基于改进CenterNet的图像多篡改检测模型

针对目前的图像篡改数据集中缺少同时包含多种篡改操作的单张图像的问题,构建了包含多种图像篡改手段的综合数据集(MTO Dataset),每张图片包含复制移动、拼接和移除中的2种或3种篡改操作。针对多篡改检测,提出了一种基于改进CenterNet的图像多篡改检测模型,将RGB图像和经过隐写分析得到的噪声特征图作为特征提取网络的输入,在特征提取网络ResNet-50的每一层卷积前加入门控通道注意力转换单元以促进特征通道间关系。为得到更具辨别性的特征,通过改进后的注意力机制自适应学习并调节特征权重,最后使用改进的损失函数优化边框预测的准确度。实验结果证明,与当前先进模型DETR、EfficientDet和VarifocalNet相比,该模型的F1分数提升0.4%～7.4%,检测速率提高1.32～3.06倍。     

基于改进的Mask R-CNN图像篡改取证方法

随着现代科学技术的进步,图像编辑工具的发展极大地降低了篡改所需成本。图像篡改手段有多种,现有的方法往往存在通用性差的问题。同时,这些方法只关注篡改定位而忽略对篡改手段的分类。本文提出一种基于改进的Mask R-CNN两阶段网络模型用于图像篡改取证。在特征提取部分,结合空域富模型(spatial rich model, SRM)和受约束卷积对输入图像进行预处理,再输入到ResNet101前4层中,以建立能够有效体现各种篡改痕迹的统一特征表示。一阶段网络通过注意力区域提议网络(attention region proposal network, A-RPN)检测篡改区域,预测模块实现篡改操作分类和粗略篡改区域定位。继而,一阶段网络得到的定位信息引导二阶段网络学习局部特征以定位出最终的篡改区域。本文所提出的模型能检测3种不同类型的图像篡改操作,包括复制-粘贴、拼接和移除。实验结果表明,本文所提出的方法在NIST16、COVERAGE、Columbia和CASIA数据集的F1值分别达到了0.924、0.761、0.791和0.473,优于传统方法和一些主流深度学习方法。     

基于级联卷积神经网络的图像篡改检测算法

基于卷积神经网络的图像篡改检测算法利用卷积神经网络的学习能力可以实现不依赖于单一图像属性的图像篡改检测,弥补传统图像篡改检测方法依赖单一图像属性、适用度不高的缺陷。利用深层多神经元的单一网络结构的图像篡改检测算法虽然可以学习更高级的语义信息,但检测定位篡改区域效果并不理想。该文提出一种基于级联卷积神经网络的图像篡改检测算法,在卷积神经网络所展示出来的普遍特性的基础上进一步探究其深层次的特性,利用浅层稀神经元的级联网络结构弥补以往深层多神经元的单一网络结构在图像篡改检测中的缺陷。该文提出的检测算法由级联卷积神经网络和自适应筛选后处理两部分组成,级联卷积神经网络实现分级式的篡改区域定位,自适应筛选后处理对级联卷积神经网络的检测结果进行优化。通过实验对比,该文算法展示了较好的检测效果,且具有较高的鲁棒性。     

基于深度学习的数字图像篡改定位方法综述

日益进步的图像处理技术让数字图像编辑的门槛变得越来越低。利用触手可及的图像处理软件,人们可以方便地改动图像内容,而篡改后的图像往往十分逼真,以至于肉眼难以辨认。这些篡改图像已对个人隐私、社会秩序、国家安全造成了严重的威胁。因此,检测及定位图像中的篡改区域具有重要现实意义,并已成为多媒体信息安全领域中的重要研究课题。近年来,深度学习技术在图像篡改定位中得到了广泛的应用,所取得的性能已显著超越了传统的篡改取证方法。本文对基于深度学习的图像篡改定位方法进行了梳理。介绍了图像篡改定位中常用的数据集及评价标准,以在篡改定位中应用的不同网络架构为依据分析了现有方法的技术特点和定位性能,并讨论了图像篡改定位面临的挑战和未来的研究方向。      

基于改进的RRU-Net的图像篡改检测算法

针对现有深度学习图像篡改检测模型难以利用网络浅层的篡改痕迹特征,导致检测效果差、定位精度低的问题,提出基于改进环形残差U-Net(Ringed Residual U-Net, RRU-Net)的图像篡改检测算法。首先利用分级监督策略设计篡改融合定位模块,将模型分层输出,使深、浅层特征信息充分融合,提高模型对浅层的纹理、边缘信息的敏感性。其次在二元交叉熵基础上对损失函数进行改进,用不同层的损失来衡量总损失。最后在模型中运用组归一化,加快模型收敛速度,同时避免过拟合。在CSAIA和Columbia数据集上的实验结果与RRU-Net相比,F1值分别提高了0.08和0.072,表明该方法具有较高的检测精度,且能有效定位篡改区域。     

