High piezoelectric properties of BaTiO3-xLiF ceramics sintered at low temperatures

BaTiO₃-xLiF ceramics were prepared by a conventional sintering method using BaTiO₃ powder about 100 nm in diameter. The effects of LiF content (x) and sintering temperature on density, crystalline structure and electrical properties were investigated. A phase transition from tetragonal to orthorhombic symmetry appeared as sintering temperatures were raised from 1100 °C to 1200 °C or as LiF was added from 0 mol% to 3 mol%. BaTiO₃-6 mol% LiF ceramic sintered at 1000 °C exhibited a high relative density of 95.5%, which was comparable to that for pure BaTiO₃ sintered at 1250 °C. BaTiO₃-4 mol% LiF ceramic sintered at 1100 °C exhibited excellent properties with a piezoelectric constant d₃₃ = 270 pC/N and a planar electromechanical coupling coefficient k_p = 45%, because it is close to the phase transition point in addition to high density.     

Effects of sintering temperature and poling conditions on the electrical properties of Ba0.70Ca0.30TiO3 diphasic piezoelectric ceramics

The effects of sintering temperature and poling conditions on the electrical properties of tetragonal and orthorhombic diphasic Ba_0.70Ca_0.30TiO₃ (BCT) lead-free ceramics have been systematically investigated. On the one hand, with increasing sintering temperature from 1270 °C to 1400 °C, the bulk density increases monotonically and the Curie temperature keeps almost constant with the value of ∼120 °C, whereas the grain size, the maximum relative dielectric constant, room temperature polarization reach the maximum values for samples sintered at 1340 °C. On the other hand, it is found that the piezoelectric property depends on poling electric field and poling temperature significantly. An enhanced piezoelectric behavior of d₃₃=126 pC/N, k_p=0.29, and Q_m=588 is obtained for the BCT ceramics poled at 100 °C with 30 kV/cm field for 20 min. The aging behavior of the piezoelectric property is also investigated.     

Structure,dielectric and piezoelectric properties of Ba0.90Ca0.10Ti1−xSnxO3 lead-free ceramics

Lead-free piezoelectric ceramics Ba_0.90Ca_0.10Ti_1−xSn_xO₃ have been prepared by a conventional ceramic fabrication technique and the effects of Sn⁴⁺ on the structure, dielectric and piezoelectric properties of the ceramics have been investigated. All the ceramics exhibit a pure perovskite structure. After the substitution of Sn⁴⁺, the crystal structure of ceramics is transformed gradually from a tetragonal to an orthorhombic phase, and becomes a pseudo-cubic phase at x≥0.14. The substitution also decreases the Curie temperature greatly from 138 °C at x=0 to 33 °C at x=0.12, and shifts the orthorhombic–tetragonal phase transition to higher temperatures. Coexistence of the orthorhombic and tetragonal phases is formed in the ceramic at x=0.10, leading to significant improvements in the piezoelectric properties: d₃₃=521 pC/N and k_p=45.5%. Our results also reveal that the ceramics sintered at higher temperatures contain larger grains, and thus exhibit more noticeable tetragonal–orthorhombic phase transition and enhanced ferroelectric and piezoelectric properties.     

Effects of CuO addition on the structure and electrical properties of low temperature sintered Ba(Zr,Ti)O3 lead-free piezoelectric ceramics

CuO-doped Ba(Zr_0.05Ti_0.95)O₃ (BZT) ceramics were prepared using conventional solid state reaction method, and their structure and electrical properties were investigated. It was found that a small amount of CuO could lower the sintering temperature significantly and make their microstructure more densified than pure BZT. The ceramics with 1.2 mol% CuO, sintered at 1250 °C, showed excellent piezoelectric properties with d₃₃~320 pC/N and k_p=44%. The sintering temperature was decreased by 150 °C than that for pure BZT ceramics while showing comparable piezoelectric properties. Moreover, the influence of sintering temperature on the optimally 1.2 mol% CuO-doped BZT ceramics was studied. With the temperature change, different patterns of crystal growth were observed in the doped BZT ceramics. When the sintering temperature increased from 1200 °C to 1350 °C, the patterns of normal–abnormal–normal grain growth were changed accordingly.     

Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Densification, microstructural evolution and microwave dielectric properties of fluxed sintered 12R-Ba(Ti0.5Mn0.5)O3 ceramics

Doped hexagonal BaTiO₃ (h-BaTiO₃) ceramics have recently been identified as potential candidates for use in microwave dielectric resonators. However, similar to other common microwave ceramics, doped h-BaTiO₃ ceramics require a sintering temperature higher than 1400 °C. In this study, the effects of Bi₂O₃ and Li₂CO₃ on the densification, microstructural evolution and microwave properties of hexagonal 12R-Ba(Ti_0.5Mn_0.5)O₃ ceramics were examined. Results indicate that Bi₂O₃ and Li₂CO₃ are able to effectively reduce the sintering temperature of 12R-Ba(Ti₀₅Mn_0.5)O₃ ceramics through liquid phase sintering while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 12R-Ba(Ti_0.5Mn_0.5)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 1200 °C (?_r: 36.0, Qf_r: 6779 GHz, and τ_f: 25.3 ppm/°C), and 5 wt% Li₂CO₃ sintered at 1200 °C (?_r: 28.1, Qf_r: 5304 GHz, and τ_f: 35.3 ppm/°C).     

Chemical stability and electrochemical properties of CaMoO3−δ for SOFC anode

In an effort to develop alternative anode materials based on mixed conducting ceramics capable of offering high mixed ionic-electronic conductivity, stability to redox cycles, and limited activity for carbon formation to Ni/YSZ cermets, CaMoO₃ ceramics for application as a solid oxide fuel cell (SOFC) anode material were synthesized as a function of temperature and oxygen partial pressure (pO₂). CaMoO₃ perovskite-dominant powders were obtained by reducing the CaMoO₄ showing a structure of orthorhombic unit cells with the following lattice parameters: a = 5.45 Å, b = 5.58 Å, and c = 7.78 Å. The equilibrium total conductivity of CaMoO₃, measured by DC 4-probe method in 5% H₂/balance N₂ condition (pO₂ ≈ 10⁻²² atm) at various temperatures, decreased with increasing temperature below 400 °C, indicating metallic properties with an activation energy of 0.028 eV. Between 400 °C and 600 °C, the equilibrium total conductivity slightly increased, and finally sharply decreased at 800 °C. The Mo metal precipitation during measurement was thermodynamically proved by the predominance diagram for CaMoO₃. Finally, a fuel cell with CaMoO₃ anode exhibited poor performance with a maximum power density of only 14 mW/cm² at 900 °C, suggesting that further research is needed to enhance the ionic conductivity and thus improve the catalytic properties.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

Synthesis of nanocrystalline ytterbium-doped yttria by citrate-gel combustion method and fabrication of ceramic materials

Nanosized ytterbium doped yttria powders were prepared by citrate-gel combustion techniques. As-synthesized precursor and calcined powders were characterized for their crystalline structure, particle size and morphologies. Nanocrystalline Yb³⁺:Y₂O₃ powders with pure cubic yttria crystal structure were obtained by calcination of as-prepared precursors at 1100 °C for 3 h. Powders obtained were well dispersed with an average particle size of 60 nm. By using the obtained powders, nearly full dense Yb³⁺:Y₂O₃ ceramics were produced by vacuum sintering at 1800 °C for 12 h. The emission spectrum of the sintered ceramics under the excitation wavelength of 905 nm illustrates that there are three fluorescence peaks locating at 976 nm, 1030 nm and 1075 nm respectively, all corresponding to the ²F_5/2 → ²F_7/2 transitions of ytterbium ion.     

