AGPS中减小首次定位时间的方法

提出了一种在有辅助信息的定位系统(AGPS)中实现快速定位的方法,同时分析了本地时间精度和伪距误差对预测准确度的影响.仿真结果表明,在RTC偏差小于27秒、预测伪距偏差小于87千米的条件下该方法能够正确的预测和定位,TTFF达到1秒量级;在RTC偏差接近一分钟、预测伪距偏差接近200千米的条件下该方法能够正确的预测和定位,TTFF达到4秒量级.相比于一般的预测伪距方法,该方法容易实现,具有一定的实用性.     

基于不同伪距初值下的RTK定位误差精度分析

为了验证不同伪距初值情况下对 RTK 定位精度的影响,本文基于长期连续的地面卫导接收机实测数据,采用原始伪距、载波相位平滑伪距以及频繁重置(固定时长 100s)载波平滑伪距三种伪距初值分别运用 RTK 浮点解以及 RTK 固定解进行定位,并将以上各种情况下的定位精度进行统计分析,并得出相应结论,即伪距初值采用载波相位平滑伪距进行 RTK 定位解算, 相比较其他两种伪距初值选取能够达到较高的定位精度和成功率。     

GPS伪距双差相对定位技术试验研究

通过差分技术能够消除 GPS 伪距中大部分公共误差，同时能够较为准确的计算出基线两端的 GPS 接收机间的相对位置关系。本文介绍了基于 GPS 伪距双差的相对定位方法，在此基础上开展了 GPS 伪距差分相对定位试验分析，比较了单频伪距双差与窄巷伪距双差的相对定位精度。试验表明，窄巷伪距双差相对定位具有更高的相对定位精度。     

浅析卫星导航接收机中的码伪距差分技术

简要论述了码伪距差分技术在卫星导航接收机中的优点，详细论述了码伪距差分定位算法模型，将码伪距差分定位与单点定位进行对比仿真，明显提高了卫星导航接收机的定位精度。     

GPS伪距导航定位解算新算法研究

为提高全球卫星定位系统(GPS)中伪距导航定位解算的精度和改善对动态目标的实时跟踪,文中提出了一种新方法,采用镜像映射法解具有病态的矛盾方程组以提高精度,以及将伪距导航定位解算方程模型转换为具有贯序输入输出数据的系统辩识模型,然后用递推最小二乘法,对所求的GPS伪距导航定位信息──接收机的三维位置参数和时钟误差参数进行动态快速实时估计.     

增强罗兰伪距定位方法研究

在罗兰C授时系统中,利用授时电文信息,可测量并计算出接收点到各发射台的伪距,建立伪距方程求解用户位置和钟差。本文主要论述了增强罗兰伪距测量和伪距定位解算方法。     

基于单差正交模型的GNSS伪距差分定位技术

全球卫星导航(Global Navigation Satellite System,GNSS)的伪距差分定位由于不需要解算整周模糊度,即使是在载波差分定位技术广泛应用在高精度差分定位的当代,伪距差分定位在辅助载波差分定位等方面依旧具有研究的意义。本文介绍了一种基于单差正交模型的伪距差分定位技术。它可以避免双差伪距所带来的观测量强相关和对参考卫星过分依赖的缺点,同时消除钟差项的影响。实验结果表明,码差分在动态定位时可以实现分米级的定位精度,可以用于辅助载波差分定位的快速解算。     

区域大气增强伪距单点定位算法及性能验证

传统的伪距单点定位模型,受限于模型噪声、轨道钟差精度和大气误差修正精度等因素,难以获得高精度的定位结果,已经无法满足现代化应用场景的需求。提出了一种区域大气增强的伪距单点定位方法,能够显著改善伪距单点定位的定位性能。算法采用精密轨道钟差产品削弱卫星轨道钟差误差,使用区域大气参数削弱对流层电离层误差,采用双频非组合模型降低观测模型噪声。实测数据的验证结果表明,区域大气增强伪距单点定位方法的定位精度均方根(RMS)在水平方向优于0.2 m,高程方向优于0.25 m,定位精度的提升非常显著,同时亚米级的伪距单点定位精度在实际工程应用中也具备重要的参考价值。     

微弱信号下基于模糊度解算的辅助式GPS接收机定位算法研究

提出了一种辅助式GPS接收机定位解算方法,基于该方法接收机不需要解调导航电文、帧同步和位同步,仅需要对GPS信号进行伪码相位测量,在获取卫星星历、卫星钟差参数等辅助信息的基础上完成定位解算.该算法在常规GPS定位算法基础上,增加伪距中模糊部分为未知数,当接收机位置坐标和接收机钟差的迭代初值误差满足一定条件时,消除了伪距中模糊度影响.然后推导了该算法的定位方程,给出了定位流程.最后仿真实验证实了该算法的有效性.     

基于故障树分析GNSS接收机伪距分层方法研究

随着全球卫星导航系统的快速发展,导航定位服务技术越来越成为人们智能生活中不可或缺的部分,特别是高精度的定位技术更是如此。本文从北斗广域分米级系统出发,针对 GNSS 接收机对不同卫星伪距间存在伪距分层现象,采用故障树分析方法,通过问题排查,提出了一种伪距偏差修正值的方法,结果显示该方法对伪距分层具有较明显弱化效果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.