一种频率合成器的建模优化与电路设计

根据数模混合集成电路系统级和行为级快速验证的需求,设计了一种卫星导航系统射频接收机前端的频率合成器。传统行为级模型一般是基于理想环路进行参数提取,误差较大。为此,首先,分别利用MATLAB和Verilog-AMS对频率合成器建立理想行为级模型与非理想行为级模型,并根据行为级模型提取与优化的环路参数,采用SMIC 180 nm CMOS工艺设计仿真电路级频率合成器;其次,建立MATLAB噪声模型,对电路级各个模块的噪声进行拟合,评估频率合成器系统的整体噪声性能。所提出的频率合成器设计方法对电路级设计具有前瞻性的指导,并有助于电路级的设计优化。     

基于MATLAB的频率合成器模拟

频率合成器广泛应用于无线通信系统中,为无线通信收发机提供本征信号,其性能很大程度上决定无线通信收发机的性能。电路级的频率合成器仿真往往耗费很长时间,效率很低,基于MATLAB对频率合成器进行行为级仿真模拟,可以大大缩短仿真时间,提高设计效率。     

基于PLL+DDS接收机系统频率合成器的硬件实现

结合PLL和DDS的优点,设计出了基于PLL+DDS方案的接收机系统频率合成器的硬件电路.借助EDA软件ADS和ADISimPLL软件对关键模块进行设计仿真.最后利用Cadence软件完成硬件电路的设计,测试结果表明该频率合成器达到指标要求.     

基于ADF4350锁相频率合成器的频率源设计与实现

介绍了ADF4350锁相频率合成器的内部结构,在此基础上,分析和探讨了ADF4350锁相频率合成器的基本原理和工作特性.结合ADF4350的工作特性,给出了一种用AVR单片机控制ADF4350锁相频率合成器的频率源设计方法.对于环路滤波器,运用ADIsimPLL软件进行仿真和设计.通过对锁相环硬件电路的调试和编写相关单片机控制程序,实现了一个性能较好的频率源.     

基于ADS的锁相频率合成器的相位噪声性能仿真

快速有效的频率合成器的相位噪声性能仿真可以对频率合成器的设计实现提供有效的帮助.对此我们提出了一种仿真频率合成器整体相位噪声性能的新方法.首先对在Cadence下仿真得到的频率合成器中各模块相位噪声曲线进行拟合,然后在ADS下对应建立各模块的噪声模型,通过在ADS下仿真快速得到频率合成器整体的相位噪声性能.通过仿真验证了这种方法准确、快速.     

一种多倍频选择的高倍频锁相环频率合成器

文章描述了一个基准频率为32 768 Hz的锁相环频率合成器的设计.该频率合成器有1250、1 500、2 000、2 500、3 000等5个倍频选择.电路设计基于1st Silicon 2.5 V 0.25 μm CMOS工艺.Cadence Artist Analog仿真显示,该电路可以实现快速锁定,且具有较小的相位抖动.文章研究和总结了频率合成器系统参数的设计理论,对其各个子电路进行了结构优化,并且按MPW流片要求,进行了版图的布局设计.     

基于频率合成器PE3236的电路设计

频率合成器PE3236是Peregrine公司生产的单片频率合成器.本文简单介绍了PE3236的特点,并结合具体实际的工程应用说明了使用PE3236设计频率合成器的方法,实现了一种L波段的锁相环频率合成器.通过分析PE3236和频率合成器的特性,结合使用环路滤波器和压控振荡器等主要器件,完成了锁相环频率合成电路的设计.测试结果表明频率合成器环路工作稳定,并且可以根据需要改变频率,体现了锁相环频率合成器的输出信号频率稳定度高等特点.     

ADF4108在宽带X波段频率合成器中的应用

本文介绍了ADI公司生产的宽带集成锁相环芯片ADF4108的工作原理及特性,分析了该芯片是如何改善X波段频率合成器的相位噪声性能,给出了具体的X波段频率合成器的设计实例电路和仿真结果,为X波段宽带频率合成器的设计提供了很好的思路。     

锁相环频率合成器捕捉过程的分析与仿真

锁相环频率合成器在射频通信电路中有广泛的应用,频率合成器的捕捉时间是很重要的性能指标.介绍了锁相频率合成器的基本原理,重点分析了环路的传递函数及环路滤波器在其中的影响,对频率响应过程进行了仿真分析.     

一种电荷泵锁相环频率合成器的设计

基于SMIC的0.25μm工艺设计了一种输出频率范围为0.32～1.6GHz的电荷泵锁相环频率合成器电路.该电路采用了一种快速鉴频鉴相器和含有双交叉耦合结构的环形振荡器,同时根据电荷泵泵电流匹配的原则改进了电荷泵电路.HSIM仿真显示,锁相环频率合成器的锁定时间为1.3μz,功耗为28mW,锁定范围为5～20MHz,最大周对周抖动仅为50ps(0.8GHz).     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.