基于BP神经网络的人脸识别系统研究

本文设计了一种基于BP神经网络的人脸识别系统,并对其进行了性能分析.该系统首先利用离散小波变换获取包含人脸图像大部分原始信息的低频分量,对图像数据进行降维;再由PCA算法对人脸图像进行主成分特征提取,进一步降低图像数据的处理量;最后使用经过训练后的BP神经网络对待测人脸进行分类识别.详细介绍了离散小波变换、PCA特征提取以及BP神经网络分类设计.通过系统仿真实验与分析发现:人脸特征的提取是该系统的关键;同时,由于人脸灰度信息的统计特征与有监督训练BP神经网络分类器,使该系统只在固定类别,并且光照均匀的人脸识别应用场景中具有较高的识别准确率.因此,很难在复杂环境中应用.     

基于小波变换的人脸识别技术研究

文章提出了基于小波分解与PCA变换相结合的人脸特征提取方法,首先对人脸图像进行二维小波变换,对变换后的低频分量做PCA变换以提取人脸特征,最后,使用SVM分类器进行人脸识别。为了验证方法的有效性,文章以ORL人脸库作为测试数据库,前5幅人脸作为训练样本,后5幅人脸作为测试样本,实验结果表明该方法能有效的识别处理过的人脸图像。     

基于Curvelet变换的人脸识别技术研究

提出了一种基于二代Curvelet变换的人脸识别算法,先对人脸图像预处理及Curvelet变换系数的特征提取;然后结合PCA L、DA进行降维处理;再对降维后的系数进行分类,进而对人脸进行识别。为研究表情及光照对识别率的影响,分别采用了ORL与Yale人脸数据库,将该算法与小波变换的算法进行对比。实验结果表明,该算法得到更高的识别率。     

一种光照不变的人脸识别新方法

本文研究并实现了小波变换,光照商图像与BP神经网络相结合对不同光照条件下的人脸图像进行识别的算法.运用小波变换方法对图像进行降维,运用光照商图像方法对图像进行预去光,运用BP神经网络进行人脸识别;同时讨论了BP网络输入矢量的标准化处理问题、网络隐含层神经元数选取问题,以及对Sigmoid函数和网络学习速率的改进问题.利用Yale Face Database B人脸数据库进行识别实验,结果表明,通过预去光,网络的识别率有了显著提高;本文设计的改进BP网络在与非改进网络得到相同识别率情况下,其收敛速度明显加快.     

基于PCA算法和小波包变换的人脸识别技术

在人脸识别领域,如何提取人脸特征和降低特征维数是关键.提出了一种基于小波包变换和主元分析相结合的人脸识别方法.小波包具有能够保留图像的主体信息又保留不同方向细节信息的优点.算法首先利用小波包变换,把人脸图像分解成不同尺度的低频和高频部分,提取最优基,再采用PCA方法进行人脸的识别.在ORL人脸数据库的仿真结果表明,该算法能有效提高人脸识别性能,具有较高识别率.     

云环境下基于复合混沌的加密人脸识别鲁棒算法

传统人脸识别方法的人脸数据图像数据存储在互联网上,可能会受到黑客的攻击而导致个人隐私的泄漏和数据安全问题。因此,提出一种云环境下基于复合混沌的加密人脸识别鲁棒算法。首先利用Henon映射与Tent映射产生混沌序列,再对ORL人脸数据库图像进行离散余弦变换,在变换域内对ORL人脸数据库进行加密;再结合PCA算法与BP神经网络实现人脸的识别;最后进行常规攻击、几何攻击、遮挡攻击测试其鲁棒性。实验结果表明,加密算法识别率为83%,高于未加密算法识别率81.5%,并且具有良好的加密效果与较强的鲁棒性。     

基于图像隶属度的主分量分析人脸识别算法

提出了基于图像隶属度的主分量人脸识别算法.该算法首先用小波变换对人脸图像进行小波分解,形成低频小波子图,然后用主分量分析法构造特征脸子空间.计算训练样本和待测样本在人脸特征空间中的投影向量间的距离.引入图像隶属函数,作为识别分类器进行人脸识别.针对ORL人脸库的实验结果表明该方法具有良好的识别分离能力.     

基于分块小波变换和2DPCA的人脸特征提取与识别算法

从最优化的角度出发,提出了一种基于分块小波变换和二维主成分分析法(2DPCA)的人脸特征提取与识别算法。该方法首先对人脸图像进行分块小波变换,并对各分块的高、低频分量进行组合处理,然后对小波系数特征应用2DPCA方法进行变换并将分块特征进行融合得到人脸鉴别特征,最后在ORL人脸库上应用支持向量机(SVM)对该特征进行分类识别。试验结果表明,该算法能有效地提高人脸识别性能,具有较短的识别时间和较高的识别准确率,优于传统的人脸识别方法。     

基于Gabor小波和改进2DPCA的人脸识别方法

在人脸识别中,一般传统方法先用Gabor小波变换提取人脸特征后直接进行主成分分析(PCA)会遇到计算量过大,识别率不高等问题。为了克服这些影响,本文提出先对人脸进行2DGabor小波变换提取人脸特征,再用改进的2DPCA(二维主成分分析)进行降维处理,最后用最近邻法进行分类识别。在ORL人脸库上进行实验,该方法明显优于传统的2DGabor+PCA等算法。     

Gabor小波变换与图像分块的人脸识别算法研究

以二维Gabor小波变换提取人脸图像特征作为全局特征,对图像进行不等分块,人脸图像区域所在块加大权重,并提取每个子块的特征作为局部特征,对全局特征结合局部特征采用DCT进行降维处理,用支持向量机分类模型进行人脸识别。实验表明:与较同等分块的识别算法相比,该算法可提高人脸识别率。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.