Enhanced mechanical and dielectric behavior of BaTiO3/Cu composites

BaTiO₃/xCu composite ceramics with x = 0-30 wt.% were fabricated by the traditional mixing method in nitrogen gas. The mechanical properties and electric properties of the obtained composites were investigated as a function of the Cu mass fraction using a three bending test and impedance spectroscopy. The results indicated that the relative density of the sintered composites reached above 91%, the Cu-dispersed BaTiO₃ composites enhanced the mechanical properties, particularly the high fracture toughness (∼3.9 MPa m^1/2) and bending strength (∼134 MPa), compared to the monolithic BaTiO₃. Furthermore, the percolation threshold of BaTiO₃/Cu composites was x = 25 wt.%. The permittivity (?_r) markedly increased from ∼2000 for monolithic BaTiO₃ to ∼9000 with increasing Cu up to 30 wt.%. Additionally, the temperature coefficient of this system was less than 5% in the temperature range of 25-115.     

Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8 ceramics doped with ZnO–La2O3–B2O3 glass

Li₂ZnTi₃O₈ ceramics doped with ZnO–La₂O₃–B₂O₃ glass were prepared by the conventional solid-state ceramic route. The effects of the ZnO–La₂O₃–B₂O₃ glass on the sintering temperature, phase composition, microstructure and microwave dielectric properties of Li₂ZnTi₃O₈ ceramics were investigated. The addition of ZLB glass can reduce the sintering temperature of Li₂ZnTi₃O₈ ceramic from 1075 °C to 925 °C without obvious degradation of the microwave dielectric properties. Only a single phase Li₂ZnTi₃O₈ with cubic spinel structure is formed in Li₂ZnTi₃O₈ ceramic with ZLB addition sintered at 925 °C. Typically, 1.0 wt% ZLB-doped Li₂ZnTi₃O₈ ceramic sintered at 925 °C can reach a maximum relative density of 95.8% and exhibits good microwave dielectric properties of ε_r=24.34, Q×f=41,360 GHz and τ_f=−13.4 ppm/°C. Moreover, this material is compatible with Ag electrode, which makes it a promising candidate for LTCC application.     

The phase structure and electric properties of low-temperature sintered (K,Na)NbO3-based piezoceramics modified by CuO

0.25 wt% CuO-doped (Li,K,Na)(Nb,Ta)O₃–AgSbO₃ lead-free piezoceramics with pure perovskite structure were successfully prepared at a sintering temperature below 1000 °C. The sintering temperature of KNN-based piezoceramics was effectively reduced by about 100 °C due to the enhanced densification process induced by the addition of CuO. Besides, the acceptable sintering temperature window was broadened by the addition of CuO. It is found that the CuO-doped samples show slightly higher tetragonal–orthorhombic phase transition point (T_T−O) but a lower Curie point (T_c), compared to undoped ones. The KNN-based piezoceramics became “hard” as CuO was added, supported by an increase of Q_m. Fairly good electrical properties of d₃₃^*=383 pm/V, ε_r=860, Q_m=188 and T_c=215 °C could be obtained in dense CuO-modified KNN-based piezoceramics sintered at 970 °C, demonstrating promising potential in practical applications.     

Transparent polycrystalline MgAl2O4 ceramic fabricated by spark plasma sintering: Microwave dielectric and optical properties

The optical properties and microwave dielectric properties of transparent polycrystalline MgAl₂O₄ ceramics sintered by spark plasma sintering (SPS) through homemade nanosized MgAl₂O₄ powders at temperatures between 1250 °C and 1375 °C are discussed. The results indicate that, with increasing sintering temperatures, grain growth and densification occurred up to 1275 °C, and above 1350 °C, rapid grain and pore growth occurred. The in-line light transmission increases with the densification and decreases with the grain/pore growth, which can be as high as 70% at the wavelength of 550 nm and 82% at the wavelength of 2000 nm, respectively. As the sintering temperature increases, Q×f and dielectric constant ε_r values increase to maximum and then decrease respectively, while τ_f value is almost independent of the sintering temperatures and remains between −77 and −71 ppm/°C. The optimal microwave dielectric properties (ε_r=8.38, Q×f=54,000 GHz and τ_f=−74 ppm/°C) are achieved for transparent MgAl₂O₄ ceramics produced by spark plasma sintering at 1325 °C for 20 min.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Microstructure and dielectric properties of Dy/Mn doped BaTiO3 ceramics