基于多残差学习与注意力融合的中值滤波检测

针对小尺寸JPEG压缩图像携带有效信息较少、中值滤波痕迹不明显的问题,提出一种基于多残差学习与注意力融合的图像中值滤波检测算法。该算法将多个高通滤波器与注意力模块相结合,获取带权值的多残差特征图作为特征提取层的输入,特征提取层采用分组卷积形式,对输入的多残差特征图进行多尺度特征提取,融合不同尺度的特征信息,同时采用密集连接方式,每一层卷积的输入来自前面所有卷积层的输出和。实验结果表明,针对小尺寸JPEG压缩图像的中值滤波检测,本文算法比现有算法具有更高的检测精度,且能更有效地检测与定位局部篡改区域。     

融入残差注意力机制的DeepLabV3+图像拼接篡改取证网络

针对现有图像拼接检测网络模型存在边缘信息关注度不够、像素级精准定位效果不够好等问题,提出一种融入残差注意力机制的DeepLabV3+图像拼接篡改取证方法,该方法利用编-解码结构实现像素级图像的拼接篡改定位。在编码阶段,将高效注意力模块融入ResNet101的残差模块中,通过残差模块的堆叠以减小不重要的特征比重,凸显拼接篡改痕迹;其次,利用带有空洞卷积的空间金字塔池化模块进行多尺度特征提取,将得到的特征图进行拼接后通过空间和通道注意力机制进行语义信息建模。在解码阶段,通过融合多尺度的浅层和深层图像特征提升图像的拼接伪造区域的定位精度。实验结果表明,在CASIA 1.0、COLUMBIA和CARVALHO数据集上的拼接篡改定位精度分别达到了0.761、0.742和0.745,所提方法的图像拼接伪造区域定位性能优于一些现有的方法,同时该方法对JPEG压缩也具有更好的鲁棒性。     

面向小样本SAR图像识别的自注意力多尺度特征融合网络

合成孔径雷达（Synthetic Aperture Radar,SAR）图像标签难以大量获取,存在着大量小样本SAR数据集。SAR图像充满着散斑噪声,直接将卷积神经网络（Convolutional Neural Network,CNN）应用在小样本SAR数据集上难以提取有效特征。针对以上问题,本文提出了一种面向小样本SAR图像识别的自注意力多尺度特征融合网络。首先,将自注意力机制与幽灵模块相结合构建自注意力幽灵模块,并利用该模块替代经典的卷积操作提取SAR图像特征。其次,在网络中添加通道混洗单元以构建多尺度信息融合支路。最后,引入知识蒸馏对设计的网络进行压缩,进一步控制网络参数量。实验结果表明,本文方法在不同工作条件下采集的MSTAR数据集上具有出色的识别性能,在构建的小样本SAR数据集上也表现出良好的鲁棒性。      

基于RGB-T图像的双流残差扩张网络人群计数算法

在人群计数中,针对尺度变化、行人分布不均以及夜间较差成像条件,提出了一种基于RGBT(RGB-Thermal)图像的多模态人群计数算法,称为双流残差扩张网络,它由前端特征提取网络、多尺度的残差扩张卷积模块和全局注意力模块所构成。其中,前端网络用来提取RGB特征和热特征,扩张卷积模块进一步提取不同尺度的行人特征信息,全局注意力模块用来建立全局特征之间的依赖关系。此外,还引入了一种新的多尺度差异性损失,以提高网络的计数性能。为评估该方法,在RGBTCC(RGBT Crowd Counting)数据集和DroneRGBT数据集上进行了对比实验。实验结果表明,在RGBTCC数据集上与CMCRL(Cross-modal Collaborative Representation Learning)算法相比该算法的GAME(0)(Grid Average Mean absolute Errors)和RMSE(Root Mean Squared Error)分别降低了0.8和3.49,在DroneRGBT数据集上与MMCCN(Multi-Modal Crowd Counting Network)算法比...     

面向细粒度图像识别的通道注意力多分支网络

细粒度图像识别研究的内容是大类下的子类别识别问题,其关键是找到图像中的关键区域并从中提取有效特征.针对现有方法在定位关键区域时无法兼顾准确性和计算量的问题,提出了一种引入高效通道注意力模块的多分支网络.首先,在递归注意力卷积神经网络的基础上引入通道注意力定位图像中目标的位置.然后,用深度超参数化卷积替换传统卷积操作,增加了网络可学习的参数.最后,用改进的注意力部件模块切割出多个图像关键区域部件,以捕捉丰富的局部信息.实验结果表明,本方法在弱监督情况下的识别效果较好,在两个常用细粒度数据集Stanford Cars、Food-101上的识别准确率分别为95.4％和90.6％.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.