1/4 W continuous-wave Q band Gunn oscillator

C.W. Gunn devices using integral-heatsink techniques have been produced with a power output of more than ? W at 31.5 GHz. Conversion efficiencies of up to 4.6% are reported. A tuning range greater than 8 GHz has been obtained.     

毫米波脉冲体效应二极管

报导了脉冲输出大于1W的8mm体效应二极管，给出了器件结构和参数设计及其电参数研究。器件最佳性能为36．5GHz下，脉冲输出功率1．5W。用于8mm脉冲锁相放大器中，获得了增益13dB，输出大于0．66W，带宽大于1．5GHz的结果。     

X-band performance of GaAs power f.e.t.s

The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.     

S波段连续波输出功率20W的SiC MESFET

采用自主开发的SiC外延材料和工艺技术,相继实现了S波段连续波状态下输出功率瓦级和10 W的SiC MESFET。经过版图设计的改进和工艺条件的优化,取得了S波段连续波状态下输出功率大于20 W,功率增益大于12 dB,功率附加效率大于30%的SiC MESFET研制结果。器件的功率增益和输出功率较以往的研制结果均得到显著提高,器件的反向截止泄漏电流也大幅度降低。由于器件未采用内匹配结构,其体积也比一般内匹配器件的体积小。研制结果为多胞合成实现更大功率输出的器件创造了条件,也使S波段连续波大功率输出器件的研制水平上了一个新的台阶。     

S波段0.3W AlGaAs/GaAs HBT功率管

采用标准的湿法刻蚀工艺研制出了S波段工作的非自对准AlGaAs/GaAs异质结双极晶体管．对于总面积为8×2μm×10μm的HBT器件,测得其直流电流增益大于10,电流增益截止频率fT大于20GHz,最高振荡频率fmax大于30GHz．连续波功率输出为0.3W,峰值功率附加效率41％．     

1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-addedefficiency

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 μm². 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band     

管板式横流10kWCO_2激光器的实验研究

本文叙述一台具有重复脉冲辅助放电的横向流动连续CO_2激光器。实验研究了放电特性,并给出激光器增益和输出功率的实验和计算结果。激光器最大输出功率12600W。在输出功率10200W条件下一次充气连续运行超过8h,功率不稳定度±1.5％。     

High-power GaAs FET's prepared by ion implantation

High-power GaAs FET's have been developed by using ion implantation to form channel layers and n⁺ohmic contact regions. The burn-out characteristics have been improved by introducing n⁺regions with high surface carrier concentration. The source-drain burnout voltage has been found to be more than 40 V. The distributions of saturated source-drain current (Idss) and RF output power of the devices have been found much more uniform than those of power GaAs FET's prepared by metalorganic chemical vapor deposition (MOCVD). Multichip operation of the FET's has demonstrated an excellent power combining efficiency due to the good uniformity among the chips. The two-chip device (total gate width WG= 14.4 mm) has delivered 5 W at 10 GHz with 4-dB gain and 23-percent power added efficiency (ηadd). The four-chip device (WG= 28.8 mm) has given 10 W at 8 GHz (gain = 4.5 dB, ηadd= 23 percent). The four-chip device (WG= 48 mm) has developed 15 W at 5 GHz (gain = 8 dB, ηadd= 30 percent).     

High modulation efficiency and high power 1060 nm tapered lasers with separate contacts

A high direct optical modulation amplitude of more than 1.6 W, modulation efficiencies of 20 W/A at 700 Mbit/s and 50 W/A for quasistatic modulation, and a very high optical extinction ratio of 19 dB have been demonstrated in custom-designed gain guided tapered lasers emitting at 1060 nm. The devices were fabricated with split contacts, allowing the separate injection of the ridge waveguide and tapered sections. The modulation of a large output power with low modulating current was achieved by modulating the current injected into the ridge waveguide section of the device.     

High-efficiency continuous oscillations in silicon IMPATT diodes below the transit-time frequency

C.W. room-temperature operation of silicon IMPATT diodes at the first subharmonic of the transit-time frequency has been observed in a high-efficiency mode. Efficiencies as high as 8.8% at 5GHz with 1.2 Wc.w. have been achieved with current densities no more than 1480A/cm2.     

Sensitive GaAlAs/GaAs wide-gap emitter phototransistor for high current applications

GaAlAs/GaAs bipolar phototransistors involving a wide gap emitter have been fabricated which exhibit high current gain with corresponding external quantum efficiencies of the order of 5000. The devices provide a power switching capability of more than 1 W.     

A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications

GaAs FET amplifier modules for 20 GHz band satellite communications have been developed using newly developed power FETs. The deep recess gate structure was adopted in the power FET, which improved both power output capability and power gain. Power added efficiency of 22 percent with more than 1 W power output has been achieved with 3 mm gate width FETs. The amplifier modules containing two-stage internally matched FET's can be hermetically sealed in metal packages. The modules had 8.4-8.9 dB linear gain in the 17.7-18.8 GHz band and 7.9-8.4 dB linear gain in the 18.5-19.6 GHz band. The power output at 1 dB gain compression point was more than 0.5 W. The third-order intermodulation distortion ratio was 81-83 dB at 18.2 GHz and 77-80 dB at 18.9 GHz, when individual output signal power was -4 dBm.     

High-power pulsed beam-lead IMPATT diodes for millimetre waves

IMPATT diodes with technologically integrated beam-leads were fabricated. Since no diode bonding is required, a total diode thickness of less than 2 ?m can be realised reproducibly. With optimum device packages, peak pulse output powers of more than 10 W at 70 GHz have been achieved from silicon single-drift IMPATT diodes.     

I band (8-10 GHz) TRAPATT-diode sources

The feasibility of a high-pulsed-power I band source using both n-type and p-type TRAPATT diodes has been demonstrated. Deep-diffused n-type diodes have generated more than 100 W in the I band.     

新一代工业用高功率CO2激光器

本文综合介绍和评述了新一代工业用高功率CO2激光器, 它可以采用高频、射频或微波放电的激励方式。这些激光器的放电功率密度可大于30 W／cm2, 因此其结构紧凑、重量轻, 稳定性和可靠性更能满足工业生产的要求。     

Single-diode 0.5kW TRAPATT oscillator

A lumped-element TRAPATT-diode oscillator capable of more than 0.5 kW output power from a single diode chip is described. Peak power of 575 W with 23% efficiency and a maximum efficiency of 28% at 0.5 kW output power have been consistently obtained at approximately 1 GHz.     

High-power InP MISFETs

InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.     

X波段功率异质结双极晶体管

讨论了 X波段功率异质结双极晶体管 (HBT)的设计 ,介绍了器件研制的工艺过程及测试结果。研制的器件在 X波段功率输出大于 5 W,功率密度达到 2 .5 W/mm。采用 76mm圆片工艺制作 ,芯片的 DC成品率高于 80 %。     

High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources

915 nm quantum dot lasers with temperature stable emission wavelengths have been realised for uncooled high-power applications. Broad area lasers with optimised dot geometry exhibit a thermal induced wavelength shift of 0.09 nm/K, which is 3.5 times lower than for quantum well lasers. Despite this improvement the lasers show high output powers of more than 3 W and wallplug efficiencies of 55% in continuous-wave operation.     

26.5-40GHz 高效率宽带毫米波行波管高频系统仿真设计

优化高频系统慢波结构参数,分析了慢波结构的材料及T 型夹持杆对高频损耗的影响,设计了一种未加载翼片结构的双渐变螺线26.5-40GHz 40W 宽带行波管,试验测试宽频带内电子效率超过12%,采用4 级降压收集极后总效率大于37%。