Dy/Mn doped BaTiO₃ with different Dy₂O₃ contents, ranging from 0.1 to 5.0 at% Dy, were investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all the investigated samples. The samples were prepared by the conventional solid state reaction and sintered at 1290°, and 1350 °C in air atmosphere for 2 h. The low doped samples (0.1 and 0.5 at% Dy) exhibit mainly fairly uniform and homogeneous microstructure with average grain sizes ranged from 0.3 μm to 3.0 μm. At 1350 °C, the appearance of secondary, abnormal, grains in the fine grain matrix and core–shell structure were observed in highly doped Dy/BaTiO₃. Dielectric measurements were carried out as a function of temperature up to 180 °C. The low doped samples sintered at 1350 °C, display the high value of dielectric permittivity at room temperature, 5600 for 0.1Dy/BaTiO₃. A nearly flat permittivity–temperature response was obtained in specimens with 2.0 and 5.0 at% additive content. Using a Curie–Weiss and modified Curie–Weiss low, the Curie constant (C), Curie like constant (C′), Curie temperature (T_C) and a critical exponent (γ) were calculated. The obtained values of γ pointed out the diffuse phase transformation in highly doped BaTiO₃ samples.     

Microstructure and electrical properties of (Na0.5K0.5)1−2xMgxNbO3–Bi0.5Na0.5TiO3 lead-free piezoelectric ceramics

0.975[(Na_0.5K_0.5)_1−2xMg_xNbO₃]–0.025(Bi_0.5Na_0.5TiO₃) (KNMN–BNT, x=0, 0.01, 0.02, 0.03, 0.04 and 0.05) lead-free piezoelectric ceramics were fabricated by the conventional solid-state sintering method. The dependence of Mg content on the microstructure and electrical properties of the ceramics is investigated. The X-ray diffraction (XRD) analysis revealed that an appropriate amount of Mg diffused into the KNN–BNT lattice to form a stable solid solution, the ceramics possessed a pure perovskite structure, and a morphotropic phase boundary (MPB) between the orthorhombic and tetragonal phases was observed with the composition of 0.02≤x≤0.05. The orthorhombic–tetragonal transition temperature (T_O–T) is less than 95 °C and the Curie temperature (T_c) is almost unchanged (~360 °C) with the increase of MgO content. The ceramics with x=0.02 showed enhanced piezoelectric and ferroelectric properties because of close proximity to the MPB, i.e., d₃₃~210 pC/N, k_p~0.41, 2E_c~22.4 kV/cm and 2P_r~39.2 μC/cm². Moreover, the dielectric properties exhibited optimal effects with x=0.02, that is ε_r~637 and tan δ~0.09. These results indicate that the introduction of MgO is an effective method to improve the density as well as the electrical properties and the temperature stability of the KNN–BNT ceramics. As a result, the KNMN–BNT ceramic is a promising candidate for lead-free piezoelectric materials.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Low temperature synthesis and dielectric, ferroelectric and piezoelectric study of microwave sintered BaTiO3 ceramics

Barium titanate (BaTiO₃/BT) ferroelectric system was synthesized in single perovskite phase at low temperature by using powders derived from modified solid state reaction (MSSR) and sintered by microwave (MW) processing routes. Conventional calcination temperature was optimized at 900 °C for 4 h. MW sintering of BT samples was carried out at 1100 °C for 30 min to get dense (98% density) ceramics. Room temperature (RT) dielectric constant (?_r) and dielectric loss (tan δ) at 1 kHz frequency of MW sintered BT samples was found to be ∼2500 and 0.03, respectively. Saturated polarization vs. electric field (P-E) loops with remnant polarization (P_r) ∼6 μC/cm² and coercive field (E_c) ∼1.45 kV/cm confirmed the ferroelectric nature of MW sintered BT samples. Piezoelectric coefficient from strain vs. electric field (S-E) loops study was found to be 335 pm/V.