全金属化耦合封装的大功率半导体激光器模块

大功率半导体激光器模块对耦合封装工艺要求较高,耦合封装工艺直接影响模块的可靠性。采用金属化楔形微透镜光纤与大功率半导体激光器对准耦合,耦合效率达到87%;采用激光焊接定位的方式对大功率半导体激光器与楔形微透镜光纤进行耦合固定,实现了大功率半导体激光器模块的全金属化封装。通过环境考核试验证明,模块储存温度达到-60～120℃,能够满足许多特殊环境对半导体激光器模块的要求。     

Semiconductor mirror for optical noise suppression and dynamic dispersion compensation

We report on a monolithic Gires-Tournois semiconductor interferometer used for both suppression of low-intensity spontaneous noise in a high-power fiber amplifier and to generate a tunable delay. The potential of the noise suppression technique was demonstrated using a two-stage amplifier system. Gain improvement by a factor of five illustrates the capability of semiconductor gates to greatly enhance energy extraction from optical amplifiers. We demonstrate also that controllable saturable absorption in an optically pumped multiple-quantum-well semiconductor reflector provides promising means for rapidly changing the group delay of the reflector and represents a new form of dynamic dispersion compensator.     

光纤光栅外腔半导体激光器的实验研究

利用光纤光栅作为选频元件的外腔半导体激光器具有波长稳定性和可控性好等优点。报道了该激光器的关键工艺 ,主要是光纤光栅制备、芯片的腔面增透和光纤耦合封装等。报道了初步的实验结果。     

高功率850 nm宽光谱大光腔超辐射发光二极管

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为提高半导体超辐射发光管的光谱宽度,采用非均匀阱宽多量子阱(MQW)材料拓宽超辐射器件的输出光谱。优化设计器件的波导结构,利用大光腔结构设计出高功率、低发散角850 nm超辐射发光二极管。采用直波导吸收区而后在器件的出光腔面上镀制抗反射膜的方法制作超辐射发光二极管。器件在140 mA时器件半峰全宽(FWHM)可以达到26 nm,室温下连续输出功率达到7 mW。器件的垂直发散角为28°,水平发散角为10°。由于器件具有比较小的发散角,与光纤耦合时具有比较高的耦合效率,单模保偏光纤耦合输出功率达到1.5 mW。     

大功率宽条分布反馈激光器研究

大功率半导体激光器一般用作抽运源,但其抽运的离子吸收峰带宽一般都比较小。为提高大功率半导体激光器对固体或光纤激光器等的抽运效率,就要降低半导体激光器的输出波长随注入电流和热沉温度的漂移系数。分析了光栅深度和光栅填充因子对激光器输出波长锁定效果的影响,实验验证确定出合适的光栅参数,依据优化条件得出合适的激光器腔长,制备出锁定效果良好的宽条分布反馈激光器。该激光器的单管腔长2.4mm,发光条宽100μm,连续最大输出功率400mW,热沉温度为15℃时的输出波长为954nm,输出波长随注入电流的漂移系数为0.67nm/A,输出波长的温漂系数为0.046nm/K。     

RIN transfer suppression technique for dual-order Raman pumping schemes

An optical technique is demonstrated for suppressing the relative intensity noise (RIN) transfer from a high-power second-order pump laser to the signal radiation in a copropagating dual-order Raman pumping scheme. RIN transfer suppression is accomplished by intensity-modulating a low-power semiconductor laser diode first-order pump. Measurements are presented demonstrating suppression over the entire electronic bandwidth and -20-dB suppression spanning a 23-nm optical bandwidth. This technique may facilitate the use of high-power fiber lasers in copropagating dual-order distributed Raman amplifiers.     

High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

We report demonstration of a new high-power semiconductor laser technology, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL). Using diode laser pump, an OPS-VECSEL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near /spl lambda//spl sim/1004 nm with record output power of 0.69 W in a TEM/sub 11/ mode, 0.52 W in a TEM/sub 00/ mode, and 0.37 W coupled to a single-mode fiber. It is feasible to produce greater than 1 W of power in a diffraction-limited circular beam from an efficient, compact, manufacturable and reliable OPS-VECSEL laser.     

