磁控溅射制备TiCN复合膜的微结构与性能

通过磁控溅射技术制备一系列不同石墨靶功率的TiCN复合膜。分别利用X射线衍射仪、纳米压痕仪和高温摩擦磨损仪研究薄膜的微观结构、力学性能及室温和高温摩擦磨损性能。结果表明:随着石墨靶功率的增加,TiCN(111)峰逐渐宽化,晶粒尺寸逐渐减小,薄膜最后接近非晶结构。薄膜的硬度与弹性模量呈先增大后减小的趋势,在石墨靶功率为90 W时薄膜的硬度和弹性模量最大,分别为28.2和230 GPa。随着石墨靶功率的增加,室温下TiCN复合膜的摩擦因数逐渐减小,TiCN复合膜的耐磨性能明显提高。当环境温度升高到300~500℃时,TiCN薄膜的摩擦因数明显增大。TiCN复合膜的摩擦磨损性能受薄膜微观结构、空气中的水蒸气和氧气及环境温度等一系列因素的影响。     

Zn靶与掺铝ZnO靶共溅射制备ZnO:Al薄膜及其性能

采用Zn靶和ZnO(掺2%Al2O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜,即ZnO:Al透明导电薄膜,研究Zn靶溅射功率(0～90 W)和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学性能的影响。结果表明:按双靶共溅射工艺制备的ZnO:Al薄膜的晶体结构均为六角纤锌矿结构,且随着Zn靶溅射功率的增加,薄膜的结晶质量呈现出先改善后变差的规律,薄膜中的载流子浓度逐渐升高,电阻率逐渐降低,而薄膜的光学性能受其影响不大;随着衬底温度的升高,薄膜的结晶性能得到改善,薄膜的可见光透过率增强,电阻率降低。     

电气石衬底温度对ZnO薄膜的结晶特征和光学特性的影响

利用超声雾化热解技术 (USP) 在不同温度的电气石和玻璃衬底上生长ZnO纳米片状薄膜。结构研究表明晶体为六方纤锌矿多晶结构。衬底温度越高,Raman特征峰越强,XRD结果给出（002）优势定向越明显,晶体结晶性能越好,晶粒尺寸越大。SEM图像显示片状ZnO晶体沿平行衬底方向叠加形成花状晶柱的微观形貌,沉积温度越高,晶柱宽度越大。UV-Vis表明电气石衬底上ZnO吸收峰强度高于玻璃衬底,最大吸收峰位置发生红移,高温下移动更大。     

TiVCN复合膜的微结构、力学性能与摩擦磨损性能研究

采用多靶磁控溅射技水,分别利用不同V靶功率和石墨靶功率制备一系列不同V含量和C含量的TiVN和TiVCN复合膜.利用X射线衍射仪、纳米压痕仪、高温摩擦磨损仪研究了TiVN和TiVCN复合膜的微结构、力学性能及室温和高温摩擦磨损性能.研究表明,当V靶功率为60 W时,TiVN薄膜的硬度达到最大值,为25.02 GPa.在此基础上逐渐加入C元素,当石墨靶功率为20 W时,TiVCN薄膜的硬度达到最大值,为28.51 GPa.当石墨靶功率进一步增加,薄膜的硬度值开始逐渐降低.室温下,随着石墨靶功率的增加,TiVCN薄膜的摩擦系数逐渐减小.高温下,TiVCN复合膜的摩擦系数随着温度的升高先增加后减小,在700℃时获得最小值,当温度继续升高摩擦系数又增加.讨论了高温下TiVCN复合膜Magneli相的作用和自适应机制.     

