High piezoelectric properties of BaTiO3-xLiF ceramics sintered at low temperatures

BaTiO₃-xLiF ceramics were prepared by a conventional sintering method using BaTiO₃ powder about 100 nm in diameter. The effects of LiF content (x) and sintering temperature on density, crystalline structure and electrical properties were investigated. A phase transition from tetragonal to orthorhombic symmetry appeared as sintering temperatures were raised from 1100 °C to 1200 °C or as LiF was added from 0 mol% to 3 mol%. BaTiO₃-6 mol% LiF ceramic sintered at 1000 °C exhibited a high relative density of 95.5%, which was comparable to that for pure BaTiO₃ sintered at 1250 °C. BaTiO₃-4 mol% LiF ceramic sintered at 1100 °C exhibited excellent properties with a piezoelectric constant d₃₃ = 270 pC/N and a planar electromechanical coupling coefficient k_p = 45%, because it is close to the phase transition point in addition to high density.     

The phase structure and electric properties of low-temperature sintered (K,Na)NbO3-based piezoceramics modified by CuO

0.25 wt% CuO-doped (Li,K,Na)(Nb,Ta)O₃–AgSbO₃ lead-free piezoceramics with pure perovskite structure were successfully prepared at a sintering temperature below 1000 °C. The sintering temperature of KNN-based piezoceramics was effectively reduced by about 100 °C due to the enhanced densification process induced by the addition of CuO. Besides, the acceptable sintering temperature window was broadened by the addition of CuO. It is found that the CuO-doped samples show slightly higher tetragonal–orthorhombic phase transition point (T_T−O) but a lower Curie point (T_c), compared to undoped ones. The KNN-based piezoceramics became “hard” as CuO was added, supported by an increase of Q_m. Fairly good electrical properties of d₃₃^*=383 pm/V, ε_r=860, Q_m=188 and T_c=215 °C could be obtained in dense CuO-modified KNN-based piezoceramics sintered at 970 °C, demonstrating promising potential in practical applications.     

Microstructure and piezoelectric properties of CuO-doped 0.95(K0.5Na0.5)NbO3-0.05Li(Nb0.5Sb0.5)O3 lead-free ceramics

The effects of sintering temperature and the addition of CuO on the microstructure and piezoelectric properties of 0.95(K_0.5Na_0.5)NbO₃-0.05Li(Nb_0.5Sb_0.5)O₃ were investigated. The KNN-5LNS ceramics doped with CuO were well sintered even at 940 °C. A small amount of Cu²⁺ was incorporated into the KNN-5LNS matrix ceramics and XRD patterns suggested that the Cu²⁺ ion could enter the A or B site of the perovskite unit cell and replace the Nb⁵⁺ or Li⁺ simultaneously. The study also showed that the introduction of CuO effectively reduced the sintering temperature and improved the electrical properties of KNN-5LNS. The high piezoelectric properties of d₃₃ = 263 pC/N, k_p = 0.42, Q_m = 143 and tan δ = 0.024 were obtained from the 0.4 mol% CuO doped KNN-5LNS ceramics sintered at 980 °C for 2 h.     

Effects of sintering temperature and poling conditions on the electrical properties of Ba0.70Ca0.30TiO3 diphasic piezoelectric ceramics

The effects of sintering temperature and poling conditions on the electrical properties of tetragonal and orthorhombic diphasic Ba_0.70Ca_0.30TiO₃ (BCT) lead-free ceramics have been systematically investigated. On the one hand, with increasing sintering temperature from 1270 °C to 1400 °C, the bulk density increases monotonically and the Curie temperature keeps almost constant with the value of ∼120 °C, whereas the grain size, the maximum relative dielectric constant, room temperature polarization reach the maximum values for samples sintered at 1340 °C. On the other hand, it is found that the piezoelectric property depends on poling electric field and poling temperature significantly. An enhanced piezoelectric behavior of d₃₃=126 pC/N, k_p=0.29, and Q_m=588 is obtained for the BCT ceramics poled at 100 °C with 30 kV/cm field for 20 min. The aging behavior of the piezoelectric property is also investigated.     

