一种LTCC叠层耦合馈电圆极化微带天线的设计

设计了一种低温共烧陶瓷(LTCC)低剖面圆极化叠层耦合微带贴片天线.该天线采用层叠结构,在辐射基板正面采用分形的辐射贴片来降低天线尺寸并拓展带宽;在馈电层基板正面开“十字”槽,在其反面通过使用威尔金森功分器加移相器网络对“十字”槽馈电,使得耦合馈电端口的正交电场相位差90°来实现微带天线的圆极化.该天线设计剖面厚度仅3 mm.仿真结果显示该天线工作于1.268 GHz时,实现阻抗带宽超过60 MHz,天线的轴比小于1.5 dB且增益达到5 dB.     

一种小型化宽带圆极化微带天线的设计

设计并加工了一种采用同轴背馈方式馈电的小型化宽带圆极化微带天线。针对单点馈电微带天线轴比带宽窄的问题,通过增加馈电网络对天线辐射贴片进行双点馈电以展宽轴比带宽,得到了良好的效果。馈电网络根据带状线理论设计,利用U形接地板巧妙地实现了宽带天线的结构小型化。通过对辐射贴片的双点馈电获得了令人满意的电压驻波比带宽和良好的圆极化性能。通过仿真和实际测试表明,该天线VSWR≤2的带宽达到了30％,3dB圆极化带宽约为26％,同时频带内天线的增益达到4dB。     

一种新型单馈点宽带圆极化微带天线的设计

介绍了一种新型单层单贴片圆极化微带天线。该天线采用同轴线单点馈电,通过在圆形贴片上开C型缝的方法实现圆极化辐射并同时展宽了天线的阻抗带宽。仿真结果显示,该新型天线工作于C波段时,3dB轴比带宽为2.6%（124 MHz）,VSWR〈2的阻抗带宽达到10%（477 MHz）。证明了在贴片上开C型缝是展宽带宽和实现圆极化的有效方法。     

圆极化微带贴片天线辐射和散射特性研究

提出了一种改进的宽带圆极化微带天线。该天线采用单端口、共面波导馈电。通过仿真优化,获得了32.7%的圆极化轴比带宽(AR<3dB),和47.6%的阻抗带宽(VSWR<2.0)。测量天线样机的阻抗带宽为44.4%,较好地吻合了仿真计算结果。最后,以设计天线为例,研究了圆极化微带贴片天线的辐射特性和散射特性,为圆极化天线雷达截面减缩技术打下了良好的理论和实验基础。     

基于SP馈电网络的超宽带圆极化天线设计

提出了一种基于顺序相移(SP)馈电网络的宽轴比圆极化微带阵列天线。该天线通过将四个相同的圆形贴片辐射器连接在SP馈电网络的输出端,形成2×2微带阵列天线以实现圆极化性能。为保持馈电网络的紧凑性和圆形贴片辐射器的宽带特性,设计了一种不规则局部接地的方法。为获得天线的定向辐射并提高增益,在介质基板下方7.4 mm处设置一金属反射板。经过HFSS仿真软件优化分析,所提出天线的总尺寸为65 mm×65 mm×8 mm,小于-10 dB阻抗带宽为5～8.6 GHz(52%),3 dB轴比带宽为5.72～8.16 GHz(35%),在圆极化工作频率范围内增益可达10～12 dB。对所提出天线进行实物加工与测试,测试结果和仿真结果较吻合。     

Ka频段宽带圆极化微带天线

面向Ka频段高通量卫星对天线的需求,设计了一种Ka频段宽带圆极化微带天线. 天线单元主要由圆形辐射贴片和缝隙耦合馈电结构组成,通过两个类T形缝隙结合实现宽带圆极化. 天线仅有三层金属层,结构简单. 仿真结果显示,天线单元的相对阻抗带宽为31.5%（25.1～34.5 GHz）,相对3 dB轴比带宽为20.3%（26.5～32.5 GHz）. 由于单元尺寸较小,不便于对其性能进行验证,因此利用该天线单元组成2×2天线阵列,并进行加工测试. 仿真与试验结果表明,天线阵列阻抗带宽以及3 dB轴比带宽可以覆盖25.6～33.1 GHz频率范围,实测结果与仿真结果一致性良好.     

超宽频带圆极化微带天线阵列的设计

提出了一种多层结构的宽带圆极化辐射单元,该单元采用上下2个贴片切角和空气层的层叠结构,实现了天线的宽带圆极化和宽带匹配特性.在此基础上,利用圆极化天线阵的宽带馈电技术,设计了一种超宽频带四元组合圆极化微带天线阵.经过仿真计算,天线工作于C波段时,阻抗带宽和3 dB轴比带宽分别达到了41%(VSWR<2)和34%,其带宽对一般的圆极化微带天线有大幅度的增加.该超宽频带的圆极化天线在通信、雷达等领域的应用前景相当广阔.     

具有二次Koch分形边界的圆极化微带天线

设计了一种单馈点圆极化微带天线。微带贴片采用二次Koch分形边界的贴片结构,通过底馈方法激励起两个相互正交的简并模实现圆极化;采用CSTMicrowaveStudio@软件进行了仿真,其结果表明,在微带贴片的对角线上适当位置用探针馈电,可以实现圆极化辐射。对具有介质损耗的天线进行了仿真,结果与理想介质的差异较大。设计了一个右旋圆极化微带天线,并进行了测试。该天线工作于1．575GHz;VSWR小于2的阻抗带宽为51MHz;轴比为4dB;增益为3．8dB;贴片尺寸为42．4mm×42．4mm,可以用作GPS天线。     

一种三馈圆极化微带天线的设计与制作

提出了一种应用于无线局域网（WLAN）通信的三馈圆极化微带天线。天线在2300～2600MHz频带内实现圆极化辐射。天线馈电网络采用三功分馈电,增加了轴比带宽;馈电网络和附加的寄生贴片展宽了阻抗带宽;延伸天线介质衬底增大了波束宽度。仿真与实测结果吻合良好。测量结果表明,天线的阻抗带宽达到46.8%（VSWR〈2）,轴比带宽达到12.2%（AR〈3dB）。     

S 波段宽带圆极化微带天线设计

提出了一种S 波段宽带圆极化微带天线。该天线采用切角方形贴片实现圆极化辐射,利用差分馈电抑制高次模改善轴比,通过贴片上开双十字槽和增加空气层扩展带宽。矩形贴片尺寸为38mm×38mm,天线高度为14.7mm。测试结果表明该天线在实现宽带工作的同时具有良好的圆极化特性,同时满足反射系数S11≤-10dB 和轴比AR≤6dB 的有效带宽为22.3%。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.