基于电气石衬底的沉积温度对ZnO薄膜结晶和光学特性的影响（英文）

利用超声雾化热解技术(USP)在不同温度的电气石和玻璃衬底上生长ZnO纳米片状薄膜。结构研究表明晶体为六方纤锌矿多晶结构。衬底温度越高,Raman特征峰越强,XRD结果给出(002)优势定向越明显,晶体结晶性能越好,晶粒尺寸越大。SEM图像显示片状ZnO晶体沿平行衬底方向叠加形成花状晶柱的微观形貌,沉积温度越高,晶柱宽度越大。UV-Vis表明电气石衬底上ZnO吸收峰强度高于玻璃衬底,最大吸收峰位置发生红移,高温下移动更大。     

金属含量对Co-TiO2纳米颗粒复合薄膜微观结构及其性能的影响

目的使Co-TiO_2纳米颗粒复合薄膜同时具备高的磁化强度及电阻率,从而实现更好的高频软磁特性。方法通过磁控共溅射的方法,在不同金属靶功率下制备了Co-TiO_2纳米颗粒复合薄膜,并探究金属含量对薄膜的微观结构、表面形貌、电学和静态磁学性能的影响。结果薄膜中的金属颗粒被非晶态的TiO_2分散。金属含量的增加可以显著提高纳米颗粒薄膜中金属颗粒的结晶性,降低薄膜电阻率,并且通过改变金属含量,可使薄膜逐渐从超顺磁态向铁磁态转变,达到精确调控纳米颗粒复合薄膜的磁学和电学性能的目的。结论在金属含量达到54%时,实现了高电阻率和高饱和磁化强度共存,有望得到具有高频软磁特性的纳米颗粒复合薄膜。     

惰性气体冷凝法制备镁纳米颗粒的工艺及机制

以纯度为99.9%的镁粉为原料,采用惰性气体冷凝法来制备镁纳米颗粒,研究了蒸发温度及沉积位置对镁纳米颗粒形貌和尺寸的影响。结果表明,蒸发温度为600℃时,在冷阱最前端得到了直径为10~50 nm的镁纳米颗粒,纳米颗粒之间相互连接呈链状形态,并且在镁纳米颗粒之间发现了镁纳米线。结果还表明,随着蒸发温度升高,得到的镁纳米颗粒尺寸增大;随着沉积位置的变化,其镁纳米颗粒尺寸也发生规律性变化。根据气/固相变理论及机制,对镁纳米颗粒的形成过程进行了解释,提出了相应的镁纳米颗粒的形成模型。     

热处理温度对TiO2结构和光学性能的影响

为探索热处理温度对纳米TiO2性能的影响,研究了不同温度下处理的纳米TiO2的光学性能和微观结构,并进行了纳米TiO2光催化性能的实验.实验表明,所用的纳米TiO2溶胶可以在紫外光照射下分解甲基紫;由于粒子纳米化导致晶格畸变,纳米TiO2粒子的结晶峰出现宽化现象;热处理温度决定纳米TiO2的结晶程度和晶体类型,同时还影响粒子的粒径和分散热处理温度越高,粒子颗粒越大,同时团聚增加;粒子纳米化导致量子尺寸效应的出现,纳米TiO2薄膜对紫外线的吸收具有"蓝移"效应;随着热处理温度的升高,"蓝移"效应减弱,TiO2薄膜的紫外吸收边出现了"温升红移"现象.     

磁控共溅射沉积Al-Al_2O_3复合膜的结构与性能

用直流(DC)和射频(RF)磁控共溅射法在硅衬底上制备Al-Al_2O_3复合膜,用射频磁控溅射Al_2O_3膜作对比。通过XPS、XRD、HRTEM、FESEM和SPM研究了Al-Al_2O_3复合膜和纯Al_2O_3膜的微观结构和表面形貌,用纳米压痕仪和材料表面性能测试仪测试了样品的显微硬度和抗摩擦磨损性能。结果表明,当射频功率PRF恒定时,Al-Al_2O_3复合膜中Al相的含量和晶粒尺寸与直流功率PDC呈正比关系,Al的加入使Al-Al_2O_3复合膜中非晶态的Al_2O_3颗粒细化,相比纯Al_2O_3膜,表面粗糙度明显降低,并对复合膜力学性能产生影响。Al-Al_2O_3复合膜的硬度高于纯Al_2O_3膜,并具有更加优异的抗摩擦磨损性。直流功率PDC=50 W时,Al-Al_2O_3复合膜综合性能最佳,硬度达到14.4 GPa,摩擦因数低至0.15。     

