用于白光LED的掺杂Ce-YAG荧光玻璃的研制

制备并测试了一种新的用于白光LED的掺杂Ce-YAG荧光玻璃。分别在1 300~1 500℃的空气和氮气中制备出Ce-YAG荧光玻璃。在对不同工艺条件下制得的样品进行了对比和分析的基础上,得到了较理想的制备工艺。结果表明,制得的Ce-YAG荧光玻璃被波长为465 nm(蓝色LED的波长)的光波激发,于550 nm处出现发射峰,表明该样品可应用于白光LED的封装。     

荧光粉发光层对白光LED平面光源发光特性的影响

以COB形式封装的白光LED平面光源为研究对象,系统研究了平面封装结构中荧光层对白光LED平面光源发光特性的影响.采用丝网印刷法制备了不同浓度与印刷层数的荧光层,并采用平面封装的LED蓝光光源作为激发光源,以类比法研究分析了不同发光层膜厚对白光平面光源平均照度、色坐标和光通量等参数的影响,系统地阐述了发光层对平面光源发光性能的决定因素及工艺优化条件.结果表明,当荧光粉浆料浓度为46％～53.6％,厚度为20～38 μm时,结合平面蓝光LED激发可以获得照度大、颜色纯正的白光LED光源,且白光LED平面光源具有较高的光通量值,表现出优良的光学特性.     

荧光层形状对大功率白光LED光学性能的影响

为确定荧光层形状对大功率白光LED光学性能的影响,对蓝光LED发光晶片激发黄色荧光粉产生白光的荧光涂布工艺进行了研究。分别通过大面积点胶、晶片表面点胶和保形荧光胶涂布工艺制得白光LED样品,利用积分球和角度测试机对白光LED的光学性能进行测试,结果表明,保形荧光层白光LED的色温、光强分布和发光角度等光学性能优于大面积点胶和晶片表面点胶白光LED的光学性能。     

远程荧光粉与芯片的间距对白光LED性能的影响

荧光粉转换白光LED具有高能效、低成本、长寿命等优势，广泛应用于照明领域，提高荧光粉转换白光LED的光效一直是该领域的研究热点。为了对白光LED的高性能封装进行设计优化和制备，采用模拟仿真以及实验测试相结合的方式，对LED芯片封装进行研究分析，采用了特制支架和双芯片封装，提高灯珠光效，在此基础上，改进了荧光粉涂覆工艺，提高了荧光粉激发效率，整体提高LED光效约6%，且研究了远程荧光粉与芯片的距离变化时LED的光效变化。     

白光LED封装用Ce:YAG荧光微晶玻璃的研究

以CaO-Al2O3-SiO2-Y2O3玻璃作为基础玻璃(添加微量Ce),采用不同的热处理方法制备了白光LED荧光微晶玻璃。通过对比样品的测试数据,总结出了较为理想的热处理工艺。研究表明,采用整体析晶工艺,在1150℃、热处理1h,得到了主晶相为Ce:YAG的荧光微晶玻璃。其激发波长为462.2nm,发射波长为530.2nm,适合作为白光LED的封装材料。     

基于Si衬底的功率型GaN基LED制造技术

介绍了Si衬底功率型GaN基LED芯片和封装制造技术,分析了Si衬底功率型GaN基LED芯片制造和封装工艺及关键技术,提供了产品测试数据。Si衬底LED芯片制备采用上下电极垂直结构与Ag反射镜工艺,封装采用仿流明大功率封装,封装后白光LED光通量达80 lm,光效达70 lm/W,产品已达商品化。与蓝宝石和SiC衬底技术路线相比,Si衬底LED芯片具有原创技术产权,可销往任何国家而不受国际专利的限制。产品抗静电性能好,寿命长,可承受的电流密度高,具有单引线垂直结构,器件封装工艺简单,而且生产效率高,成本低廉。其应用前景广阔,是值得大力发展的一门新技术。     

粉浆法制备平面荧光粉涂层白光LED的技术改进

基于粉浆法制备白光LED能得到厚度可控的荧光粉层,改善了白光LED的均匀性.由于芯片长时间工作时表面的发热以及回流焊时的瞬间高温环境,聚乙烯醇(PVA)感光胶的颜色容易发生改变,影响了白光LED光效的稳定性.本文采用等离子体去胶,实验结果表明,通过该方法能有效去除感光胶,处理后的LED不会因为长时间工作荧光粉表面涂层的...     

