初始频率啁啾的高斯光脉冲在线性色散光纤中的传播

研究了线性光纤中色散导致初始频率啁啾的高斯光脉冲展宽的详细物理过程,以此为光纤中光孤子产生的物理过程做准备。     

频率啁啾高斯光脉冲在线性色散光纤中的传播

研究了线性光纤中色散导致初始频率啁啾的高斯光脉冲展宽的详细物理过程。     

啁啾高斯脉冲在光纤中传输的脉冲展宽研究

通过求解非线性薛定谔方程,研究了线性光纤中色散导致的具有初始频率啁啾的高斯脉冲展宽的详细物理过程。得到高斯脉冲在光纤中色散所致的脉冲展宽的特性,啁啾因子对脉冲展宽的影响,并讨论了光纤色散对不同宽度脉）中的影响,对色散补偿等技术的研究具有一定的参考价值。     

无初始啁啾高斯光脉冲的色散展宽及色散补偿

对无初始啁啾高斯脉冲在普通单模光纤中的传输特性及线性啁啾光纤光栅的色散补偿特性进行了理论分析和数值模拟。结果表明,光纤的色散导致了传输脉冲的展宽,线性啁啾光纤光栅能够实现对展宽脉冲的良好补偿,啁啾光栅时延曲线的平滑度和线性度都是影响其色散补偿性能的重要因素。本文对啁啾光纤光栅的制作及其在色散补偿中的应用有一定的指导意义。     

采用啁啾光纤光栅补偿带啁啾的超高斯脉冲在光纤中传输的色散

利用啁啾光纤光栅,对带啁啾的超高斯脉冲的色散补偿特性进行了理论分析和数值模拟。数值模拟结果表明,光脉冲在普通单模光纤中传输了一定距离后,由于色散的作用,脉冲发生展宽,超高斯脉冲比高斯脉冲展得更宽。若初始脉冲含有啁啾,展宽后的脉冲还出现小调制。用啁啾光纤光栅进行色散补偿后,高斯型脉冲能够较好的恢复初始脉冲形状,带啁啾的超高斯脉冲的脉宽可恢复到接近初始脉冲的宽度,但脉冲形状发生了畸变,并出现了旁瓣,脉冲峰值功率与超高斯脉冲阶数和啁啾参数有关。     

预啁啾对偏复用孤子技术的补偿

在导出自相位调制和交叉相位调制共同作用所致相位调制频率啁啾的基础上,数值研究了相位调制频率啁啾与初始啁啾的关系,并对有和无初始啁啾40Gbit/s归零码(RZ)在二阶和三阶色散完全补偿(路径平均色散为0)的色散管理偏振复用孤子传输系统中的传输效果进行计算。结果表明,在输入功率达到一定值时,初始啁啾参量C对相位调制频率啁啾的作用,决定着系统偏振复用孤子技术的成效及传输性能,适当选取初始啁啾参量C能够有效抑制偏振模色散,提高孤子脉冲稳定传输距离。     

色散缓变光纤中的脉冲宽度研究

计算了高斯型脉冲宽度在色散缓变光纤中的传播特性和初始啁啾对脉宽演变的影响。讨论发现与单模光纤相比，色散缓变光纤中脉冲展宽较慢，并能有效抑制脉冲展宽；初始啁啾对脉宽有较大影响，初始啁啾参量C过大会造成脉冲严重展宽。     

啁啾指数脉冲的非线性传输研究

数值研究了初始线性啁啾指数光脉冲在单模光纤反常色散区的非线性传输特性,并将这种特性与双曲正割脉冲的相关特性作了比较.脉冲振幅A=1时,负啁啾对脉冲时域宽度展宽的影响比正啁啾大;指数脉冲受啁啾影响比双曲正割脉冲更敏感.A＞1.2时,脉宽在演化过程中呈周期性衰减振荡,振荡周期和振幅随啁啾|C|(|C|≤2)的增大而增大,最后能演化成光孤子.脉冲演化成光孤子所需的最小振幅A比啁啾双曲正割脉冲的大.     

光参量效应中低阶色散对超短高斯脉冲展宽的影响

以宽度为50 fs的超短脉冲和负单轴晶体CsLiB6O10(CLBO)为例,对非线性光学晶体中低阶群速度色散(GVD)导致的超短高斯脉冲和超高斯脉冲的脉冲展宽进行了理论分析.在光参量相互作用过程中,对初始无啁啾和有啁啾调制的超短高斯脉冲的脉冲展宽机制和因素进行了数值计算,得出群速度色散导致超短脉冲的寻常光比非寻常光脉冲展宽更严重;波长越短,脉冲展宽越大;当晶体长度等于色散长度时,脉冲宽度增加为初始时的2倍,色散长度越短,超短脉冲展宽越明显.     

超高斯啁啾光脉冲在单模光纤中传输的演化行为

本文从激光脉冲在单模光纤中传输所满足的非线性薛定谔方程出发,通过分步傅里叶变换方法,数值研究了超高斯啁啾光脉冲在单模光纤中脉冲形状的演化.研究表明,超高斯脉冲在单模光纤中传输将经历一个从近平顶、多峰、最后到单峰的演变过程,且高阶色散将引起脉冲形状发生畸变;在GVD和SPM效应的共同作用下,无啁啾的超高斯脉冲在特定条件下将出现孤子演变,具有正啁啾的超高斯脉冲在传输的初始阶段,脉冲形状的变化非常剧烈,而由于负初始啁啾减弱了非线性与色散效应引起的频率啁啾,所以其脉冲波形的变化平缓一些.研究表明,SPM产生的啁啾对入射脉冲的初始啁啾有一定的补偿作用.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.