多弧离子镀制备TiN／Cu纳米复合超硬膜的工艺研究

采用多弧离子镀制备了TiN/Cu纳米复合膜,通过设计Cu靶的开启方案对涂层进行成分调节,运用正交试验找出了影响膜层硬度的主次因素,并对膜层的成分、结构和性能进行了研究.结果表明,N2分压和Cu元素的加入是影响膜层硬度的主要因素;Cu的加入抑制了TiN晶粒的生长,且随着Cu含量的增加,TiN晶粒逐渐变小,并由柱状晶转变为等轴纳米晶;当Cu含量达到1.4at%时,制备的纳米复合膜具有47.4 GPa的超高硬度.     

(Au,Ag,Cu)/SiO_2二元金属单分散复合薄膜非线性光吸收性的Mie理论模拟

采用修正的Mie理论模拟计算了(Ag, Cu)/SiO₂, (Au, Cu)/SiO₂和(Ag, Au)/SiO₂二元单质金属纳米颗粒分散体系的理论吸收光谱. 研究发现, 二元金属纳米颗粒分别以单质金属形式存在时, 吸收光谱分别在2个波段处出现表面等离子共振吸收峰, 二元金属的相对含量影响吸收峰的峰强, 与峰位无关. 理论模拟吸收光谱与前人实验结果符合良好.     

退火温度对Au/NiO纳米颗粒复合薄膜光吸收性能的影响

采用溶胶-凝胶法制备了Au/NiO纳米颗粒复合薄膜.用X射线衍射仪、原子力显微镜以及吸收光谱表征了薄膜的结构、表面形貌以及光学性能.研究结果表明:在500 ℃或500 ℃以上温度退火后,Au/NiO薄膜中存在NiO和单质Au两相,颗粒的平均大小为23～35 nm.薄膜中Au颗粒基本呈球形,随着温度的升高,薄膜表面的粗糙度减小,Au颗粒长大,分布也较均匀.Au/NiO薄膜在波长550～610 nm范围内具有明显的表面等离子共振吸收峰,随着退火温度的升高,吸收峰先蓝移后红移,其光吸收强度逐渐减弱.     

高结晶度CrN纳米粒子掺杂的DLC薄膜的显微结构及力学性能

采用高功率脉冲磁控放电等离子体注入与沉积(HPPMS-PIID)和常规直流磁控溅射复合的方法设计制备了包含高结晶度的CrN纳米粒子的DLC薄膜,并对不同C靶电流时制备的CrN-DLC薄膜的形貌、结构及性能进行了研究.结果表明,随C靶电流的增加,薄膜中的含C量增加,在较高的C含量时形成了明显的DLC薄膜特征,掺杂相主要成分为高度200择优取向的CrN纳米晶,其最小晶粒尺寸为42.39 nm.薄膜中的C主要以C-sp~2,C-sp~3和CN-sp~3键的形式存在,sp~3键的总含量为sp~2总含量的44.8%.所制备的薄膜具有很好的膜基结合力(临界载荷Lc=66.8 N)和较高的纳米硬度(最高达24.3 GPa).     