+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAGlaser

Efficient energy transfer has been demonstrated in an Er/Yb codoped phosphorus-doped silica fiber for the first time. This has indirectly allowed the use of reliable, high-power AlGaAs diode laser arrays as the semiconductor pump source through the use of a diode-pumped Nd:YAG laser (DPL) operating at 1064 nm. Small signal gains of 42 dB and output powers of 71 mW (+18.5 dBm) have been observed with a single DPL. Bidirectional pumping with two DPLs has yielded an output power of 130 mW (+21 dBm)     

Coherence Cloning Using Semiconductor Laser Optical Phase-Lock Loops

We demonstrate the concept of coherence cloning where the coherence properties of a high-quality spectrally stabilized fiber laser are transferred to a commercially available high-power DFB semiconductor laser (SCL) using an optical phase-lock loop. The lineshapes and frequency noise spectra of the fiber laser and the free-running and phase-locked SCL are measured and compared. The bandwidth of coherence cloning is limited by physical factors such as the laser frequency modulation response and the loop propagation delay. The effect of this limited bandwidth on the laser field and on self-heterodyne interferometric measurements are analyzed.      

光纤传感技术用于铁轨温度监测的研究

对光纤喇曼散射技术用于铁轨温度监测的方法进行了理论和实验研究。采用大功率半导体脉冲激光器为泵浦光源和背向散射法对光纤中的背向喇曼散射（斯托克斯散射和反斯托克斯散射）进行测量。缠绕式光纤传感器模式中采用结果表明，该方法对采用传统方法难以实现的铁轨温度进行监测是可行的，且具有结构简单、成本低廉以及与结构兼容性好的优点。     

基于SESAM的全光纤被动锁模光纤激光器

研究实现了一种主振荡功率放大（MOPA）结构的高功率全光纤皮秒级被动锁模掺镱（Yb3+）光纤激光器。种子源为基于半导体可饱和吸收镜（SESAM）的锁模光纤激光器,其为线性腔结构,输出功率为5.97 mW;预放大级采用单模掺镱光纤进行放大,之后经过4倍重复频率倍增系统和两级双包层掺镱光纤放大器,最终实现了平均功率74.3 W,中心波长1063.4 nm,脉冲宽度7.0 ps,重复频率68 MHz的锁模脉冲激光输出。实验中通过对种子光的处理和光纤长度的控制,未出现受激布里渊散射（SBS）、受激拉曼散射（SRS）等非线性效应。     

Continuous-Wave and Passively Mode-Locked Yb:GYSO Lasers Pumped by Diode Lasers

We report both continuous-wave and passively mode-locked laser actions in a Yb³⁺-doped gadolinium yttrium oxyorthosilicate Yb:GdYSiO₅ (Yb:GYSO) crystal. Continuous-wave (CW) laser operations were compared under different pump conditions with high-power diodes of different wavelengths and fiber cores. CW mode-locking was obtained with a semiconductor saturable absorber mirror.     

Characterization of Fabry–Perot laser diodes injection locked by spectrum sliced ASE noise in WDM-PON

We experimentally evaluate the performance of Fabry–Perot laser diodes (FPLDs) injection locked by spectrum sliced amplified spontaneous emission (ASE) noise for transmission at 1.25 Gb/s. We characterize the injection locked FPLDs in terms of front-facet reflectivity, operation temperature, bias current and injection locked mode location. Experiment results show that the FPLD performance is strongly dependent on the front-facet reflectivity. Therefore a reasonable range of front-facet reflectivity for FPLDs is recommended. Operating the lasers at low temperature has better receiver sensitivity, while operating at high temperature has slightly broader operation range for injected ASE power. There is an optimal bias for a given injection power and the operation range for bias current is increased for higher injection power. Injection locked mode location also affects the performance of FPLDs.     

光纤耦合模块中光纤焊接技术的研究

大功率半导体激光器列阵的光纤耦合模块对光纤焊接的要求很高,在焊接避免使用有机粘接剂和有助焊剂的金属焊膏,因为其在激光器工作时易挥发出有机物质。这些有机物会污染激光器腔面,致使激光器工作时腔面温度过高。附着在腔面的有机物就会被碳化,影响激光器的出光率,甚至还会导致激光器烧毁。文章介绍用电场辅助焊接的方法,使光纤在硅片的V型槽中固定,在焊接中不使用助焊剂和有机粘接剂,取得了良好效果,减少了激光器腔面的污染,从而提高了半导体激光器光纤耦合模块的寿命。测试结果表明,剪切强度最大可达35MPa。     

