新型毫米波宽带圆极化微带天线阵列设计*

提出了一种基于H形缝隙耦合的毫米波方形切角圆极化微带天线单元,对影响其轴比特性的各参数进行了分析,并采用这种新型天线单元设计了4×4毫米波宽带圆极化微带天线阵列.仿真结果表明,该天线阵列阻抗带宽(S11＜-10dB)和轴比带宽(AR＜3dB)分别达到了25.9％(32.2 ～41.8GHz)和20.1％(32.6～ 39.9GHz),与传统圆极化微带天线阵列相比,分别提高9.7％和14.7％,天线阵列最大增益为19dB,在整个轴比带宽内,增益均大于15 dB,副瓣电平及交叉极化电平均较低.     

Ka频段宽带圆极化微带天线

面向Ka频段高通量卫星对天线的需求,设计了一种Ka频段宽带圆极化微带天线. 天线单元主要由圆形辐射贴片和缝隙耦合馈电结构组成,通过两个类T形缝隙结合实现宽带圆极化. 天线仅有三层金属层,结构简单. 仿真结果显示,天线单元的相对阻抗带宽为31.5%（25.1～34.5 GHz）,相对3 dB轴比带宽为20.3%（26.5～32.5 GHz）. 由于单元尺寸较小,不便于对其性能进行验证,因此利用该天线单元组成2×2天线阵列,并进行加工测试. 仿真与试验结果表明,天线阵列阻抗带宽以及3 dB轴比带宽可以覆盖25.6～33.1 GHz频率范围,实测结果与仿真结果一致性良好.     

一种极化可重构的开口环缝微带天线

基于互补开口谐振环的结构设计了一种新型的极化可重构天线。与传统的180°对称开口谐振环不同的是采用90°夹角的开口结构,通过控制开口的状态,能够实现2. 6GHz 频率的左右圆极化和2.4GHz 线极化的转换。当天线左右开关状态不同的时候,天线的结构非对称,可将天线看做变形的开口谐振环,其能够实现圆极化;当天线左右开关都处于开的状态时,天线可以看做是双环缝微带天线,实现线极化。2.6GHz 的左右圆极化的3dB 轴比带宽为100MHz,-10dB 阻抗带宽2.20～2.80GHz(600MHz),2.4GHz 线极化的阻抗带宽是2.1～2.55GHz(450MHz),适用于无线移动通信。     

一种新型单层宽带微带反射阵天线设计

针对微带反射阵天线带宽窄的问题,提出了一种新型线极化双谐振宽带"蝴蝶"形单元结构,详细描述了单元结构设计步骤,研究了不同基板以及不同结构参数对单元相位曲线的相移范围、平滑度以及谐振点位置的影响。仿真测试表明,该单元结构能够在5.5-7GHz带宽内具有良好的相位特性曲线。对36个"蝴蝶"形单元组件测试表明,其在20%带宽内辐射效率达到40%以上,最大辐射方向上交叉极化电平小于-30dB。此外,"蝴蝶"形单元结构类似于"十"字形单元结构,有利于进一步扩展实现多频带、多波束反射阵天线设计。     

一种非谐振宽带高增益部分反射面天线

介绍一种非谐振的宽带高增益部分反射面天线。该天线由一个线-圆极化转换超表面、一个宽带耦合馈电天线和金属地组成。部分反射面和金属地板构成的腔体处于非谐振状态,通过旋转部分反射面上层的圆极化贴片对泄露的电磁波进行相位校正,可实现高增益和宽带圆极化的性能。仿真结果表明,天线3 dB轴比带宽和3 dB增益带宽分别为10.37～13.52 GHz(26.37%),11.21～12.99 GHz(14.71%),同时,天线在12.4 GHz实现20.23 dBic的峰值增益,口径效率为34.11%。     

宽带圆极化犄角形缝隙天线设计

文章设计了一款宽带圆极化缝隙天线。该天线采用微带线激励犄角形缝隙,实现了宽带辐射特性。研究结果表明,该天线具有良好的阻抗匹配带宽和圆极化辐射性能,其阻抗带宽(S11<–10 d B)为24.8%(2.2~2.82 GHz),3-d B轴比带宽为29.2%(2.13~2.86 GHz)。     

S波段宽带圆极化反射面天线口径合成阵列设计

为了实现固态源的宽频带空间功率合成,提出采用背射式的S波段宽带圆极化螺旋天线作为口径合成的反射面单元的馈源,避免馈线和副反射面对口面的遮挡.在同轴末端设计了折叠式扼流槽,抑制沿馈线的表面电流对馈源方向图的扰动,通过对锥形螺旋的几何参数进行优化,获得了38％的百分比带宽.对反射面单元和7元口径阵进行了仿真设计,仿真结果表明:口径阵工作带宽为2.3～3.4 GHz,带宽范围内增益大于31.5dB,轴比低于3 dB.     

一种新颖开槽切角圆极化微带天线单元的设计

为了简化方形切角圆极化微带天线单元的设计流程,提出了一种新颖的开槽切角圆极化微带天线单元形式。利用在微带天线单元上开矩形槽的方法,避免了调试切角圆极化单元的谐振频点和轴比时的反复迭代过程,缩短了调试时间。分析了矩形槽的不同宽度和深度对阻抗和轴比的影响,并通过仿真设计出一款性能良好的微带天线单元。单层微带天线单元仿真的最终阻抗相对带宽(S11 <-10 dB)为2. 05% (1. 980 ~ 2. 021 GHz);仿真的最终轴比相对带宽(AR<3 dB)为0. 50%(1. 995 ~2. 005 GHz)。加工了天线单元实物并进行测试,实测的阻抗相对带宽(S11 <-10 dB)为2. 05%(1. 975 ~2. 016 GHz);实测的轴比相对带宽(AR<3 dB)为0. 50% (1. 990 ~ 2. 000 GHz)。实测结果与仿真结果具有良好的一致性,验证了设计的正确性。     

倒L形枝节加载宽带圆极化缝隙天线

设计了一种倒L形枝节加载宽带圆极化缝隙天线。天线为单层矩形结构,采用共面波导(CPW)馈电,通过在馈线上端加载倒L形枝节和在环形接地面上加载T 形枝节,实现了天线的宽阻抗带宽和宽轴比带宽特性。实测结果表明,S11 ￡-10 dB 的阻抗带宽达到115%(1.6-5.9 GHz),轴比￡3 dB 的圆极化带宽为48.3% (2.2-3.6 GHz)。该天线结构简单、易于制作,具有较好的应用前景。     

基于超表面的低剖面宽带圆极化天线

基于超表面设计了一款低剖面、宽带、圆极化天线。天线由改进的Wilkinson功分器馈电实现宽带90°相位差,超表面单元在传统方环形单元上加载箭头结构来增加额外的等效电容,进一步改善了天线带宽和增益性能。仿真和测试结果表明,天线的阻抗带宽为36.7%(2.0 GHz-2.9 GHz),3dB轴比带宽为26.1%(2.0 GHz-2.6 GHz),保持稳定右旋圆极化辐射,峰值增益8dBic,整体天线厚度仅0.05 A。(6mm)。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.