遗传算法和多重网格在两步线性反演中的应用

基于扩展玻恩近似和电场积分方程,建立起非线性反演方程,然后应用两步线性反演方法进行迭代反演.在反演过程中,采用多重网格技术将待反演区域的离散网格从粗网格逐渐推演到细网格.在迭代前期,待反演区被离散为粗网格,利用实数编码的遗传算法对病态方程进行优化反演,并将其迭代反演结果作为迭代后期的初始值.在迭代后期,待反演区被离散成细网格,则采用共轭梯度(CG)法求解未知量较多的矩阵方程.二维轴对称非均匀介质剖面分布的反演结果表明,本文方法可反演高对比度的散射目标,具有较好的稳定性.     

基于阵列信息的二维轴对称电导率分布的有效反演方法

本文基于实际工程应用中的阵列感应测井仪(AIT)的测量信息,利用变分玻昂迭代法(VBIM),在非均匀背景介质中来重构和反演地层的电导率剖面.该方法基于非线性积分方程,利用变分方法来建立反演方程.在反演迭代过程中,非均匀背景介质中的格林函数无须更新,与变形玻昂迭代法(DBIM)相比其计算复杂性大大降低.文中仅利用沿井轴的AIT响应对地层电导率进行反演,其结果表明,反演结果与真实地层电导率分布吻合的较好.     

多重网格技术与波恩迭代法 相结合的反演新方法

本文将多重网格技术与波恩迭代法(BIM)相结合,利用时域散射数据对二维无耗非均匀介质剖面进行了反演.在反演迭代过程中,待反演目标区域的离散网格由粗逐渐变细.由于在反演的初期,目标区域离散网格较粗,离散反演积分方程所得到的矩阵方程的维数较小、条件数较低,使得该方法具有稳定性好、更容易收敛到真解的特点.通过反演实例表明,该方法极大地降低了反演过程的计算量,与传统的BIM方法相比能更精确地反演高对比度的散射目标.更为重要的是本文方法简单可行、可以与其它任何反演方法相结合.     

基于双感应测井仪低数据量的反演方法研究

将一种迭代方法和双共轭梯度法用于实际工程中常用的双感应测井仪（DIT）的反演和剖面成象。基于目标区内、外电场积分方程,建立DIT的反演积分方程,利用MoM将积分方程高散为矩阵方程。在每次反演迭代过程中,用数值模式匹配法（NMM）求解DIT的感应电动势和格林函数。文中利用沿井轴的DIT不完备的低信息量对地层剖面进行反演,数值模拟结果表明该迭代方法的实际工程应用的潜力。     

基于FDTD的二维电磁散射反演方法研究

文章针对有耗电磁介质的重建问题发展了一种新的算法.该方法在反演过程中采用常用的非线性最小二乘法来求解逆问题,通过Tikhonov正则化得到描述散射场与散射体电特性参数之间关系的迭代方程,然后将迭代方程离散化得到适于数值计算的形式,并最终实现了介质双参数的同时反演.在此基础上对有耗介质的反演进行了详细的研究,计算结果表明该方法不仅能实现介质的空间定位,在介质的电磁参数的反演上也能满足精度的要求.     

轴对称二维位场的变形玻恩迭代反演

本文将变形玻恩迭代方法用于处理轴对称二维非均匀介质分布的电导率反演问题众所周知，横磁场的反演比横电场的反演的非线性程度更高．本文选用了收敛速度快而效果好的变形波恩迭代反演方法．而离散非线性积分方程所得矩阵方程的病态特性用古洪诺夫正则化方法来克服，再用共轭梯度方法求解在每次选代过程中采用了快速的半解析半数值的高效正演方法，本文用它半解析地表达出反演中所需计算的格林函数的偏导数；并在此基础上半解析地求出了反演的非线性积分方程中的积分运算，从而大大提高了反演速度和精度     

用迭代方法和双共轭梯度法重建二维电导率剖面分布

本文着重阐述采用积分方程的迭代方法并结合双共轭梯度（ＢＣＧ）法对低频近声非均匀背景介质中二维轴对称电导率剖面的反演,并仅用ｚ向采集的数据进行目标重建。首先,基于等反演目标区内、外的电场积分方程。建立超反演积分方程,将积分方程离散化为矩阵方程用迭代方法求解目标区电导率分布。在每次迭代过程中,格林函数不断被更新。同时用正则人垭消除解的不适定性。文中利用不完备的测量数据对复杂的电导率同进行了反演。模拟结     

利用星载SMMR低频数据对塔克拉玛干沙漠地表要素的反演研究

以辐射传输方程为正演模型,用带边界条件的Levenberg-Marquardt方法进行了塔克拉玛干沙漠地区地表要素的反演研究,这些地表要素包括地表温度,下垫面介电常数(含水量)、粗糙度和大气水汽含量等.利用沙漠腹地塔中站和沙漠周边20个气象站的气象和气候资料对反演结果进行了验证,反演的温度精度在2K以内,地面介电常数平均值为2.73.反演研究对获得塔克拉玛干沙漠地区地表面要素的时空分布提供了一种途径.     

高频地波雷达浪高参数提取的一种新算法

从Howell深水无表面流情况下的二阶窄波束雷达截面方程出发,提出了一种变换积分对象、不等分积分区间构成稀疏矩阵方程来反演无向浪高谱的新算法.在不同信噪比和不同海况条件下进行数值仿真,当信噪比高于35dB时,该算法有较高的反演精度.并将该方法应用于"高频地波雷达现场对比验证试验",反演结果与观测船输出结果比较,有效浪高的平均绝对误差为0.32m,并与Barrick法和Howell法进行了比较.模拟结果和实测结果都表明该反演算法的正确性和可行性.     

基于阵列信息的二维轴对称电导率分布的有效反演方法

本文基于实际工程应用中的阵列感应测井仪（ＡＩＴ）的测量信息,利用变分坡昂迭代法（ＶＢＭ）,在非均匀背景介质中来重构和反演地层的电导率剖面。该方法基于非线性积分方程利用变分方法来建立反演方程,在反演迭代过程中,非均匀剪影介质中的格林函数无须更新,与变形玻昂迭代法（ＤＢＩＭ）相比其计算复杂性大大降低,文中仅利用沿井轴的ＡＩＴ响应对地层电导率进行反演,其胍演结果与起初地层电导率分布吻合的较好。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.