高光效LED灯丝球泡灯的光学性能研究

基于板上芯片(COB)封装技术,提出了一种360°出光的新型发光二极管(LED)灯丝球泡灯,其封装基板采用透明基板.研究了不同封装材料及芯片对其LED光通量、光效和色温的影响.首先介绍了LED灯丝球泡灯的结构、优点,然后分析了影响LED光学性能的因素,最后进行相关性能测试.测得采用玻璃/蓝宝石基板封装的LED灯丝的光通量分别为467.29和471.69 lm;光效分别为110.06和111.79lm/W;显色指数分别为84.1和81.9.测试结果表明,采用透明基板封装的LED灯丝球泡灯不仅能有效调节色温,而且能显著提高LED的光通量、光效和显色指数.     

COB白光LED的光提取效率研究

针对LED高光效、高显色指数的要求,在分析LED光学性能的基础上,采用板上芯片(COB,Chip on Board)技术研究了表面涂覆硅胶量对COB白光LED的光通量、光效、色温和显色指数的影响,并提出一种高光效、高显色指数、低色温的白光LED封装方案,提高了COB白光LED的出光效率,实现了特定的光学分布,最终实现14 W COB封装结构下的白光LED,在电流密度为30 A/cm2时,其色温、显色指数及光效分别为4 900 K、82和125 lm/W.     

YAG:Ce~(3+)玻璃陶瓷白光LED的发光特性

用化学共沉淀法制备掺铈钇铝石榴石(YAG:Ce3+)前驱体,以B2O3-Al2O3-SiO2-Na2O为玻璃基质制作Ce3+掺杂YAG玻璃陶瓷,并封装成玻璃陶瓷白光发光二极管(LED)。改变玻璃陶瓷基片厚度和外形,测量玻璃陶瓷白光LED的光电色参数,并与常规涂敷YAG荧光粉方法制作的白光LED进行对照比较。结果表明,玻璃陶瓷白光LED发射光谱波形与普通白光LED光谱基本一致。玻璃陶瓷基片从0.50mm变化到0.90mm厚时,相关色温(CCT)从4 182 K增加到8862K。0.60mm厚平板玻璃陶瓷基片封装成的白光LED荧光能量转换效率约为20%,中心CCT为6396K,-85°和+85°视角CCT分别为5921K和5898K;而平凸玻璃陶瓷基片封装成的白光LED,-85°和+85°视角CCT变化范围可控制在150K范围内。     

Status and prospects for phosphor-based white LED packaging

The status and prospects for high-power, phosphor-based white light-emitting diode (LED) pack-aging have been presented. A system view for packaging design is proposed to address packaging issues. Four aspects of packaging are reviewed: optical control, thermal management, reliability and cost. Phosphor materials play the most important role in light extraction and color control. The conformal coating method improves the spatial color distribution (SCD) of LEDs. High refractive index (RI) encapsulants with high transmittance and modified surface morphology can enhance light extraction. Multi-phosphor-based packaging can realize the control of correlated color temperature (CCT) with high color rendering index (CRI). Effective thermal management can dissipate heat rapidly and reduce thermal stress caused by the mismatch of the coefficient of thermal expansion (CTE). Chip-on-board (COB) technology with a multi-layer ceramic substrate is the most promising method for high-power LED packaging. Low junction temperature will improve the reliability and provide longer life. Advanced processes, precise fabrication and careful operation are essential for high reliability LEDs. Cost is one of the biggest obstacles for the penetration of white LEDs into the market for general illumination products. Mass production in terms of CoB, system in packaging (SIP), 3D packaging and wafer level packaging (WLP) can reduce the cost significantly, especially when chip cost is lowered by using a large wafer size.     