Piezoelectric and dielectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3–Ba(Zr0.04Ti0.96)O3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics of (1 − x)(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xBa(Zr_0.04Ti_0.96)O₃ (abbreviated as BNBT–BZT100x, wherein x from 0 to 10 mol%) were fabricated. We have studied effects of amount of BZT content on the electrical properties and microstructures. X-ray diffraction analysis indicates that a solid solution is formed when BZT diffuses into the BNBT lattice, and further the crystal structure of sintered hybrid changes from rhombohedral to tetragonal symmetry along with increasing BZT content. Piezoelectric property measurements reveal that the BNBT–BZT4 ceramics has the highest piezoelectric performance, for example, the piezoelectric constant d₃₃ reaches to 167 pC/N and planar electromechanical coupling factor k_p is up to 0.27. In addition, the effect of Bi₂O₃ on the electrical properties and microstructure of the BNBT–BZT4 ceramics have also been studied, and found that the doping of Bi enhances the piezoelectric properties of ceramics.     

Structural and electrical properties of BZT-added BNLT ceramics

Lead free piezoelectric ceramics (1−x)BNLT−xBZT with x=0.00, 0.06, 0.09 and 0.12 were prepared using a two-step mixed oxide method. Dielectric, ferroelectric and piezoelectric properties of the ceramics were improved by the addition of the BZT. XRD results show tetragonal symmetry structure of the BNLT–BZT ceramics. It was found that the tetragonality increases with increasing BZT content. The optimum composition is x=0.09, where the maximum values of the piezoelectric constant d₃₃ (~126 pC/N) and dielectric constant (~2400) were obtained at room temperature. This BNLT–BZT system can be a promising candidate for lead-free piezoelectric ceramics.     

Bi(Zn1/2Ti1/2)O3 modified BiFeO3–BaTiO3 lead-free piezoelectric ceramics with high temperature stability

Lead-free high-temperature ceramics with compositions of 0.71BiFe_1−x(Zn_1/2Ti_1/2)_xO₃–0.29BaTiO₃ (BFZTx–BT, x=0–0.05 mol fraction) were fabricated by a conventional solid state reaction method. The effect of Bi(Zn_1/2Ti_1/2)O₃ (BZT) addition on the microstructure, electrical properties, relaxor behavior, and temperature stability has been studied. XRD patterns revealed that all compositions formed a single perovskite phase of pseudo-cubic crystal structure. The grain size was slightly affected by BZT addition. The diffuse phase transition and strong frequency dispersion of dielectric permittivity are observed for BZT modified ceramics. The addition of BZT into BFZTx–BT was also found to affect the piezoelectric properties and temperature stability of the ceramics with maximum values observed for x=0.5% and 1% BFZTx–BT compositions, respectively. The optimum piezoelectric properties with d₃₃=163 pC/N, together with high-temperature stability with a depolarization temperature T_d∼380 °C, reveal the BFZTx–BT ceramics to be promising high-temperature Pb-free piezoelectric materials.     

Low temperature sintering and microwave dielectric properties of CaSiO3–Al2O3 ceramics for LTCC applications

The effects of CuO, Li₂CO₃ and CaTiO₃ additives on the densification, microstructure and microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics for low-temperature co-fired applications were investigated. With a single addition of 1 wt% Li₂CO₃, the CaSiO₃–1 wt% Al₂O₃ ceramic required a temperature of at least 975 °C to be dense enough. Large amount addition of Li₂CO₃ into the CaSiO₃–1 wt% Al₂O₃ ceramics led to the visible presence of Li₂Ca₃Si₆O₁₆ and Li₂Ca₄Si₄O₁₃ second phases. Fixing the Li₂CO₃ content at 1 wt%, a small amount of CuO addition significantly promoted the sintering process and lowered the densification temperature to 900 °C whereas its addition deteriorated the microwave dielectric properties of CaSiO₃–1 wt% Al₂O₃ ceramics. Based on 10 wt% CaTiO₃ compensation in temperature coefficient, good microwave dielectric properties of ε_r=8.92, Q×f=19,763 GHz and τ_f=−1.22 ppm/°C could be obtained for the 0.2 wt% CuO and 1.5 wt% Li₂CO₃ doped CaSiO₃–1 wt% Al₂O₃ ceramics sintered at 900 °C. The chemical compatibility of the above ceramics with silver during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between silver and ceramics, indicating that the as-prepared composite ceramics were suitable for low-temperature co-fired ceramics applications.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