用于光纤传输系统的半导体激光放大器

本文主要介绍用于光纤传输系统的行波半导体激光放大器(TWSLA)。首先描述 TWSLA 的激光器刻面抗反射(AR)涂层的特性,然后描述半导体激光放大器(SLA)的重要特性,如小信号增益、信号增益饱和及噪声特性,最后讨论了 TWSLA 的结构设计。     

Spectral investigation of multimode fiber Bragg grating based external-cavity semiconductor lasers

The output spectra of external-cavity semiconductor lasers (ECSLs) formed by using different antireflection (AR) coated laser diodes (LDs) with multimode fiber Bragg gratings (MMFBGs), are studied systematically. It is found that the side mode suppression ratio (SMSR) of the output spectra of ECSL is dependent on the relative position of the Bragg wavelength and the intracavity modes of the LD, and this effect is more apparent when the reflectivity of AR coating of LD is increased. Numerical simulations are provided to explain the experimental observations. Furthermore, the requirements of wavelength locking of ECSLs with MMFBGs are found to be different from those with single-mode fiber Bragg gratings (SMFBGs). The conditions of wavelength locking of the MMFBG-based ECSLs in terms of gain margin between the material gain peak and the gain corresponding to the selected Bragg wavelength, reflectivity of AR coating of LD and reflectivities of the Bragg wavelengths of MMFBG are comprehensively investigated, and compared with the experimental results.     

大功率半导体激光束非球面准直系统的优化设计

为实现空间激光束的远距离传输,利用矢量折射定理研究了大功率半导体激光器发散光束经非球面、非轴对称准直系统的光传输特性。对空间光线传输得出了矩阵传递公式,并针对大功率线源半导体激光器的发散光束进行了高精度的准直优化设计。为实现对激光束的进一步准直,利用光学设计软件CODE-V设计了卡塞格伦光学天线。利用两点法对发散角进行了实验测试,结果表明优化设计的准直系统发散角为1.924 mrad,经光学天线进一步准直后的发散角为96.2μrad。本空间光线追迹方法对复杂光学系统的精确计算具有一定参考意义,所设计的大功率线源激光束准直系统能广泛应用于远距离激光通信系统中。     

瓦级输出全光纤结构2.0μm掺铥皮秒脉冲光纤激光器

研制了高功率全光纤结构2μm波段掺铥皮秒脉冲光纤激光器。该激光器采用了主振荡功率放大(MOPA)结构设计,种子源采用790nm的多模半导体激光器作为抽运源、双包层掺铥光纤作为激光增益介质、半导体可饱和吸收镜(SESAM)作为锁模器件,从而实现了重复频率为10.4MHz的皮秒激光脉冲输出,其最大平均输出功率为15mW。种子源经过一级掺铥光纤放大器后,获得了1.1W高平均功率输出,相应的单脉冲能量高达105nJ,激光脉冲宽度为9ps,峰值功率为11.6kW。此时测得激光脉冲的中心波长为1963nm,3dB光谱带宽为0.5nm。     

一种采用半导体致冷的集成大功率LED

介绍了一种采用半导体致冷技术散热的集成大功率发光二极管(LED),这种利用珀尔贴效应设计的大功率LED散热封装结构,不但可以从根本上解决大功率集成LED器件的散热问题,还可以使LED器件在高温、震荡等恶劣环境中正常工作.这样,既可拓宽LED的运用领域,又能有效延长大功率LED的寿命.采用该封装技术封装的白光LED,发光稳定,光衰小,寿命长.     

半导体激光器散热技术研究及进展

在半导体大功率激光器的各种关键技术中,散热问题的解决是一个极其关键的技术。因为半导体激光器能产生很高的峰值功率,这些器件的电光转换效率为40%~50%,即所输入的电能50%~60%都转换为热能。在管芯焊接的地方产生的热流量大约为1KW.cm-2。这种热负载是限制激光器正常工作的关键因素。半导体激光器列阵与叠阵散热问题解决会直接关系到激光器的使用寿命,导致激光器有源区温度的迅速提高,从而引起激光器的光学灾变,甚至烧毁半导体激光器。大功率激光器列阵及叠阵在高功率的二极管泵浦固态激光器(DPSSL)系统中有很大的应用,市场发展潜力很大。因此,有必要发展大功率激光器列阵及叠阵。随着大功率激光器列阵及叠阵的迅速发展,与其有关的关键技术也应该加以研究。