基于COB技术的LED散热性能分析

当前,散热问题已成为影响LED寿命、光效、光衰和色温等技术参数的重要因素。文章在综合分析散热技术和LED封装对散热性能影响的基础上,利用COB(板上芯片)封装技术,将LED芯片直接封装在铝基板上,研制成了一种基于COB封装技术的LED。与SMD封装LED进行比较,分析了其散热性能。分析结果表明:基于COB封装技术的LED减少了LED器件的结构热阻和接触热阻,使其具有良好的散热性能。     

Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

A novel packaging configuration for high-power phosphor-converting white light-emitting diodes (LEDs) application is reported. In this packaging configuration, a thermal-isolated encapsulant layer was used to separate the phosphor coating layer from the LED chip and the submount. Experimental and finite-element method simulation results proved that this thermal management can prevent the heat of LED chip from transferring to the phosphor coating layer. The surface temperature of the phosphor coating layer is a 16.8degC lower than that of the conventional packaging at 500-mA driver current for 1-mm power GaN-based LED chip. Experimental results also show that this packaging configuration can improve the light-emitting power performance and color characteristics stability of the white LED, especially under high current operating condition.     

大功率白光LED封装设计与研究进展

封装设计、材料和结构的不断创新使发光二极管(LED)性能不断提高.从光学、热学、电学、机械、可靠性等方面,详细评述了大功率白光LED封装的设计和研究进展,并对封装材料和工艺进行了具体介绍.提出LED的封装设计应与芯片设计同时进行,并且需要对光、热、电、结构等性能统一考虑.在封装过程中,虽然材料(散热基板、荧光粉、灌封胶)选择很重要,但封装工艺(界面热阻、封装应力)对LED光效和可靠性影响也很大.     

High-Brightness InGaN–GaN Power Flip-Chip LEDs

We report the fabrication of InGaN–GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.      

InGaN/GaN多量子阱纳米线发光二极管制备及研究

用SiO2纳米图形层作为模板在以蓝宝石为衬底的n-GaN单晶层上制备了InGaN/GaN多量子阱纳米线,并成功实现了其发光二极管器件(LED).场发射扫描电子显微镜(FESEM)的测量结果表明,InGaN/GaN多量子阱纳米线具有光滑的表面形貌和三角形的剖面结构.室温下阴极射线荧光谱(CL)的测试发现了位于461 nm...     

Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures

We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25 V smaller forward voltage and an 8.7 Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2.0 when measured before and after packaging, respectively. The improved electrical and optical output performances of flip-chip LEDs were quantitatively analyzed in terms of device resistance and ray optics, respectively.     

COB封装对LED光学性能影响的研究

针对LED高光效、低功耗的要求,文章在分析LED光学性能的基础上,采用了COB(ChipOn Board)即板上芯片封装技术。研究了不同封装工艺和材料,分析比较其对LED光通量、光效和色温的影响。研究首先介绍COB封装的结构、优点及其实用性,然后分析影响LED光学性能的因素,最后进行测试。在实验过程中,发现COB封装结构除了具有保护芯片的功能外,还可以提高出光效率,并实现特定的光学分布。实验结果表明:文章提出的封装工艺对于提高光通量和光效、调节色温有良好的效果。     

基于多基色LED和OFDM的可见光通信系统

目前,基于单白光LED的光正交频分复用(OFDM)系 统结构的频谱效率(SE)成倍低于传统OFDM系统,为了提高SE,对多基色LED的宽带通信潜能进行了研究,在综合分析经典光OFDM 调制技术的基础 上,提出一种基于多基色LED和OFDM的可见光通信(VLC)系统。系统发射机采用 M基色LED作为发射天线, 并采用OFDM对二进制数据进行调制,调制后的多个复信号再通过二维复信号转 M维实向量信号的方法 和极性编码方法,驱动M基色LED发出复合光信号,接收机采用M 个前端设置有不同颜色滤波器的光 电二极管(PD)接收叠加复合光信号。仿真结果表明,在相同误符号率情况下,本文系统在加 性高斯白噪声环境和 实测信道条件下比经典的非对称限幅光OFDM(ACO-OFDM)的VLC系统大约有2dB的信噪比(SNR)增益。     

Optical and Structural Properties of InGaN–AlGaN Ultraviolet Light-Emitting Diodes

We fabricated and investigated the performances of InGaN–AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output–powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.