The effect of Au/Ag ratios on surface composition and optical properties of co-sputtered alloy nanoparticles in Au–Ag:SiO2 thin films

Gold–silver alloy nanoparticles with various Au concentrations in sputtered SiO₂ thin films were synthesized by using RF reactive magnetron co-sputtering and then heat-treated in reducing Ar + H₂ atmosphere at different temperatures. The UV–visible absorption spectra of the bimetallic systems confirmed the formation of alloy nanoparticles. The optical absorption of the Au–Ag alloy nanoparticles exhibited only one plasmon resonance absorption peak located at 450 nm between the absorption bands of pure Au and Ag nanoparticles at 400 and 520 nm, respectively, for the thin films annealed at 800 °C. The maximum absorption wavelength of the surface plasmon band showed a red shift with increasing Au content. XPS results indicated that the alloys were in metallic state, and they had a greater tendency to lose electrons as compared to their corresponding monometallic state. Moreover, the positive and negative shift of the Au(4f) core-level binding energies was observed for low and high Au concentration, respectively. Also a negative shift of the Ag(3d) binding energies was increased by increasing Au concentration. Diffusion of the particles toward the surface by increasing the temperature has also been illustrated by AFM images. Based on AFM observations, we have found that the particle size reduced from 35 to 20 nm by increasing the annealing temperature from 600 to 800 °C, while particle size increased by increasing Au concentration in films. In addition, lateral force microscopy (LFM) analysis showed that the alloy particles were uniformly distributed on the surface.     

Properties of CdS nanoparticles dispersed zirconia films

Zirconia films incorporated with cadmium sulfide semiconductor nanoparticles were synthesized with the dip-coating technique in air. Amorphous and transparent films were gained on the glass substrate. ZrO₂: CdS films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), optical absorption/fluorescence spectra. The size control of CdS particles was studied. The different morphology of ZrO₂ and ZrO₂: CdS films were observed. The blue shift of absorption band of CdS and its fluorescence properties are discussed. © 2001 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.     

Preparation and optical characteristics of ZnO films by chelating sol-gel method

The effect of different annealing temperatures on the structure, morphology, and optical properties of ZnO thinf ilms prepared by the chelating sol-gel method was investigated. Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absolute ethanol, and citric acid were used as precursor, solvem, and chelating agent, respectively. The results show that ZnO films derived flom zinc-citrate have lower crystallization temperature (below 400℃),and that the crystal structure is wurtzite. The films, treated over 500℃, consist of nano-pardcles and show to be porous at 600℃. The particle size of the film increases with the increase of the annealing temperature. The largest particle size is 60 nm at 600℃. The optical transmittances related to the annealing temperatures become 90% higher in the visible range. The film shows a stalting absorption at 380 ran, and the optical band-gap of the thin film (fired at 500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).     

Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide

The effect of peak power in a high power impulse magnetron sputtering (HiPIMS) reactive deposition of TiO₂ films has been studied with respect to the deposition rate and coating properties. With increasing peak power not only the ionization of the sputtered material increases but also their energy. In order to correlate the variation in the ion energy distributions with the film properties, the phase composition, density and optical properties of the films grown with different HiPIMS-parameters have been investigated and compared to a film grown using direct current magnetron sputtering (DCMS). All experiments were performed for constant average power and pulse on time (100 W and 35 μs, respectively), different peak powers were achieved by varying the frequency of pulsing. Ion energy distributions for Ti and O and its dependence on the process conditions have been studied. It was found that films with the highest density and highest refractive index were grown under moderate HiPIMS conditions (moderate peak powers) resulting in only a small loss in mass-deposition rate compared to DCMS. It was further found that TiO₂ films with anatase and rutile phases can be grown at room temperature without substrate heating and without post-deposition annealing.     

EFFECT OF THE DEFECT STATES DENSITY ON OPTICAL BAND GAP OF CdIn2O4 THIN FILM

Transparent conducting oxides Cdln2O4 thin films were prepared by radio-frequency reactive sputtering from a Cd-ln aUoy target in Ar O2 atmosphere. By transmission spectrum and Hall measurement for different samples prepared at different substrate temperatures, it could be found that the carrier concentration would increase with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. TheoreticaUy, the paper formulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmittance of light. Since extrapolation method does not fit degenerate semiconductor materials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in Cdln2O4 films, the density of ionized impurities induced by altering substrate temperature will affect the carriers mobility.