基于高温超导材料的折叠交指低通滤波器设计

传统的椭圆函数低通滤波器基于半集总参数的高低阻抗线实现椭圆函数LC网络,其尺寸较大,特别是对于低截止频率的低通滤波器,难于在高温超导晶圆片有限尺寸内实现与带通滤波器的集成。提出了一种基于高温超导材料的折叠交指低通滤波器设计,其折叠交指谐振器不仅自身具有椭圆函数低通特性,能够有效抑制高次寄生通带,而且通过折叠与交指结构实现了低通滤波器的小型化,便于与带通滤波器的集成。通过电磁(EM)仿真验证了该设计的可行性与有效性。该结构非常适用于小尺寸、低频低通滤波器的设计。     

椭圆函数低通滤波器及其在微波频综中的应用

采用滤波器软件综合的方法,设计了一个椭圆函数低通滤波器.与切比雪夫低通滤波器相比,在相同阶数下,椭圆函数低通滤波器拥有更优良的带外特性和更小的尺寸.此外,还介绍了椭圆函数低通滤波器带外抑制极点的调整方法,并从微波网络入手,由于片式电感器Q值的影响,计算出实际测试的椭圆函数低通滤波器带外抑制发生恶化的程度.这种低通滤波器可广泛用于微波频率合成器和其他微波电路中.     

DDS信号发生器中椭圆低通滤波器的设计

本文基于DDS技术的基本原理,对DDS信号发生器中所用的低通滤波器进行了设计.采用了截止特性陡峭的7阶椭圆函数低通滤波器,该滤波器的3 d B截止频率为120MHz,在145MHz处的衰减为60dB,且通带内纹波小于0.2dB.通过Multisim2001仿真研究表明:其幅频特性好,具有快速的衰减性.     

基于DDS的椭圆函数低通滤波器的设计

低通滤波器是直接数字频率合成DDS的重要组成部分,其性能的好坏直接影响整个DDS的特性.提出一种基于DDS的椭圆函数低通滤波器的设计方案,该设计采用全新的归一化方法,并使用EDA软件Multisim2001进行仿真,确定了滤波器的结构,阶数,以及设里了相关参数,从而设计出截止频率为160MH:的7阶椭圆函数滤波器.该低通滤波器幅频特性良好,具有快速的衰减性.因此该设计方案可适用于不同频段、阶数、类型的滤波器设计.     

关于滤波器网絡綜合的一种方法

滤波器是无线电技术中许多设计问题的中心,可以用它来分开或组合不同频率。在阻抗匹配中也经常使用滤波器。通常需要的是两端终接电阻相等的滤波器,有时也需要一个具有阻抗变换型的低通滤波器。如在参量放大器信号回路中,需一个具有阻抗变换型的低通滤波器,而现有的设计参量往往不能满足实际要求,为此需对具体问题进行计算。本文主要讨论切比雪夫阻抗变换型的原型低通滤波器及椭圆函数低通原型滤波器的一种综合方法。采用这种综合方法,可避免解高阶代数方程。其他滤波器如高通、带通等都可在低通滤波器基础上经过适当的频率变换而得到,不必另行综合。     

一种椭圆函数微带低通滤波器的设计与实现

为克服传统微带低通滤波器结构尺寸大和过渡带衰减慢的缺点,基于椭圆函数低通滤波器原型,设计了一款结构紧凑、插损小、过渡带陡峭的高低阻抗线微带低通滤波器。给出了该滤波器结构尺寸的计算公式,并通过仿真软件ADS和HFSS对其进行了仿真优化,采用微波材料板制作出滤波器实物并进行了测试验证,实测结果与仿真结果具有较好的一致性,且验证了该设计方案的可行性。     

一种新型小型化宽阻带低通滤波器设计

对基于阶梯阻抗加载发卡型谐振器的多级椭圆函数微带滤波器进行了讨论.通过把两个谐振器用等效于电感的细微带线连接起来构成二级低通滤波器,其在阻带带宽和阻带衰减方面与单谐振器滤波器相比,取得了非常明显的改善.新设计滤波器的3dB截止频率位于2GHz,在2.5～25GHz具有小于10dB的衰减,而滤波器的面积仅等效于0.081λg×0.096λg(λg是在截止频率2GHz的导波波长),证明了此种谐振器在多级滤波器设计中的有效性.此外,为更好地理解此种滤波器工作原理,文中对单谐振单元滤波器的LC等效电路进行了提取.与其它微带低通滤波器相比,此种滤波器在小型化、宽阻带方面具有明显优势,可广泛应用于多种微波系统.     

具有最佳灵敏度的有源滤波器的综合

把作者以前叙述的两种一般的RC有源网络综合方法应用到滤波器的综合。现在叙述的第三种综合方法是把Guillemin的并联一梯形法用来实现网络的无源部份。此种方法和以前的两种方法均采用了具有最佳灵敏度的Horowitz分解,用这三种方法来实现各种二阶滤波器传递函数。设计表格包括由传递函数各项系数给出的元件值。最后,用表格设计了一个五阶椭圆函数低通滤波器。     

切比雪夫Ⅱ型模拟高通滤波器的设计及实现

提出了一种基于反相积分器的信号流图来实现切比雪夫Ⅱ型模拟高通滤波器的方法。首先,基于归一化切比雪夫Ⅱ型模拟低通滤波器极点分布的特点,推导出归一化切比雪夫Ⅱ型模拟低通滤波器零极点和转移函数的公式,得到归一化切比雪夫Ⅱ型模拟低通滤波器设计的步骤;然后,基于频率变换与逆变换,提出一种利用归一化切比雪夫Ⅱ型模拟低通滤波器来设计切比雪夫Ⅱ型模拟高通滤波器的方法;最后,给出了利用归一化切比雪夫Ⅱ型模拟低通滤波器来设计切比雪夫Ⅱ型模拟高通滤波器的实例及其实现电路。     

CSC5609开关电容低通滤波器

ＣＳＣ５６０９开关电容低通滤波器何殿华１、ＣＳＣ５６０９简介ＣＳＣ５６０９为开关电容式有源低通滤波器电路，内部包含时钟电路和七阶椭圆函数低通滤波器。该电路能够用于电话、数字通信、信号处理等领域，作为通用限带滤波电路，具有良好的特性。２、ＣＳＣ５６０９...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.