄今为止构造性能优异的LDPC中短码的一种有效构造方法,然而直接采用该算法构造的LDPC码的编码复杂度正比于码长的平方,这是其实用化过程中的一个瓶颈。针对这一问题,提出一种具有低编码复杂度和低错误平层的准循环扩展LDPC码的构造方法。该算法在PEG算法基础上,先构造出近似下三角结构的半随机基矩阵,然后再对基矩阵进行扩展,该方法可以在不改变基矩阵的度分布比例情况下,有效消除短环。仿真结果表明,所提出的方法构造的LDPC码比原始的PEG算法构造的随机LDPC码具有更低的错误平层,而且编码复杂度更低,更易于硬件实现。     

一种抑制LDPC码环路影响的软件方法

对低密度奇偶校验码(LDPC)在AWGN(Additive White Gaussian Noise)信道下的译码算法进行了深入研究,分析了在译码过程中出现突发错误的原因,指出出现这种错误是由于在校验矩阵中存在环路,提出了一种抑制突发错误的软件方法。在该方法中,只需对LDPC码的译码程序进行适当控制,就可有效抑制由于环路影响而出现的突发错误,进一步提高了LDPC码的译码性能和译码程序的稳定性,扩大了LDPC码的应用空间。     

一种具有最小距离下界的正则LDPC码的构造

主要提出一种新的计算规则LDPC(low-density parity-check)码的最小距离下界的方法。该方法是基于LDPC码的每个变量节点的独立树进行构造LDPC码。与随机构造的LDPC码和用PEG方法构造的方法比较,这个新的构造方法得到了更大的围长和最小距离下界。在AWGN信道中,在码长N=1 008和N=1 512时进行Matlab仿真,仿真结果表明随着信噪比的增加此方法构造的LDPC码有优异的误码率性能。     

纠正随机错误与长突发删除的多进制乘积码研究

考虑多进制LDPC码的符号特性，以及对其残留错误和删除的分析，本文采用多进制LDPC码作为内码，相同Galois域下的高码率RS码作为外码来构造多进制乘积码；并提出了一种低复杂度的迭代译码方案，减少信息传输的各类错误。在译码时，只对前一次迭代中译码失败的码字执行译码，并对译码正确码字所对应的比特初始概率信息进行修正，增强下一次迭代多进制LDPC译码符号先验信息的准确性，减少内码译码后的判决错误，从而充分利用外码的纠错能力。仿真结果显示，多进制乘积码相较于二进制LDPC乘积码有较大的编码增益，并通过迭代进一步改善了性能，高效纠正了信道中的随机错误和突发删除。对于包含2%突发删除的高斯信道，在误比特率为10-6时，迭代一次有0.4 dB左右的增益。      

一类适用于卫星回传系统的LDPC码的构造方法

指出了在卫星回传系统中采用Turbo码和LDPC码作为纠错码的优缺点,介绍了LDPC码的常用构造方法。在此基础上提出了一类适于在卫星回传系统中使用的LDPC码的构造方法,最后对使用该方法构造的LDPC码在纠错性能上,和Turbo码进行了仿真分析比较。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.