Microstructure and electrical properties of (Na0.5K0.5)1−2xMgxNbO3–Bi0.5Na0.5TiO3 lead-free piezoelectric ceramics

0.975[(Na_0.5K_0.5)_1−2xMg_xNbO₃]–0.025(Bi_0.5Na_0.5TiO₃) (KNMN–BNT, x=0, 0.01, 0.02, 0.03, 0.04 and 0.05) lead-free piezoelectric ceramics were fabricated by the conventional solid-state sintering method. The dependence of Mg content on the microstructure and electrical properties of the ceramics is investigated. The X-ray diffraction (XRD) analysis revealed that an appropriate amount of Mg diffused into the KNN–BNT lattice to form a stable solid solution, the ceramics possessed a pure perovskite structure, and a morphotropic phase boundary (MPB) between the orthorhombic and tetragonal phases was observed with the composition of 0.02≤x≤0.05. The orthorhombic–tetragonal transition temperature (T_O–T) is less than 95 °C and the Curie temperature (T_c) is almost unchanged (~360 °C) with the increase of MgO content. The ceramics with x=0.02 showed enhanced piezoelectric and ferroelectric properties because of close proximity to the MPB, i.e., d₃₃~210 pC/N, k_p~0.41, 2E_c~22.4 kV/cm and 2P_r~39.2 μC/cm². Moreover, the dielectric properties exhibited optimal effects with x=0.02, that is ε_r~637 and tan δ~0.09. These results indicate that the introduction of MgO is an effective method to improve the density as well as the electrical properties and the temperature stability of the KNN–BNT ceramics. As a result, the KNMN–BNT ceramic is a promising candidate for lead-free piezoelectric materials.     

Dielectric properties and diffuse phase transition behavior of CuO-doped lead-free Ba(ZrxTi1−x)O3 ceramics

CuO-doped lead-free Ba(Zr_0.2Ti_0.8)O₃ (BZT20) ceramics were prepared through a solid state processing technique, and the effects of CuO on microstructure, dielectric properties and diffuse phase transition behavior were investigated. The average grain sizes were increased by CuO doping. The temperature and frequency dependences of the dielectric constant revealed that CuO-doped BZT20 ceramics exhibited broad diffuse phase transition behavior. The dielectric constant increased with increasing CuO concentration. The value of T_m and degree of diffusion (γ) changed regularly in the studied compositional ranges. The BZT20 samples with 1.0 mol% CuO doping, sintered at 1310 °C, showed excellent dielectric property and lower diffusivity with ε_m=21,371 and γ=1.87. These results can be explained by the disordered distribution of Cu ions in the B sites and the weakened bonding force with oxygen ions in Cu substituted BZT20 structure.     

Phase structure and nano-domain in high performance of BaTiO3 piezoelectric ceramics

BaTiO₃ ceramics were prepared by conventional sintering technique with a special emphasis on the effects of sintering temperature (1100-1230 °C) on the crystalline structure and piezoelectric properties. XRD patterns indicated that the crystallographic structure changed from tetragonal phase to orthorhombic one with raising sintering temperature from 1160 °C to 1180 °C. Domains were shaped in a stripe and a herringbone in orthorhombic samples for BaTiO₃ ceramics. The domain width and domain density increased with raising sintering temperature. The BaTiO₃ ceramic sintered at 1190 °C showed the excellent electrical properties, d₃₃ = 355 pC/N, k_p = 40%, P_r = 10.2 μC/cm², respectively, which are originated to the contributions of both the crystallographic structure transition and nano-domain.     

Structure,dielectric and piezoelectric properties of Ba0.90Ca0.10Ti1−xSnxO3 lead-free ceramics

