横向双模双频滤波器设计

基于横向滤波器耦合结构,采用支节加载双模谐振器,设计了中心频率位于1.57 GHz(GPS应用)与2.4GHz(WLAN应用)的双频微带滤波器。由短路支节加载双模谐振器形成第一个通带,开路支节加载双模谐振器形成第二个通带,两个谐振器被输入/输出馈线隔离,每个通带的中心频率与带宽可以单独调节。测试结果表明:两个通带内的最小插损分别为2.18,1.35 dB,3 dB带宽分别为5.2%,6.8%,回波损耗均小于16 dB,三个传输零点分别位于1.28,2.08,2.71 GHz处。该滤波器具有尺寸小、带外选择性好等优点。     

基于CRLH的小型化超宽带带通滤波器的研究

提出了基于复合左右手结构传输线(Composite Right/left-handed Structure Transmission Lines.简称CRLH TLs)的小型化超宽带带通滤波器.给出了滤波器的设计结构及其等效电路,仿真表明,该超宽带带通滤波器可在3.2～8.6 GHz的通带范围内插入损耗小于0.7 dB.回损大于17dB.带内群时延小于0.4ns.新的滤波器的尺寸约为中心波导波长的1/3.便于实现结构的小型化.     

一种具有边带陡峭特性的超窄带滤波器

应用LTCC技术,设计了一款带通滤波器。采用开口环谐振结构作为基本谐振单元,利用谐振级之间的耦合产生传输零点,实现边带抑制。给出了开口环谐振结构的等效电路分析,滤波器的通带中心频率为23.2 GHz,3-dB带宽为600 MHz,具有很窄的相对带宽,3-dB相对带宽仅为2.6%。对滤波器进行仿真和优化,结果表明,通带22.9~23.5 GHz内插损小于3 dB,低阻带10~21.1 GHz的衰减大于45 dB,高阻带25.3~40 GHz的衰减均大于30 dB。该滤波器的尺寸为4 mm×3.5 mm×0.45 mm,具有非常好的窄带特性和边带抑制特性。     

单槽双频微波带通滤波器设计与实现

在方形贴片上采用单槽线代替相互正交双槽线的方法设计出一款结构简单、紧凑的双频段带通滤波器。详细讨论了滤波器结构参数对滤波器性能的影响,并以2.45/5.2GHz双通带滤波器的设计为例,通过仿真优化得到了各结构参数,制作了相应的样品。测试结果表明：该滤波器在2.45GHz通带内回波损耗为20dB,通带内最小插损为0.9dB,相对带宽为10%;5.2GHz通带内回波损耗33.6dB,通带内最小插损为0.37dB,相对带宽为13.4%,其总体尺寸比文献中正交双槽线结构的滤波器缩小48%。     

X 波段阶梯阻抗滤波器设计

微带发夹型阶梯阻抗滤波器有尺寸小、成本低、易于集成和寄生通带可调节等特点,在微波电路中有着广泛的应用。文章设计了一个X 波段阶梯阻抗滤波器,中心频率为8.1GHz,带宽超过400MHz ,在7.9 GHz -8.3 GHz 的通带内插损优于3.5dB,带内波动小于1dB,在6.5GHz 和9GHz 处衰减大于50dB,滤波器尺寸为10mm*10mm。     

基于LTCC的超宽带巴伦滤波器小型化设计

该文设计了一种基于低温共烧陶瓷(LTCC)技术的小型化超宽带巴伦(Balun)滤波器。该巴伦滤波器由一个五阶带通滤波器和基于Marchand巴伦改进型巴伦级联组成,带通滤波器采用耦合谐振式的设计方法,设计成宽带高抑制巴伦滤波器,在二阶、三阶和四阶谐振之间创新采用电感级联的拓扑结构,使相对带宽在48%以上。巴伦输入与输出之间的耦合采用一种并联堆叠式耦合螺旋传输线,增强了传输线之间的耦合,并拓宽了巴伦的带宽。结果表明,该巴伦滤波器通带为1.71~2.76 GHz,插损均小于2.3 dB;在50~669 MHz,抑制大于35 dB;在669~1 245 MHz,抑制大于17 dB;在3 205~3 400 MHz,抑制大于27 dB;在3 400~6 000 MHz,抑制均大于30 dB。两个输出端口信号的相位差和幅度差分别为180°±15°(1 710~2 340 MHz)、180°±10°(2 500~2 760 MHz)和±1.0 dB,具有较高的通用性和良好的应用市场。     

SIR结构ACPW滤波器研究

文章提出将SIR谐振器结构应用于非对称共面波导传输线中,设计了一种新型SIR结构非对称共面波导带阻滤波器。通过四个SIR谐振单元在非对称共面波导传输线中级联,有效地改善了滤波器的插损和带宽。结果显示,本滤波器中心频率为1．8GHz,最小插损为0．4dB,相对带宽为33．3％,最大带外抑制为-60dB。具有小体积、低插损、高抑制、宽阻带、易于加工等优点。     

一种连续通带宽带双工器的研制

设计并制作了工作在2.2～2.8GHz的带状线结构3dB定向耦合器和2只通带分别为2.2～2.5GHz及2.5～2.8GHz的8阶微带发夹线结构带通滤波器,利用该耦合器和带通滤波器设计制作连续通带宽带双工器,并通过ADS进行仿真。由仿真结果可知,在2.2～2.8GHz双工器全频带内输入端口的反射系数S11均优于-17.00dB,通带2.2～2.5GHz带内插损S21最优为-2.09dB,通带2.5～2.8GHz带内插损S31为-2.53dB,其中两通带的交接点2.5GHz处插损约-6.5dB。实测结果与仿真结果基本吻合。     

C波段超宽带微型LTCC带通滤波器设计

基于低温共烧陶瓷(Low temperature co-fired ceramic,LTCC)技术设计了一款C波段超宽带、高抑制的带通滤波器,并通过LTCC技术对滤波器进行加工制作,满足了小体积、高性能、密集封装的应用需求。滤波器整体上采用了低通滤波器与高通滤波器串联的结构实现超宽通带,并引入传输零点来增加带外抑制,采用垂直叉指电容和双层螺旋电感来减少滤波器体积。最终实现的滤波器通带的中心频率为5.3 GHz,带宽为3 GHz,通带内插损小于0.8 dB,在DC～3 GHz处抑制达到了36 dB,在8～14 GHz处抑制达到了35 dB,通带回波损耗为12 dB。滤波器体积为：1.8 mm×1.0 mm×0.7 mm。     

基于CRLH TL结构的带通滤波器设计与研究

基于复合左右手传输线（CRLH TL）原理,利用微带与共面波导组合的双层介质结构,设计了一种新型带通滤波器。其等效左手电容由金属 绝缘体 金属（MIM）耦合结构提供,等效左手电感由蘑菇型零阶谐振器（MZOR）中的短路通孔实现。通过研究MZOR中U型槽长度变化对滤波器性能的影响得知,该带通滤波器具有结构紧凑,带宽较大,插入损耗较小等优点。HFSS仿真结果显示,滤波器的通带为3.4~7.2 GHz,通带内插入损耗低于-0.5 dB,回波损耗小于-11.5 dB。因此,该滤波器可应用于超宽带无线通信系统。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.