基于调频广播的外辐射源雷达抗干扰技术

基于调频广播照射源的外辐射源雷达具有抗隐身、反侦查和较强的生存能力等优点,渐渐得到了大家的重视。针对雷达系统中较强的直达波、多径信号以及同频等干扰信号对目标探测性能的严重影响,提出了空-时自适应处理技术来抑制干扰信号。重点分析了最大信干噪比(MSINR)准则的空域自适应处理和改进型递推最小二乘(RLS)算法的时域自适应处理,利用在实际工程系统中采集的数据对空时自适应处理算法进行仿真分析和验证,检测到干扰抑制前系统无法检测到的目标,目标的信杂比提高了10 d B以上。     

机载预警雷达KA-STAP杂波抑制方法研究

提出了一种机载预警雷达杂波抑制方法。该方法针对非均匀环境空时样本不足导致空时二维自适应信号处理（STAP）性能受限的问题,采用同一平台获取的相同频段、分布近似的历史数据,参与构建了空时二维自适应信号处理（STAP）的协方差矩阵,开展杂波抑制效果评估。基于实际数据的杂波抑制结果表明,可以有效提高杂波背景下目标信杂噪比,在强杂波区的杂波抑制得益明显,在弱杂波区杂波抑制性能不恶化。最后,针对该方法的工程应用提出了系统设计考虑,为机载预警雷达反杂波提供了新的思路。     

机载雷达三维空时自适应信号处理

空时二维自适应信号处理（STAP）技术已成为雷达领域的研究热点之一,是新一代高性能机载雷达的一项关键技术。然而目前的研究仅限于方位向-多普勒域的自适应处理,没有考虑俯仰向的信息,而在实际中杂波过程是与俯仰角有关的。因此,文中介绍了将2D-STAP扩展到3D-STAP的方法,即增加俯仰向的自适应处理,充分利用了俯仰向信息对杂波谱的影响。通过仿真试验证明,与二维自适应处理相比三维自适应处理具有更好的杂波抑制能力,并且可以明显地提高目标的检测性能。     

基于ANMF和非线性映射距离扩展目标检测

针对距离扩展目标的检测问题,提出一种自适应归一化匹配滤波（ANMF）、非线性映射和高阶互相关积累（HOCC）相结合的目标检测方法。首先将距离像按慢时间进行脉冲维划分,得到若干脉冲子区间,再对每个脉冲子区间进行自适应归一化匹配滤波,然后利用非线性函数对滤波的输出进行非线性映射处理,最后将非线性映射的输出进行高阶互相关积累,从而获得检测统计量。仿真实验结果表明,在检测概率为80％时,所述方法比传统 ANMF 方法所需的信杂比低1 dB 左右,性能较为优越。     

一种基于历史CPI数据的近程杂波抵制方法

文中对空时二维自适应处理（STAP）技术进行了基本原理性的论述,指出近程非均匀杂波由于样本不足导致STAP效果严重下降。针对机载相控阵雷达低重复频率数据中近程杂波难抑制的问题,根据机载平台在相邻相干积累时间（CPI）内运动距离短,雷达波束覆盖区域基本相同的特点,提出了一种利用前一CPI数据作为辅助知识抑制当前帧数据近程杂波的方法,算法根据历史CPI数据引入引起样本增加的特点,对近程非均匀杂波区进行精细分段处理,提升非均匀杂波抑制能力,改善非均匀杂波区的目标信杂噪比,文中对算法的原理进行了描述并通过实测数据实验验证了算法的性能。     

图象积累与自适应门限检测技术的研究

为了从低分辨率和低信杂比的图象序列中检测亚象元目标和点目标，本文定义了有效积累帧数，证明了在有效积累帧数内，积累ｍ帧序列图象，积累平均图象的信杂比提高到√ｍ倍，在图象积累的基础研究自适应门限检测技术，定义了最小错误率规则，并且导出了初始门限以及概率参数的计算公式，为了进一步降低虚警，还建立了后处理的方案，实验结果证实了理论分析的正确性。     

基于自适应背景预测的无源毫米波弱小目标检测

在分析毫米波辐射图像特性的基础上,对基于单帧的二维最小均方误差（Two-dimensional LMS）背景预测算法进行改进,充分利用连续帧图像中小目标的运动信息和背景的缓变特性,设计出基于连续帧的TDLMS滤波器。针对TDLMS算法对步长μ选取困难的问题,本文采用变步长TDLMS自适应算法。实验证明,该滤波算法能在两帧图像时达到最优的背景预测效果,有效滤除杂波,提高图像信杂比。     

空时误差情况下的STAP方法性能分析

空时自适应处理（Space-Time Adaptive Processing,STAP）技术可以实现对机载雷达杂波的有效抑制,显著提高机载雷达对运动目标的检测性能。但在实际工程应用过程中,STAP技术不可避免地会受到各种空时误差的影响,导致其性能严重下降。本文首先给出了各种空时误差的数学模型,然后从目标导向矢量失配和杂波自由度增加两方面系统分析了误差影响STAP性能的内在机理,并以信杂噪比（Signal to Clutter plus Noise Ratio,SCNR）损失为指标分析了不同误差对STAP性能的影响,最后通过仿真实验对相关分析进行了验证。本文工作量化了不同误差对STAP性能的影响程度,可为机载脉冲多普勒雷达空时误差补偿提供重要的理论支撑。      

地基相控阵雷达STAP应用研究

针对现代地基雷达传统方法抑制杂波不彻底的情况,根据空时二维信号处理技术（STAP）的特点和发展趋势,提出了将空时二维信号处理技术应用于地基二维相控阵雷达中的设想。根据地基雷达运动杂波的特点,在考虑误差情况下,对运动杂波二维耦合谱进行分析和仿真;初步构想了应用STAP的地基雷达无源干扰抑制结构,并对全空时自适应处理器抑制运动杂波进行仿真分析。结果表明,空时二维信号处理抑制运动杂波可以取得很好效果。     

一种多路并行盲搜索的空时二维抗干扰算法

针对卫星导航抗干扰中传统的空时自适应处理算法运算量大、处理速度较慢的问题,在介绍多级维纳滤波基本原理的基础上,提出了一种多路并行的盲搜索空时二维抗干扰自适应处理算法。该方法采用多级维纳滤波降维处理的方法求解信号子空间和干扰子空间,从而使输出信号的信干噪比达到最优,实现干扰的有效抑制。仿真结果表明,该算法具有较好的抗干扰性能,且运算量较低,有较好的工程应用前景。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.