Lead-free piezoelectric ceramics Ba_0.90Ca_0.10Ti_1−xSn_xO₃ have been prepared by a conventional ceramic fabrication technique and the effects of Sn⁴⁺ on the structure, dielectric and piezoelectric properties of the ceramics have been investigated. All the ceramics exhibit a pure perovskite structure. After the substitution of Sn⁴⁺, the crystal structure of ceramics is transformed gradually from a tetragonal to an orthorhombic phase, and becomes a pseudo-cubic phase at x≥0.14. The substitution also decreases the Curie temperature greatly from 138 °C at x=0 to 33 °C at x=0.12, and shifts the orthorhombic–tetragonal phase transition to higher temperatures. Coexistence of the orthorhombic and tetragonal phases is formed in the ceramic at x=0.10, leading to significant improvements in the piezoelectric properties: d₃₃=521 pC/N and k_p=45.5%. Our results also reveal that the ceramics sintered at higher temperatures contain larger grains, and thus exhibit more noticeable tetragonal–orthorhombic phase transition and enhanced ferroelectric and piezoelectric properties.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Dielectric properties of B2O3-doped 0.98CeO2–0.02CaTiO3 ceramics at microwave frequency

Microwave dielectric properties and microstructure of 0.98CeO₂–0.02CaTiO₃ ceramics with B₂O₃ additions prepared with the conventional solid-state route have been investigated. 0.98CeO₂–0.02CaTiO₃ ceramics can be sintered at 1290 °C for 4 h due to the sintering aid effect resulting from the B₂O₃ additions. At sintering temperature of 1380 °C for 4 h, 0.98CeO₂–0.02CaTiO₃ ceramics with 0.25 wt% B₂O₃ addition possess a dielectric constant (?_r) of 21.3, a Q × f value of 60,000 (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of −41 ppm/°C.     

Sintering,microstructure and conductivity of La2NiO4+δ ceramic

Microstructure and electrical conducting properties of La₂NiO_4+δ ceramic were investigated in the sintering temperature range 1200–1400 °C. The results demonstrate that the microstructure and electrical conducting properties of La₂NiO_4+δ ceramic are sensitive to sintering temperature. Compared with a progressive densification development with sintering temperature from 1200 to 1300 °C along with an insignificant change in grain size, there is an exaggerated grain growth in the specimens sintered at higher temperatures. Increasing sintering temperature from 1200 to 1300 °C resulted in an enhancement of electrical conducting properties. Further increase of sintering temperature exceeding 1300 °C reduced the electrical conducting properties. A close relation between the microstructure and electrical conducting properties was suggested for La₂NiO_4+δ ceramic. With respect to the electrical conducting properties, the preferred sintering temperature of La₂NiO_4+δ ceramic was ascertained to be 1300 °C. The specimen sintered at 1300 °C exhibits a generally uniform microstructure together with electrical conductivities of 76–95 S cm⁻¹ at 600–800 °C.     

Investigation of nano particle additives on lithium doped KNN lead free piezoelectric ceramics

Lead free potassium sodium niobate modified piezoelectric ceramics were synthesized through conventional mixed oxide method. Crystal structure and microstructure were analyzed by X-ray diffraction and scanning electron microscopy (SEM). The effects of nano ZnO, CuO and SnO₂ additives as the nano scale sintering aids, on microstructure and electrical properties of (K₀₅₀Na_0.50)_0.94Li_0.06NbO₃ (KNNL-6) ceramics were investigated. The optimum dielectric and piezoelectric properties of ?_r = 560, d₃₃ = 215 pC/N and tan δ = 0.008 were obtained for pure KNNL-6 that sintered at 1000 °C for 2 h. The results show that with addition of nano particle sintering aids, the piezoelectric coefficient d₃₃ of (K₀₅₀Na_0.50)_0.94Li_0.06NbO₃ ceramics was decreased. The decrease in piezoelectric charge coefficient could be due to the hardening effect, which lowers the piezoelectric charge.     

Direct synthesis of barium zirconate titanate (BZT) nanoparticles at room temperature and sintering of their ceramics at low temperature

Using tetrabutyl titanate, zirconium nitrate and barium octahydrate as the raw materials, BZT nanoparticles with a grain size of ~10 nm were directly synthesized at room temperature. With low energy consumption and without any contamination produce, the synthesis process is green, environmental-friendly, convenient and efficient. The graingrowth of the as-prepared nanoparticles annealed at different temperatures was checked, and a rapid graingrowth starting at 600 °C was observed. The sintering characteristics were also studied and it was found that an adapted sintering aid was very important for the sintering of the BZT nanoparticles at low temperature. Here, adding the useful active liquid of Bi₂O₃–Li₂O as the sintering aid results in obtaining the dense BZT ceramics with the relative density of 96% even sintering at the temperature as low as 900 °C for 2 h.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.